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Home > Products  > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

FETs, MOSFETs

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
APT19F100J

APT19F100J

MOSFET N-CH 1000V 20A ISOTOP

Microchip Technology

 3 0.00
RFQ
APT19F100J

Datasheet

 		POWER MOS 8™ SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 1000 V 20A (Tc) 10V 440mOhm @ 16A, 10V 5V @ 2.5mA 260 nC @ 10 V ±30V 8500 pF @ 25 V - 460W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount ISOTOP®
IV1Q12050T3

IV1Q12050T3

SIC MOSFET, 1200V 50MOHM, TO-247

Inventchip

 6,664 0.00
RFQ
IV1Q12050T3

Datasheet

 		- TO-247-3 Active N-Channel SiCFET (Silicon Carbide) 1200 V 58A (Tc) 20V 65mOhm @ 20A, 20V 3.2V @ 6mA 120 nC @ 20 V +20V, -5V 2770 pF @ 800 V - 327W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-3
UJ4SC075010L8SSB

UJ4SC075010L8SSB

750V/10MO,SICFET,G4,TOLL

Qorvo

 9,945 0.00
RFQ
UJ4SC075010L8SSB

Datasheet

 		- 8-PowerSFN Bulk Active N-Channel, Depletion Mode SiCFET (Silicon Carbide) 750 V 106A (Tc) 12V 14.2mOhm @ 60A, 12V 5.5V @ 10mA 75 nC @ 15 V ±20V 3245 pF @ 400 V - 556W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TOLL
APT6010B2FLLG

APT6010B2FLLG

MOSFET N-CH 600V 54A T-MAX

Microchip Technology

 3,735 0.00
RFQ
APT6010B2FLLG

Datasheet

 		POWER MOS 7® TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 600 V 54A (Tc) - 100mOhm @ 27A, 10V 5V @ 2.5mA 150 nC @ 10 V - 6710 pF @ 25 V - - - - - Through Hole T-MAX™ [B2]
APT80SM120S

APT80SM120S

SICFET N-CH 1200V 80A D3PAK

Microsemi Corporation

 2,840 0.00
RFQ
APT80SM120S

Datasheet

 		- TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Bulk Obsolete N-Channel SiCFET (Silicon Carbide) 1200 V 80A (Tc) 20V 55mOhm @ 40A, 20V 2.5V @ 1mA 235 nC @ 20 V +25V, -10V - - 625W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D3PAK
IXFN60N60

IXFN60N60

MOSFET N-CH 600V 60A SOT-227B

IXYS

 8,995 0.00
RFQ
IXFN60N60

Datasheet

 		HiPerFET™ SOT-227-4, miniBLOC Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 60A (Tc) 10V 75mOhm @ 500mA, 10V 4.5V @ 8mA 380 nC @ 10 V ±20V 15000 pF @ 25 V - 700W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227B
APT8020LLLG

APT8020LLLG

MOSFET N-CH 800V 38A TO264

Microchip Technology

 2,455 0.00
RFQ
APT8020LLLG

Datasheet

 		POWER MOS 7® TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 800 V 38A (Tc) - 200mOhm @ 19A, 10V 5V @ 2.5mA 195 nC @ 10 V - 5200 pF @ 25 V - - - - - Through Hole TO-264 [L]
IXTT1N250HV-TRL

IXTT1N250HV-TRL

MOSFET N-CH 2500V 1.5A TO268HV

Littelfuse Inc.

 7,289 0.00
RFQ
IXTT1N250HV-TRL

Datasheet

 		- TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 2500 V 1.5A (Tc) 10V 40Ohm @ 750mA, 10V 4V @ 250µA 41 nC @ 10 V ±20V 1660 pF @ 25 V - 250W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-268HV (IXTT)
IV1Q12050T4

IV1Q12050T4

SIC MOSFET, 1200V 50MOHM, TO-247

Inventchip

 3,082 0.00
RFQ
IV1Q12050T4

Datasheet

 		- TO-247-4 Active N-Channel SiCFET (Silicon Carbide) 1200 V 58A (Tc) 20V 65mOhm @ 20A, 20V 3.2V @ 6mA 120 nC @ 20 V +20V, -5V 2750 pF @ 800 V - 344W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
APT10045B2LLG

APT10045B2LLG

MOSFET N-CH 1000V 23A T-MAX

Microchip Technology

 7,545 0.00
RFQ
APT10045B2LLG

Datasheet

 		POWER MOS 7® TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 1000 V 23A (Tc) 10V 450mOhm @ 11.5A, 10V 5V @ 2.5mA 154 nC @ 10 V ±30V 4350 pF @ 25 V - 565W (Tc) -55°C ~ 150°C (TJ) - - Through Hole T-MAX™ [B2]
APT10035LLLG

APT10035LLLG

MOSFET N-CH 1000V 28A TO264

Microchip Technology

 2,480 0.00
RFQ
APT10035LLLG

Datasheet

 		POWER MOS 7® TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 1000 V 28A (Tc) 10V 350mOhm @ 14A, 10V 5V @ 2.5mA 186 nC @ 10 V ±30V 5185 pF @ 25 V - 690W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-264 [L]
C2M0080170P

C2M0080170P

SICFET N-CH 1700V 40A TO247-4

Wolfspeed, Inc.

