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FETs, MOSFETs
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
EPC7003ASHGAN FET HEMT 100V 10A.045OHM 4UB EPC Space, LLC |
25 | 0.00 |
|
Datasheet |
eGaN®, FSMD-A | 4-SMD, No Lead | Bulk | Active | N-Channel, Depletion Mode | GaNFET (Gallium Nitride) | 100 V | 10A (Tc) | 5V | 45mOhm @ 10A, 5V | 2.5V @ 1.4mA | 2.2 nC @ 5 V | +6V, -4V | 233 pF @ 50 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 4-SMD |
|
|
EPC7004BSHGAN FET HEMT EPC Space, LLC |
25 | 0.00 |
|
Datasheet |
eGaN®, FSMD-B | 4-SMD, No Lead | Bulk | Active | N-Channel | GaNFET (Gallium Nitride) | 100 V | 30A (Tc) | 5V | 15mOhm @ 30A, 5V | 2.5V @ 7mA | 11 nC @ 5 V | +6V, -4V | 1000 pF @ 50 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 4-FSMD-B |
|
|
EPC7020GCGAN FET HEMT 200V 80A COTS 5UB EPC Space, LLC |
4,991 | 0.00 |
|
Datasheet |
eGaN® | 5-SMD, No Lead | Bulk | Active | N-Channel | GaNFET (Gallium Nitride) | 200 V | 80A (Tc) | 5V | 14.5mOhm @ 30A, 5V | 2.5V @ 7mA | - | +6V, -4V | 1313 pF @ 100 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 5-SMD |
|
|
EPC7020GSHGAN FET HEMT 200V 80A 5UB EPC Space, LLC |
7,429 | 0.00 |
|
Datasheet |
eGaN® | 5-SMD, No Lead | Bulk | Active | N-Channel | GaNFET (Gallium Nitride) | 200 V | 80A (Tc) | 5V | 14.5mOhm @ 30A, 5V | 2.5V @ 7mA | 13.5 nC @ 100 V | +6V, -4V | 1313 pF @ 100 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 5-SMD |
|
|
FBG10N05ASHGAN FET HEMT 100V 5A 4FSMD-A EPC Space, LLC |
5,947 | 0.00 |
|
Datasheet |
eGaN® | 4-SMD, No Lead | Bulk | Active | N-Channel | GaNFET (Gallium Nitride) | 100 V | 5A (Tc) | 5V | 45mOhm @ 5A, 5V | 2.5V @ 1.2mA | 2.2 nC @ 5 V | +6V, -4V | 233 pF @ 50 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 4-SMD |
|
|
FBG20N04ASHGAN FET HEMT 200V 4A 4FSMD-A EPC Space, LLC |
7,918 | 0.00 |
|
Datasheet |
e-GaN® | 4-SMD, No Lead | Bulk | Active | N-Channel | GaNFET (Gallium Nitride) | 200 V | 4A (Tc) | 5V | 130mOhm @ 4A, 5V | 2.8V @ 1mA | 3 nC @ 5 V | +6V, -4V | 150 pF @ 100 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 4-SMD |
|
|
FBG04N08ASHGAN FET HEMT 40V 8A 4FSMD-A EPC Space, LLC |
4,645 | 0.00 |
|
Datasheet |
e-GaN® | 4-SMD, No Lead | Bulk | Active | N-Channel | GaNFET (Gallium Nitride) | 40 V | 8A (Tc) | 5V | 24mOhm @ 8A, 5V | 2.5V @ 2mA | 2.8 nC @ 5 V | +6V, -4V | 312 pF @ 20 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 4-SMD |
