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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
UT255 DIODE GEN PURP 500V 1A A AXIAL Microchip Technology	2,480	RFQ	-	-	A, Axial	Bulk	Active	Standard	500 V	1A	1 V @ 750 mA	Standard Recovery >500ns, > 200mA (Io)	-	2 µA @ 500 V	-	-	-	Through Hole	A, Axial	-65°C ~ 175°C
UTR10 DIODE GP 100V 500MA A AXIAL Microchip Technology	9,661	RFQ	-	-	A, Axial	Bulk	Active	Standard	100 V	500mA	1.1 V @ 200 mA	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	3 µA @ 100 V	100pF @ 0V, 1MHz	-	-	Through Hole	A, Axial	-65°C ~ 175°C
UTR61 DIODE GEN PURP 600V 1A A AXIAL Microchip Technology	6,866	RFQ	-	-	A, Axial	Bulk	Active	Standard	600 V	1A	1.1 V @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	400 ns	3 µA @ 600 V	40pF @ 0V, 1MHz	-	-	Through Hole	A, Axial	-65°C ~ 175°C
UTR419 DIODE GEN PURP 400V 9A A AXIAL Microchip Technology	3,347	RFQ	-	-	A, Axial	Bulk	Active	Standard	400 V	9A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	-	-	-	-	Through Hole	A, Axial	-65°C ~ 175°C
UTR42 DIODE GEN PURP 400V 2A A AXIAL Microchip Technology	2,136	RFQ	-	-	A, Axial	Bulk	Active	Standard	400 V	2A	1.1 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	350 ns	3 µA @ 400 V	60pF @ 0V, 1MHz	-	-	Through Hole	A, Axial	-65°C ~ 175°C
UTR41 DIODE GEN PURP 400V 1A A AXIAL Microchip Technology	6,640	RFQ	-	-	A, Axial	Bulk	Active	Standard	400 V	1A	1.1 V @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	350 ns	3 µA @ 400 V	60pF @ 0V, 1MHz	-	-	Through Hole	A, Axial	-65°C ~ 175°C
UTR21 DIODE GEN PURP 200V 1A A AXIAL Microchip Technology	8,793	RFQ	-	-	A, Axial	Bulk	Active	Standard	200 V	1A	1.1 V @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	3 µA @ 200 V	80pF @ 0V, 1MHz	-	-	Through Hole	A, Axial	-65°C ~ 175°C
UTR40 DIODE GP 400V 500MA A AXIAL Microchip Technology	6,047	RFQ	-	-	A, Axial	Bulk	Active	Standard	400 V	500mA	1.1 V @ 200 mA	Fast Recovery =< 500ns, > 200mA (Io)	350 ns	3 µA @ 400 V	60pF @ 0V, 1MHz	-	-	Through Hole	A, Axial	-65°C ~ 175°C
UT267 DIODE GEN PURP 600V 2A A AXIAL Microchip Technology	9,855	RFQ	-	-	A, Axial	Bulk	Active	Standard	600 V	2A	1 V @ 900 mA	Standard Recovery >500ns, > 200mA (Io)	-	2 µA @ 600 V	-	-	-	Through Hole	A, Axial	-65°C ~ 175°C
UTR50 DIODE GP 500V 500MA A AXIAL Microchip Technology	5,137	RFQ	-	-	A, Axial	Bulk	Active	Standard	500 V	500mA	1.1 V @ 200 mA	Fast Recovery =< 500ns, > 200mA (Io)	400 ns	3 µA @ 500 V	50pF @ 0V, 1MHz	-	-	Through Hole	A, Axial	-65°C ~ 175°C

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