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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
CGD65B240SH2 650V GAN HEMT, 240MOHM, DFN5X6. Cambridge GaN Devices	4,770	RFQ	Datasheet	ICeGaN™	8-PowerVDFN	Cut Tape (CT)	Active	N-Channel	GaNFET (Gallium Nitride)	650 V	7A	12V	336mOhm @ 500mA, 12V	4.2V @ 2.3mA	1.2 nC @ 12 V	+20V, -1V	-	-	-	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-DFN (5x6)
CGD65B200S2-T13 650V GAN HEMT, 200MOHM, DFN5X6. Cambridge GaN Devices	4,174	RFQ	Datasheet	ICeGaN™	8-PowerVDFN	Cut Tape (CT)	Active	-	GaNFET (Gallium Nitride)	650 V	8.5A (Tc)	9V, 20V	280mOhm @ 600mA, 12V	4.2V @ 2.75mA	1.4 nC @ 12 V	+20V, -1V	-	Current Sensing	-	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-DFN (5x6)
CGD65B130SH2 650V GAN HEMT, 130MOHM, DFN5X6. Cambridge GaN Devices	4,992	RFQ	Datasheet	ICeGaN™	8-PowerVDFN	Cut Tape (CT)	Active	N-Channel	GaNFET (Gallium Nitride)	650 V	12A	12V	182mOhm @ 900mA, 12V	4.2V @ 4.2mA	1.9 nC @ 12 V	+20V, -1V	-	-	-	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-DFN (5x6)
CGD65A130SH2 650V GAN HEMT, 130MOHM, DFN8X8. Cambridge GaN Devices	3,469	RFQ	Datasheet	ICeGaN™	16-PowerVDFN	Cut Tape (CT)	Active	N-Channel	GaNFET (Gallium Nitride)	650 V	12A	12V	182mOhm @ 900mA, 12V	4.2V @ 4.2mA	1.9 nC @ 12 V	+20V, -1V	-	-	-	-55°C ~ 150°C (TJ)	-	-	Surface Mount	16-DFN (8x8)
CGD65B130S2-T13 650V GAN HEMT, 130MOHM, DFN5X6. Cambridge GaN Devices	4,875	RFQ	Datasheet	ICeGaN™	8-PowerVDFN	Cut Tape (CT)	Active	-	GaNFET (Gallium Nitride)	650 V	12A (Tc)	9V, 20V	182mOhm @ 900mA, 12V	4.2V @ 4.2mA	2.3 nC @ 12 V	+20V, -1V	-	Current Sensing	-	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-DFN (5x6)
CGD65A130S2-T13 650V GAN HEMT, 130MOHM, DFN8X8. Cambridge GaN Devices	3,306	RFQ	-	ICeGaN™	16-PowerVDFN	Cut Tape (CT)	Active	-	GaNFET (Gallium Nitride)	650 V	12A (Tc)	12V	182mOhm @ 900mA, 12V	4.2V @ 4.2mA	2.3 nC @ 12 V	+20V, -1V	-	Current Sensing	-	-55°C ~ 150°C (TJ)	-	-	Surface Mount	16-DFN (8x8)
CGD65A055SH2 650V GAN HEMT, 55MOHM, DFN8X8. W Cambridge GaN Devices	3,239	RFQ	Datasheet	ICeGaN™ H2	16-PowerVDFN	Cut Tape (CT)	Active	N-Channel	GaNFET (Gallium Nitride)	650 V	27A	12V	77mOhm @ 2.2A, 12V	4.2V @ 10mA	4 nC @ 12 V	+20V, -1V	-	-	-	-55°C ~ 150°C (TJ)	-	-	Surface Mount	16-DFN (8x8)
CGD65A055S2-T07 650V GAN HEMT, 55MOHM, DFN8X8. W Cambridge GaN Devices	674	RFQ	Datasheet	ICeGaN™	16-PowerVDFN	Cut Tape (CT)	Active	-	GaNFET (Gallium Nitride)	650 V	27A (Tc)	12V	77mOhm @ 2.2A, 12V	4.2V @ 10mA	6 nC @ 12 V	+20V, -1V	-	Current Sensing	-	-55°C ~ 150°C (TJ)	-	-	Surface Mount	16-DFN (8x8)

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