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FET, MOSFET Arrays

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Configuration FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Power - Max Operating Temperature Grade Qualification Mounting Type Supplier Device Package
G180C06Y

G180C06Y

MOSFET N/P-CH 60V 50A TO252-4

Goford Semiconductor

9,358 0.00
RFQ
G180C06Y

Datasheet

- TO-252-5, DPAK (4 Leads + Tab), TO-252AD Active MOSFET (Metal Oxide) N and P-Channel, Common Drain - 60V 50A (Tc), 60A (Tc) 17mOhm @ 20A, 10V, 23mOhm @ 10A, 10V 2V @ 250µA, 4V @ 250µA 39nC @ 4.5V, 62nC @ 4.5V 2429pF @ 30V, 4471pF @ 30V 69W (Tc), 115W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252-4
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