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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
JANS1N6642UB2R DIODE GEN PURP B SQ-MELF Microchip Technology	8,740	RFQ	-	-	SQ-MELF, B	Bulk	Active	Standard, Reverse Polarity	-	-	1.2 V @ 100 mA	Fast Recovery =< 500ns, > 200mA (Io)	20 ns	-	5pF @ 0V, 1MHz	Military	MIL-PRF-19500/578	Surface Mount	B, SQ-MELF	-
JANS1N6642UB2R/TR SIGNAL OR COMPUTER DIODE Microchip Technology	7,964	RFQ	-	-	2-SMD, No Lead	Tape & Reel (TR)	Active	Standard	75 V	300mA	1.2 V @ 100 mA	Fast Recovery =< 500ns, > 200mA (Io)	5 ns	500 nA @ 75 V	5pF @ 0V, 1MHz	Military	MIL-PRF-19500/578	Surface Mount	UB2	-65°C ~ 175°C
JANS1N6642UB2/TR SIGNAL OR COMPUTER DIODE Microchip Technology	3,600	RFQ	-	-	2-SMD, No Lead	Tape & Reel (TR)	Active	Standard	75 V	300mA	1.2 V @ 100 mA	Fast Recovery =< 500ns, > 200mA (Io)	5 ns	500 nA @ 75 V	5pF @ 0V, 1MHz	Military	MIL-PRF-19500/578	Surface Mount	UB2	-65°C ~ 175°C
1N6651 RECTIFIER DIODE Microchip Technology	3,994	RFQ	-	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
JANS1N5552 DIODE GEN PURP 600V 3A AXIAL Microchip Technology	6,589	RFQ	Datasheet	-	B, Axial	Bulk	Active	Standard	600 V	3A	1.2 V @ 9 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	1 µA @ 600 V	-	Military	MIL-PRF-19500/420	Through Hole	B, Axial	-65°C ~ 175°C
JANS1N5550 DIODE GEN PURP 200V 5A B AXIAL Microchip Technology	2,604	RFQ	-	-	B, Axial	Bulk	Active	Standard	200 V	5A	1.2 V @ 9 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	-	-	Military	MIL-PRF-19500/420	Through Hole	B, Axial	-65°C ~ 175°C
JANS1N5551 DIODE GEN PURP 400V 5A B AXIAL Microchip Technology	7,254	RFQ	-	-	B, Axial	Bulk	Active	Standard	400 V	5A	1.2 V @ 9 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	-	-	Military	MIL-PRF-19500/420	Through Hole	B, Axial	-65°C ~ 175°C
JANS1N5553 DIODE GEN PURP 800V 5A B AXIAL Microchip Technology	2,456	RFQ	-	-	B, Axial	Bulk	Active	Standard	800 V	5A	1.3 V @ 9 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	-	-	Military	MIL-PRF-19500/420	Through Hole	B, Axial	-65°C ~ 175°C
JANS1N5554 DIODE GEN PURP 5A B AXIAL Microchip Technology	4,520	RFQ	-	-	B, Axial	Bulk	Active	Standard	-	5A	1.3 V @ 9 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	1 µA @ 1000 V	-	Military	MIL-PRF-19500/420	Through Hole	B, Axial	-65°C ~ 175°C
JANS1N5553/TR DIODE GEN PURP 800V 5A B AXIAL Microchip Technology	5,232	RFQ	Datasheet	-	B, Axial	Tape & Reel (TR)	Active	Standard	800 V	5A	1.3 V @ 9 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	-	-	Military	MIL-PRF-19500/420	Through Hole	B, Axial	-65°C ~ 175°C

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