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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
SDS120J010H3-ISATH DIODE 1200V-10A TO247-2L Luminus Devices Inc.	200	RFQ	Datasheet	Sanan TO247	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	36A	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	30 µA @ 1200 V	780pF @ 0V, 1MHz	-	-	Through Hole	TO-247-2L	-55°C ~ 175°C
SDS065J020H3-ISATH DIODE 650V-20A TO247-2L Luminus Devices Inc.	190	RFQ	Datasheet	Sanan TO247	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	51A	1.5 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	1018pF @ 0V, 1MHz	-	-	Through Hole	TO-247-2L	-55°C ~ 175°C
SDS120J015H3-ISATH DIODE 1200V-15A TO247-2L Luminus Devices Inc.	150	RFQ	Datasheet	Sanan TO247	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	51A	1.5 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	45 µA @ 1200 V	1182pF @ 0V, 1MHz	-	-	Through Hole	TO-247-2L	-55°C ~ 175°C
SDS120J015C3-ISATH DIODE 1200V-15A TO220-2L Luminus Devices Inc.	150	RFQ	Datasheet	Sanan TO220	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	51A	1.5 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	45 µA @ 1200 V	1182pF @ 0V, 1MHz	-	-	Through Hole	TO-220-2L	-55°C ~ 175°C
SDS120J027H3-ISATH DIODE 1200V-27A TO247-2L Luminus Devices Inc.	150	RFQ	Datasheet	Sanan TO247	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	77A	1.8 V @ 27 A	No Recovery Time > 500mA (Io)	0 ns	80 µA @ 1200 V	1761pF @ 0V, 1MHz	-	-	Through Hole	TO-247-2L	-55°C ~ 175°C
SDS120J020H3-ISATH DIODE 1200V-20A TO247-2L Luminus Devices Inc.	297	RFQ	Datasheet	Sanan TO247	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	63A	1.5 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 1200 V	1565pF @ 0V, 1MHz	-	-	Through Hole	TO-247-2L	-55°C ~ 175°C
SDS120J030H3-ISATH DIODE 1200V-30A TO247-2L Luminus Devices Inc.	133	RFQ	Datasheet	Sanan TO247	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	95A	1.5 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	72 µA @ 1200 V	2546pF @ 0V, 1MHz	-	-	Through Hole	TO-247-2L	-55°C ~ 175°C
SDS065J050H3-ISATH DIODE 650V-50A TO247-2L Luminus Devices Inc.	148	RFQ	Datasheet	Sanan TO247	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	114A	1.5 V @ 50 A	No Recovery Time > 500mA (Io)	0 ns	120 µA @ 650 V	2970pF @ 0V, 1MHz	-	-	Through Hole	TO-247-2L	-55°C ~ 175°C
SDS170J025H5-ISATH DIODE 1700V-25A TO247-2L Luminus Devices Inc.	150	RFQ	-	-	TO-247-2	Tube	Active	-	1700 V	25A	-	-	-	-	-	-	-	Through Hole	TO-247-2L	-
SDS120J040H3-ISATH DIODE 1200V-40A TO247-2L Luminus Devices Inc.	135	RFQ	Datasheet	Sanan TO247	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	98A	1.6 V @ 40 A	No Recovery Time > 500mA (Io)	0 ns	96 µA @ 1200 V	2648pF @ 0V, 1MHz	-	-	Through Hole	TO-247-2L	-55°C ~ 175°C

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