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- 2026.05.20 Renesas to Raise Prices in July Amid Rising Supply Chain Costs Renesas to Raise Prices in July, New Pricing Structure Starts July 1According to channel market sources, Renesas Electronics plans to increase prices on some products starting July 1, alongside the int…
- 2026.04.29 Optocoupler (Optical Isolator) Current Transfer Ratio and Isolation Voltage Characteristics Technical Background of Optocoupler CTR and Isolation VoltageOptocouplers (also known as optical isolators) are hybrid semiconductor devices that achieve electrical isolation and signal transmission th…
- 2026.04.06 Low Dropout (LDO) Linear Regulator Dropout Voltage and Power Supply Technical Background of LDO Dropout Voltage and PSRR CharacteristicsLow Dropout (LDO) linear regulators are core power management integrated circuits (ICs) that provide stable, low-noise, and ripple-fr…
- 2026.03.30 Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) Technical Background of GaN HEMT On-Resistance and Switching PerformanceGallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) are leading-edge wide bandgap (WBG) power semiconductor devices,…
- 2026.03.19 Test Methods for Rds(on) and Switching Performance Technical Background of Power MOSFET Rds(on) and Switching PerformancePower Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are core semiconductor switching devices for power conversion sy…
- 2026.03.06 Insulated Gate Bipolar Transistor (IGBT) Saturation Voltage Drop and Switching Loss Characteristics Technical Background of IGBT Saturation Voltage Drop and Switching LossInsulated Gate Bipolar Transistors (IGBTs) are core power semiconductor devices that combine the high input impedance of MOSFETs a…
- 2026.03.02 Power MOSFET On-Resistance (Rds(on)) and Switching Performance Characteristics Technical Background of Power MOSFET Rds(on) and Switching PerformancePower Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are core semiconductor switching devices for power conversion sy…
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