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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
JANTX1N5417US DIODE GEN PURP 200V 3A D-5B Microchip Technology	9,866	RFQ	Datasheet	-	SQ-MELF, E	Bulk	Active	Standard	200 V	3A	1.5 V @ 9 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	1 µA @ 200 V	-	Military	MIL-PRF-19500/411	Surface Mount	D-5B	-65°C ~ 175°C
1N5808 DIODE RECT ULT FAST REC B-PKG Microchip Technology	9,730	RFQ	-	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
1N5810 DIODE GEN PURP 6A AXIAL Microchip Technology	9,053	RFQ	-	-	Axial	Bulk	Active	Standard	-	6A	875 mV @ 4 A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	-	-	Through Hole	Axial	-
GKN71/16 DIODE GEN PURP 1.6KV 95A DO5 GeneSiC Semiconductor	6,077	RFQ	-	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard	1600 V	95A	1.5 V @ 60 A	Standard Recovery >500ns, > 200mA (Io)	-	10 mA @ 1600 V	-	-	-	Chassis, Stud Mount	DO-5	-40°C ~ 180°C
JANTXV1N5621/TR DIODE GEN PURP 800V 1A Microchip Technology	9,227	RFQ	-	-	A, Axial	Tape & Reel (TR)	Active	Standard	800 V	1A	1.6 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	300 ns	500 nA @ 800 V	20pF @ 12V, 1MHz	Military	MIL-PRF-19500/429	Through Hole	A, Axial	-65°C ~ 175°C
JANTXV1N6640/TR DIODE GEN PURP 50V 300MA DO35 Microchip Technology	9,903	RFQ	-	-	DO-204AH, DO-35, Axial	Tape & Reel (TR)	Active	Standard	50 V	300mA	1 V @ 200 mA	Fast Recovery =< 500ns, > 200mA (Io)	4 ns	100 nA @ 50 V	-	Military	MIL-PRF-19500/609	Through Hole	DO-204AH (DO-35)	-65°C ~ 175°C
JANTXV1N6639US/TR SIGNAL OR COMPUTER DIODE Microchip Technology	3,836	RFQ	-	*	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
1N5811AUS RECTIFIER DIODE Microsemi Corporation	3,469	RFQ	-	-	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
JAN1N5550US/TR DIODE GEN PURP 200V 3A D-5B Microchip Technology	3,839	RFQ	-	-	SQ-MELF, E	Tape & Reel (TR)	Active	Standard	200 V	3A	1.2 V @ 9 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	1 µA @ 200 V	-	Military	MIL-PRF-19500/420	Surface Mount	D-5B	-65°C ~ 175°C
JANTX1N5188/TR DIODE GEN PURP 400V 3A Microchip Technology	6,788	RFQ	Datasheet	-	B, Axial	Tape & Reel (TR)	Active	Standard	400 V	3A	1.5 V @ 9 A	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	2 µA @ 400 V	-	Military	MIL-PRF-19500/424	Through Hole	B, Axial	-65°C ~ 175°C
JAN1N4153UR-1 DIODE GEN PURP 50V 150MA DO213AA Microchip Technology	4,423	RFQ	-	-	DO-213AA	Bulk	Active	Standard	50 V	150mA	880 mV @ 20 mA	Small Signal =< 200mA (Io), Any Speed	4 ns	-	-	Military	MIL-PRF-19500/337	Surface Mount	DO-213AA	-65°C ~ 175°C
JAN1N3595AUR-1/TR SIGNAL OR COMPUTER DIODE Microchip Technology	7,753	RFQ	Datasheet	-	DO-213AA	Tape & Reel (TR)	Active	Standard	125 V	150mA	920 mV @ 100 mA	Small Signal =< 200mA (Io), Any Speed	3 µs	2 nA @ 125 V	-	Military	MIL-PRF-19500/241	Surface Mount	DO-213AA	-65°C ~ 175°C
JANTX1N5418US DIODE GEN PURP 400V 3A D-5B Microchip Technology	7,496	RFQ	Datasheet	-	SQ-MELF, E	Bulk	Active	Standard	400 V	3A	1.5 V @ 9 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	2 µA @ 400 V	-	Military	MIL-PRF-19500/411	Surface Mount	D-5B	-65°C ~ 175°C
JANTXV1N5622 DIODE GEN PURP 1KV 1A AXIAL Microchip Technology	4,223	RFQ	Datasheet	-	A, Axial	Bulk	Active	Standard	1000 V	1A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	500 nA @ 1000 V	-	Military	MIL-PRF-19500/427	Through Hole	A, Axial	-65°C ~ 200°C
JAN1N5802US/TR DIODE GEN PURP 50V 2.5A D-5A Microchip Technology	4,628	RFQ	Datasheet	-	SQ-MELF, A	Tape & Reel (TR)	Active	Standard	50 V	2.5A	975 mV @ 2.5 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	1 µA @ 50 V	25pF @ 10V, 1MHz	Military	MIL-PRF-19500/477	Surface Mount	D-5A	-65°C ~ 175°C
GKR71/16 DIODE GEN PURP 1.6KV 95A DO5 GeneSiC Semiconductor	8,471	RFQ	-	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard	1600 V	95A	1.5 V @ 60 A	Standard Recovery >500ns, > 200mA (Io)	-	10 mA @ 1600 V	-	-	-	Chassis, Stud Mount	DO-5	-40°C ~ 180°C
PCFFS40120AF DIODE SIL CARB 1.2KV WAFER DIE onsemi	2,472	RFQ	Datasheet	-	Die	Tray	Active	SiC (Silicon Carbide) Schottky	1200 V	61A	1.75 V @ 40 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	2250pf @ 1V, 100kHz	-	-	Surface Mount	Die	-55°C ~ 175°C
GKR71/12 DIODE GEN PURP 1.2KV 95A DO5 GeneSiC Semiconductor	8,945	RFQ	-	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard	1200 V	95A	1.5 V @ 60 A	Standard Recovery >500ns, > 200mA (Io)	-	10 mA @ 1200 V	-	-	-	Chassis, Stud Mount	DO-5	-40°C ~ 180°C
JAN1N5416US DIODE GEN PURP 100V 3A AXIAL Microchip Technology	3,311	RFQ	Datasheet	-	B, Axial	Bulk	Active	Standard	100 V	3A	1.5 V @ 9 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	1 µA @ 100 V	-	Military	MIL-PRF-19500/411	Through Hole	B, Axial	-65°C ~ 175°C
JAN1N5420US DIODE GEN PURP 600V 3A D-5B Microchip Technology	3,721	RFQ	Datasheet	-	SQ-MELF, E	Bulk	Active	Standard	600 V	3A	1.5 V @ 9 A	Fast Recovery =< 500ns, > 200mA (Io)	400 ns	1 µA @ 600 V	-	Military	MIL-PRF-19500/411	Surface Mount	D-5B	-65°C ~ 175°C

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