 3,763 0.00
RFQ

-

 C2M™ TO-247-4 Tube Obsolete N-Channel SiCFET (Silicon Carbide) 1700 V 40A (Tc) 20V 125mOhm @ 28A, 20V 4V @ 10mA 120 nC @ 20 V +25V, -10V 2250 pF @ 1000 V - 277W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-4L
APT58M50J

APT58M50J

MOSFET N-CH 500V 58A ISOTOP

Microchip Technology

 9,375 0.00
RFQ
APT58M50J

Datasheet

 		POWER MOS 8™ SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 500 V 58A (Tc) 10V 65mOhm @ 42A, 10V 5V @ 2.5mA 340 nC @ 10 V ±30V 13500 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount ISOTOP®
APT20M22JVR

APT20M22JVR

MOSFET N-CH 200V 97A ISOTOP

Microchip Technology

 9,590 0.00
RFQ
APT20M22JVR

Datasheet

 		POWER MOS V® SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 200 V 97A (Tc) - 22mOhm @ 500mA, 10V 4V @ 2.5mA 435 nC @ 10 V - 10200 pF @ 25 V - - - - - Chassis Mount ISOTOP®
APT10035LFLLG

APT10035LFLLG

MOSFET N-CH 1000V 28A TO264

Microchip Technology

 9,822 0.00
RFQ
APT10035LFLLG

Datasheet

 		POWER MOS 7® TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 1000 V 28A (Tc) - 370mOhm @ 14A, 10V 5V @ 2.5mA 186 nC @ 10 V - 5185 pF @ 25 V - - - - - Through Hole TO-264 [L]
APT10M11JVRU2

APT10M11JVRU2

MOSFET N-CH 100V 142A SOT227

Microchip Technology

 2,342 0.00
RFQ
APT10M11JVRU2

Datasheet

 		- SOT-227-4, miniBLOC Bulk Active N-Channel MOSFET (Metal Oxide) 100 V 142A (Tc) 10V 11mOhm @ 71A, 10V 4V @ 2.5mA 300 nC @ 10 V ±30V 8600 pF @ 25 V - 450W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227
APT10M11JVRU3

APT10M11JVRU3

MOSFET N-CH 100V 142A SOT227

Microchip Technology

 4,243 0.00
RFQ
APT10M11JVRU3

Datasheet

 		- SOT-227-4, miniBLOC Bulk Active N-Channel MOSFET (Metal Oxide) 100 V 142A (Tc) 10V 11mOhm @ 71A, 10V 4V @ 2.5mA 300 nC @ 10 V ±30V 8600 pF @ 25 V - 450W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227
APT10035B2FLLG

APT10035B2FLLG

MOSFET N-CH 1000V 28A T-MAX

Microchip Technology

 4,190 0.00
RFQ
APT10035B2FLLG

Datasheet

 		POWER MOS 7® TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 1000 V 28A (Tc) 10V 370mOhm @ 14A, 10V 5V @ 2.5mA 186 nC @ 10 V ±30V 5185 pF @ 25 V - 690W (Tc) -55°C ~ 150°C (TJ) - - Through Hole T-MAX™ [B2]
APT20M22JVRU2

APT20M22JVRU2

MOSFET N-CH 200V 97A SOT227

Microchip Technology

 6,223 0.00
RFQ
APT20M22JVRU2

Datasheet

 		- SOT-227-4, miniBLOC Bulk Active N-Channel MOSFET (Metal Oxide) 200 V 97A (Tc) 10V 22mOhm @ 48.5A, 10V 4V @ 2.5mA 290 nC @ 10 V ±30V 8500 pF @ 25 V - 450W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227
APT20M22JVRU3

APT20M22JVRU3

MOSFET N-CH 200V 97A SOT227

Microchip Technology

 8,545 0.00
RFQ
APT20M22JVRU3

Datasheet

 		- SOT-227-4, miniBLOC Bulk Active N-Channel MOSFET (Metal Oxide) 200 V 97A (Tc) 10V 22mOhm @ 48.5A, 10V 4V @ 2.5mA 290 nC @ 10 V ±30V 8500 pF @ 25 V - 450W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227
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