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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
JANTX1N6643U DIODE GEN PURP 50V 300MA D-5B Microchip Technology	4,059	RFQ	-	-	SQ-MELF, E	Bulk	Active	Standard	50 V	300mA	1.2 V @ 100 mA	Fast Recovery =< 500ns, > 200mA (Io)	20 ns	500 nA @ 50 V	-	Military	MIL-PRF-19500/578	Surface Mount	D-5B	-65°C ~ 175°C
DGS10-018A DIODE SCHOTTKY 180V 15A TO220AC IXYS	3,809	RFQ	Datasheet	-	TO-220-2	Tube	Obsolete	Schottky	180 V	15A	1.1 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.3 mA @ 180 V	-	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
DGS10-025A DIODE SCHOTTKY 250V 12A TO220AC IXYS	4,871	RFQ	Datasheet	-	TO-220-2	Tube	Obsolete	Schottky	250 V	12A	1.5 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.3 mA @ 250 V	-	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
DGS10-030A DIODE SCHOTTKY 300V 11A TO220AC IXYS	2,927	RFQ	Datasheet	-	TO-220-2	Tube	Obsolete	Schottky	300 V	11A	2 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.3 mA @ 300 V	-	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
1N6641 DIODE GEN PURPOSE Microchip Technology	6,025	RFQ	-	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
1N6643US/TR DIODE GEN PURP 50V 300MA D-5B Microchip Technology	3,341	RFQ	-	-	SQ-MELF, E	Tape & Reel (TR)	Active	Standard	50 V	300mA	1.2 V @ 100 mA	Fast Recovery =< 500ns, > 200mA (Io)	20 ns	50 nA @ 50 V	5pF @ 0V, 1MHz	-	-	Surface Mount	D-5B	-65°C ~ 175°C
1N6643U/TR DIODE GP 75V 300MA SQ-MELF B Microchip Technology	4,632	RFQ	-	-	SQ-MELF, B	Tape & Reel (TR)	Active	Standard	75 V	300mA	1.2 V @ 100 mA	Fast Recovery =< 500ns, > 200mA (Io)	6 ns	500 nA @ 50 V	5pF @ 0V, 1MHz	-	-	Surface Mount	B, SQ-MELF	-65°C ~ 200°C
CD5809 UFR,FRR Microchip Technology	3,136	RFQ	-	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
CD5811 UFR,FRR Microchip Technology	7,785	RFQ	-	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
JAN1N6640US/TR DIODE GEN PURP 50V 300MA D-5B Microchip Technology	3,520	RFQ	-	-	SQ-MELF, E	Tape & Reel (TR)	Active	Standard	50 V	300mA	1 V @ 300 mA	Fast Recovery =< 500ns, > 200mA (Io)	4 ns	100 nA @ 50 V	-	Military	MIL-PRF-19500/609	Surface Mount	D-5B	-65°C ~ 175°C
JANTX1N5809/TR DIODE GEN PURP 100V 3A Microchip Technology	8,243	RFQ	Datasheet	-	B, Axial	Tape & Reel (TR)	Active	Standard	100 V	3A	875 mV @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	5 µA @ 100 V	60pF @ 10V, 1MHz	Military	MIL-PRF-19500/477	Through Hole	B, Axial	-65°C ~ 175°C
JANTX1N5807/TR DIODE GEN PURP 50V 3A Microchip Technology	4,655	RFQ	Datasheet	-	B, Axial	Tape & Reel (TR)	Active	Standard	50 V	3A	875 mV @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	5 µA @ 50 V	60pF @ 10V, 1MHz	Military	MIL-PRF-19500/477	Through Hole	B, Axial	-65°C ~ 175°C
SCS110AMC DIODE SIL CARB 600V 10A TO220FM Rohm Semiconductor	4,548	RFQ	Datasheet	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	600 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 600 V	430pF @ 1V, 1MHz	-	-	Through Hole	TO-220FM	150°C (Max)
1N5811USE3 DIODE GEN PURP 150V 3A B SQ-MELF Microchip Technology	6,776	RFQ	-	-	SQ-MELF, B	Bulk	Active	Standard	150 V	3A	875 mV @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	-	-	-	-	Surface Mount	B, SQ-MELF	-65°C ~ 175°C
1N457AUR DIODE GP 70V 150MA DO213AA Microchip Technology	2,234	RFQ	Datasheet	-	DO-213AA	Bulk	Active	Standard	70 V	150mA	1 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	-	1 µA @ 70 V	-	-	-	Surface Mount	DO-213AA	-65°C ~ 150°C
DGS9-025AS DIODE SCHOTTKY 250V 12A TO252AA IXYS	4,844	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Obsolete	Schottky	250 V	12A	1.5 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.3 mA @ 250 V	-	-	-	Surface Mount	TO-252AA	-55°C ~ 175°C
1N3614/TR DIODE GEN PURP 800V 1A Microchip Technology	7,516	RFQ	Datasheet	-	A, Axial	Tape & Reel (TR)	Active	Standard	800 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	1 µA @ 800 V	-	-	-	Through Hole	A, Axial	-65°C ~ 175°C
1N5550US/TR DIODE GEN PURP 200V 3A B SQ-MELF Microchip Technology	5,051	RFQ	Datasheet	-	SQ-MELF, B	Tape & Reel (TR)	Active	Standard	200 V	3A	1.2 V @ 9 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	1 µA @ 200 V	-	-	-	Surface Mount	B, SQ-MELF	-65°C ~ 175°C
1N5550USE3 DIODE GEN PURP 200V 3A B SQ-MELF Microchip Technology	8,708	RFQ	Datasheet	-	SQ-MELF, B	Bulk	Active	Standard	200 V	3A	1.2 V @ 9 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	1 µA @ 200 V	-	-	-	Surface Mount	B, SQ-MELF	-65°C ~ 175°C
VS-80APF02-M3 DIODE GEN PURP 200V 80A TO247AC Vishay General Semiconductor - Diodes Division	2,385	RFQ	Datasheet	-	TO-247-3	Tube	Active	Standard	200 V	80A	1.25 V @ 80 A	Fast Recovery =< 500ns, > 200mA (Io)	190 ns	100 µA @ 200 V	-	-	-	Through Hole	TO-247AC	-40°C ~ 150°C

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