FETs, MOSFETs
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IXFB80N50Q2MOSFET N-CH 500V 80A PLUS264 |
5,418 | 0.00 |
|
Datasheet |
HiPerFET™, Q2 Class | TO-264-3, TO-264AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 80A (Tc) | 10V | 60mOhm @ 500mA, 10V | 5.5V @ 8mA | 250 nC @ 10 V | ±30V | 15000 pF @ 25 V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PLUS264™ |
|
NTP8G206NGGANFET N-CH 600V 17A TO220-3 |
4,629 | 0.00 |
|
Datasheet |
- | TO-220-3 | Tube | Obsolete | N-Channel | GaNFET (Gallium Nitride) | 600 V | 17A (Tc) | 8V | 180mOhm @ 11A, 8V | 2.6V @ 500µA | 9.3 nC @ 4.5 V | ±18V | 760 pF @ 480 V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
|
FB180SA10MOSFET N-CH 100V 180A SOT-227 |
4,891 | 0.00 |
|
- |
HEXFET® | SOT-227-4, miniBLOC | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 180A (Tc) | 10V | 6.5mOhm @ 108A, 10V | 4V @ 250µA | 380 nC @ 10 V | ±20V | 10700 pF @ 25 V | - | 480W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227 |
|
IXKF40N60SCD1MOSFET N-CH 600V 41A I4PAC |
8,569 | 0.00 |
|
Datasheet |
CoolMOS™ | i4-Pac™-5 (3 Leads) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 41A (Tc) | 10V | 70mOhm @ 25A, 10V | 3.9V @ 3mA | 250 nC @ 10 V | ±20V | - | - | - | -40°C ~ 150°C (TJ) | - | - | Through Hole | ISOPLUS i4-PAC™ |
|
IXFK180N10MOSFET N-CH 100V 180A TO264AA |
2,175 | 0.00 |
|
Datasheet |
HiPerFET™ | TO-264-3, TO-264AA | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 100 V | 180A (Tc) | 10V | 8mOhm @ 90A, 10V | 4V @ 8mA | 390 nC @ 10 V | ±20V | 10900 pF @ 25 V | - | 560W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264AA (IXFK) |
|
IXFK140N60X3DISCRETE MOSFET 140A 600V X3 TO2 |
7,165 | 0.00 |
|
- |
- | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IXTX24N100MOSFET N-CH 1000V 24A PLUS247 |
3,304 | 0.00 |
|
- |
- | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 24A (Tc) | 10V | 400mOhm @ 12A, 10V | 5.5V @ 8mA | 267 nC @ 10 V | ±20V | 8700 pF @ 25 V | - | 568W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PLUS247™-3 |
|
|
APT84M50B2MOSFET N-CH 500V 84A T-MAX |
9,024 | 0.00 |
|
Datasheet |
- | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 84A (Tc) | 10V | 65mOhm @ 42A, 10V | 5V @ 2.5mA | 340 nC @ 10 V | ±30V | 13500 pF @ 25 V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | T-MAX™ [B2] |
|
APT6021BFLLGMOSFET N-CH 600V 29A TO247 |
9,207 | 0.00 |
|
Datasheet |
POWER MOS 7® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 29A (Tc) | - | 210mOhm @ 14.5A, 10V | 5V @ 1mA | 80 nC @ 10 V | - | 3470 pF @ 25 V | - | - | - | - | - | Through Hole | TO-247 [B] |
|
VS-FA40SA50LCMOSFET N-CH 500V 40A SOT-227 |
8,962 | 0.00 |
|
Datasheet |
- | SOT-227-4, miniBLOC | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 40A (Tc) | 10V | 130mOhm @ 23A, 10V | 4V @ 250µA | 420 nC @ 10 V | ±20V | 6900 pF @ 25 V | - | 543W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227 |
|
IXFR44N60MOSFET N-CH 600V 38A ISOPLUS247 |
7,193 | 0.00 |
|
- |
HiPerFET™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 38A (Tc) | 10V | 130mOhm @ 22A, 10V | 4.5V @ 4mA | 330 nC @ 10 V | ±20V | 8900 pF @ 25 V | - | 400W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ISOPLUS247™ |
|
IXFN150N15MOSFET N-CH 150V 150A SOT227B |
7,079 | 0.00 |
|
- |
HiPerFET™ | SOT-227-4, miniBLOC | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 150A (Tc) | 10V | 12.5mOhm @ 75A, 10V | 4V @ 8mA | 360 nC @ 10 V | ±20V | 9100 pF @ 25 V | - | 600W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
|
IXFH80N085MOSFET N-CH 85V 80A TO247AD |
3,818 | 0.00 |
|
- |
HiPerFET™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 85 V | 80A (Tc) | 10V | 9mOhm @ 40A, 10V | 4V @ 4mA | 180 nC @ 10 V | ±20V | 4800 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AD (IXFH) |
|
APT1201R6BVFRGMOSFET N-CH 1200V 8A TO247 |
3,853 | 0.00 |
|
Datasheet |
POWER MOS V® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 8A (Tc) | - | 1.6Ohm @ 4A, 10V | 4V @ 1mA | 230 nC @ 10 V | - | 3660 pF @ 25 V | - | - | - | - | - | Through Hole | TO-247 [B] |
|
IXFR30N110PMOSFET N-CH 1100V 16A ISOPLUS247 |
5,809 | 0.00 |
|
- |
HiPerFET™, Polar | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1100 V | 16A (Tc) | 10V | 400mOhm @ 15A, 10V | 6.5V @ 1mA | 235 nC @ 10 V | ±30V | 13600 pF @ 25 V | - | 320W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ISOPLUS247™ |
|
|
APT24M120LMOSFET N-CH 1200V 24A TO264 |
7,488 | 0.00 |
|
Datasheet |
POWER MOS 8™ | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 24A (Tc) | 10V | 680mOhm @ 12A, 10V | 5V @ 2.5mA | 260 nC @ 10 V | ±30V | 8370 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 [L] |
|
APT10086BVRGMOSFET N-CH 1000V 13A TO247 |
2,011 | 0.00 |
|
Datasheet |
POWER MOS V® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 13A (Tc) | - | 860mOhm @ 500mA, 10V | 4V @ 1mA | 275 nC @ 10 V | - | 4440 pF @ 25 V | - | - | - | - | - | Through Hole | TO-247 [B] |
|
IXFN73N30QMOSFET N-CH 300V 73A SOT-227B |
9,595 | 0.00 |
|
- |
HiPerFET™, Q Class | SOT-227-4, miniBLOC | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 300 V | 73A (Tc) | 10V | 45mOhm @ 500mA, 10V | 4V @ 4mA | 195 nC @ 10 V | ±30V | 5400 pF @ 25 V | - | 481W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
|
NTCR013N120M3SWAFER DIE |
7,942 | 0.00 |
|
Datasheet |
- | Die | Tray | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | - | 18V | 20mOhm @ 75A, 18V | 4.4V @ 37mA | 254 nC @ 18 V | - | 5813 pF @ 800 V | - | - | - | - | - | Surface Mount | Die |
|
NTCTR028N170M1SIC MOS TNR 28MOHM 1700V M1 WAFE |
8,924 | 0.00 |
|
- |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
