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FETs, MOSFETs
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NTND1K5N021ZTAG2MDUCHANNEL onsemi |
8,000 | 0.00 |
|
Datasheet |
* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
SFT1446-HMOSFET N-CH 60V 20A TP onsemi |
2,000 | 0.00 |
|
Datasheet |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 20A (Ta) | 4V, 10V | 51mOhm @ 10A, 10V | 2.6V @ 1mA | 16 nC @ 10 V | ±20V | 750 pF @ 20 V | - | 1W (Ta), 23W (Tc) | 150°C (TJ) | - | - | Through Hole | IPAK/TP |
|
ECH8656-TL-HPOWER FIELD-EFFECT TRANSISTOR onsemi |
84,000 | 0.00 |
|
Datasheet |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
FDS8876-F4030V N-CHANNEL POWERTRENCH MOSFET onsemi |
27,500 | 0.00 |
|
- |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 12.5A (Ta) | 4.5V, 10V | 8.2mOhm @ 12.5A, 10V | 2.5V @ 250µA | 36 nC @ 10 V | ±20V | 1650 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
|
FDPC1012S-PFDPC102ASYMMETRDUN-CHANNMOSFET onsemi |
9,797 | 0.00 |
|
Datasheet |
* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
SFT1423-TL-EMOSFET N-CH 500V 2A TP-FA onsemi |
3,500 | 0.00 |
|
Datasheet |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 2A (Ta) | 4V, 10V | 4.9Ohm @ 1A, 10V | - | 8.7 nC @ 10 V | ±20V | 175 pF @ 30 V | - | 1W (Ta), 20W (Tc) | 150°C (TJ) | - | - | Surface Mount | TP-FA |
|
|
2SJ616-TD-E2SJ616 - P CHANNEL MOSFET onsemi |
63,226 | 0.00 |
|
- |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
NTD4809NT4GPOWER FIELD-EFFECT TRANSISTOR, 9 onsemi |
57,735 | 0.00 |
|
Datasheet |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 9.6A (Ta), 58A (Tc) | 4.5V, 11.5V | 9mOhm @ 30A, 10V | 2.5V @ 250µA | 25 nC @ 11.5 V | ±20V | 1456 pF @ 12 V | - | 1.4W (Ta), 52W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | DPAK |
|
|
FDS6612A-NB5E029A30V SINGLE N-CHANNEL, LOGIC LEVE onsemi |
52,854 | 0.00 |
|
- |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 8.4A (Ta) | 4.5V, 10V | 22mOhm @ 8.4A, 10V | 3V @ 250µA | 7.6 nC @ 5 V | ±20V | 560 pF @ 15 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
|
2SJ635-TL-E2SJ635 - P-CHANNEL SILICON MOSFE onsemi |
1,600 | 0.00 |
|
Datasheet |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 60 V | 12A (Ta) | 4V, 10V | 60mOhm @ 6A, 10V | 2.6V @ 1mA | 45 nC @ 10 V | ±20V | 2200 pF @ 20 V | - | 1W (Ta), 30W (Tc) | 150°C | - | - | Through Hole | TP |
