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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > IGBT Modules

IGBT Modules

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	IGBT Type	Configuration	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Power - Max	Vce(on) (Max) @ Vge, Ic	Current - Collector Cutoff (Max)	Input Capacitance (Cies) @ Vce	Input	NTC Thermistor	Operating Temperature	Mounting Type	Supplier Device Package
IFF2400P17AE4BPSA1 IGBT MODULE 1700V IPM MIPAQP-4 Infineon Technologies	7,968	RFQ	-	-	Module	Bulk	Obsolete	-	Half Bridge	1700 V	-	-	-	-	-	-	No	-40°C ~ 65°C (TA)	-	Module
FSBF15CH60BT-F166 POWER DRIVER MODULE IGBT 600V 15 onsemi	55	RFQ	-	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
FMM7G50US60N INSULATED GATE BIPOLAR TRANSISTO Fairchild Semiconductor	39	RFQ	-	-	Module	Bulk	Obsolete	-	Three Phase Inverter with Brake	600 V	50 A	139 W	2.7V @ 15V, 50A	250 µA	3.565 nF @ 30 V	Three Phase Bridge Rectifier	Yes	-40°C ~ 150°C (TJ)	Through Hole	-
FMM6G30US60 INSULATED GATE BIPOLAR TRANSISTO Fairchild Semiconductor	34	RFQ	-	-	Module	Bulk	Obsolete	-	Three Phase Inverter with Brake	600 V	30 A	104 W	2.7V @ 15V, 30A	250 µA	2.1 nF @ 30 V	Three Phase Bridge Rectifier	Yes	-40°C ~ 150°C (TJ)	Through Hole	-
FMM7G20US60I INSULATED GATE BIPOLAR TRANSISTO Fairchild Semiconductor	34	RFQ	-	-	Module	Bulk	Obsolete	-	Three Phase Inverter with Brake	600 V	20 A	89 W	2.7V @ 15V, 20A	250 µA	1.277 nF @ 30 V	Three Phase Bridge Rectifier	Yes	-40°C ~ 150°C (TJ)	Through Hole	-
FMM7G30US60N INSULATED GATE BIPOLAR TRANSISTO Fairchild Semiconductor	31	RFQ	-	-	Module	Bulk	Obsolete	-	Three Phase Inverter with Brake	600 V	30 A	104 W	2.7V @ 15V, 30A	250 µA	2.1 nF @ 30 V	Three Phase Bridge Rectifier	Yes	-40°C ~ 150°C (TJ)	Through Hole	-
FMM7G50US60I INSULATED GATE BIPOLAR TRANSISTO Fairchild Semiconductor	31	RFQ	-	-	Module	Bulk	Obsolete	-	Three Phase Inverter with Brake	600 V	50 A	139 W	2.7V @ 15V, 50A	250 µA	3.565 nF @ 30 V	Three Phase Bridge Rectifier	Yes	-40°C ~ 150°C (TJ)	Through Hole	-
FMM7G20US60N INSULATED GATE BIPOLAR TRANSISTO Fairchild Semiconductor	22	RFQ	-	-	Module	Bulk	Obsolete	-	Three Phase Inverter with Brake	600 V	20 A	89 W	2.7V @ 15V, 20A	250 µA	1.277 nF @ 30 V	Three Phase Bridge Rectifier	Yes	-40°C ~ 150°C (TJ)	Through Hole	-
FMM7G30US60I INSULATED GATE BIPOLAR TRANSISTO Fairchild Semiconductor	17	RFQ	-	-	Module	Bulk	Obsolete	-	Three Phase Inverter with Brake	600 V	30 A	104 W	2.7V @ 15V, 30A	250 µA	2.1 nF @ 30 V	Three Phase Bridge Rectifier	Yes	-40°C ~ 150°C (TJ)	Through Hole	-
FP15R12W1T4PB11BPSA1 1200 V, 15 A PIM IGBT MODULE Infineon Technologies	22	RFQ	-	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
FP15R12KT3BOSA1 LOW POWER ECONO Infineon Technologies	18	RFQ	-	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
FS35R12KE3GBOSA1 FS35R12 - IGBT MODULE Infineon Technologies	17	RFQ	-	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
BSM75GD60DLCBOSA1 BSM75GD60DLC - IGBT MODULE Infineon Technologies	9	RFQ	-	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
FP75R07N2E4BOSA1 FP75R07 - IGBT MODULE Infineon Technologies	8	RFQ	-	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
FP15R12KS4CBOSA1 FP15R12KS4C - 1200 V, 15 A PIM T Infineon Technologies	20	RFQ	-	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
FP35R12KT4B16BOSA1 FP35R12 - IGBT MODULE Infineon Technologies	17	RFQ	-	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
FS75R12KT3BOSA1 LOW POWER ECONO Infineon Technologies	3	RFQ	-	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
DF300R12KE3HOSA1 MEDIUM POWER 62MM Infineon Technologies	14	RFQ	-	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
DF450R12N2E4PB11BPSA1 LOW POWER ECONO Infineon Technologies	21	RFQ	-	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
FS100R17KE3BOSA1 FS100R17 - IGBT MODULE Infineon Technologies	2	RFQ	-	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-

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