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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

FET, MOSFET Arrays

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
NVMFD040N10MCLT1G MOSFET 2N-CH 100V 6.1A 8DFN onsemi	6,000	RFQ	-	-	8-PowerTDFN	Tape & Reel (TR)	Active	MOSFET (Metal Oxide)	2 N-Channel	-	100V	6.1A (Ta), 21A (Tc)	39mOhm @ 5A, 10V	3V @ 26µA	8.4nC @ 10V	520pF @ 50V	3.2W (Ta), 36W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	8-DFN (5x6) Dual Flag (SO8FL-Dual)
NXH020U90MNF2PTG MOSFET 2N-CH 900V 149A onsemi	4	RFQ	Datasheet	-	Module	Tray	Active	Silicon Carbide (SiC)	2 N-Channel (Dual)	-	900V	149A (Tc)	14mOhm @ 100A, 15V	4.3V @ 40mA	546.4nC @ 15V	7007pF @ 450V	352W (Tj)	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	-
NVXK2VR40WXT2 MOSFET 6N-CH 1200V 55A APM32 onsemi	14	RFQ	Datasheet	-	32-PowerDIP Module (1.449", 36.80mm)	Tube	Active	Silicon Carbide (SiC)	6 N-Channel (3-Phase Bridge)	Silicon Carbide (SiC)	1200V (1.2kV)	55A (Tc)	59mOhm @ 35A, 20V	4.3V @ 10mA	106nC @ 20V	1789pF @ 800V	319W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	APM32
NVVR26A120M1WSB MOSFET 2N-CH 1200V AHPM15-CDE onsemi	10	RFQ	Datasheet	-	15-PowerDIP Module (2.441", 62.00mm)	Tube	Active	Silicon Carbide (SiC)	2 N-Channel (Half Bridge)	Silicon Carbide (SiC)	1200V (1.2kV)	400A (Tj)	2.6mOhm @ 400A, 20V	3.2V @ 150mA	1.75µC @ 20V	31700pF @ 800V	1kW (Tj)	-40°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	AHPM15-CDE
NVVR26A120M1WSS MOSFET 2N-CH 1200V AHPM15-CDI onsemi	9	RFQ	Datasheet	-	15-PowerDIP Module (2.441", 62.00mm)	Tube	Active	Silicon Carbide (SiC)	2 N-Channel (Half Bridge)	-	1200V (1.2kV)	400A (Tj)	2.6mOhm @ 400A, 20V	3.2V @ 150mA	1.75µC @ 20V	31700pF @ 800V	1kW (Tj)	-40°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	AHPM15-CDI
FAM65CR51DZ1 MOSFET 2N-CH 650V 33A APMCD-B16 onsemi	67	RFQ	Datasheet	-	12-SSIP Exposed Pad, Formed Leads	Tube	Active	MOSFET (Metal Oxide)	2 N-Channel	-	650V	33A (Tc)	51mOhm @ 20A, 10V	5V @ 3.3mA	123nC @ 10V	4864pF @ 400V	160W (Tc)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Through Hole	APMCD-B16
NXH015P120M3F1PTG MOSFET 2N-CH 1200V 77A onsemi	13	RFQ	Datasheet	-	Module	Tray	Active	Silicon Carbide (SiC)	2 N-Channel (Half Bridge)	Silicon Carbide (SiC)	1200V (1.2kV)	77A (Tc)	20mOhm @ 60A, 18V	4.4V @ 30mA	211nC @ 18V	4696pF @ 800V	198W (Tj)	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	-
NXH008P120M3F1PG MOSFET 2N-CH 1200V 145A onsemi	18	RFQ	Datasheet	-	Module	Tray	Active	Silicon Carbide (SiC)	2 N-Channel (Half Bridge)	Silicon Carbide (SiC)	1200V (1.2kV)	145A (Tc)	10.9mOhm @ 120A, 18V	4.4V @ 60mA	419nC @ 18V	8334pF @ 800V	382W (Tj)	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	-
NXH011F120M3F2PTHG MOSFET 4N-CH 1200V 105A 34PIM onsemi	13	RFQ	Datasheet	-	Module	Tray	Active	Silicon Carbide (SiC)	4 N-Channel (Full Bridge)	Silicon Carbide (SiC)	1200V (1.2kV)	105A (Tc)	16mOhm @ 100A, 18V	4.4V @ 60mA	284nC @ 18V	6211.6pF @ 800V	244W (Tj)	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	34-PIM (56.7x42.5)
NXH007F120M3F2PTHG MOSFET 4N-CH 1200V 149A 34PIM onsemi	6	RFQ	Datasheet	-	Module	Tray	Active	Silicon Carbide (SiC)	4 N-Channel (Full Bridge)	Silicon Carbide (SiC)	1200V (1.2kV)	149A (Tc)	10mOhm @ 120A, 18V	4.4V @ 60mA	407nC @ 18V	9090pF @ 800V	353W (Tj)	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	34-PIM (56.7x42.5)

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