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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
1N3293 DIODE GEN PURP 600V 100A DO205AA Vishay General Semiconductor - Diodes Division	4,189	RFQ	Datasheet	-	DO-205AA, DO-8, Stud	Bulk	Obsolete	Standard	600 V	100A	1.5 V @ 100 A	Standard Recovery >500ns, > 200mA (Io)	-	17 mA @ 600 V	-	-	-	Chassis, Stud Mount	DO-205AA (DO-8)	-40°C ~ 200°C
1N3293R DIODE GEN PURP 600V 100A DO205AA Vishay General Semiconductor - Diodes Division	4,747	RFQ	Datasheet	-	DO-205AA, DO-8, Stud	Bulk	Obsolete	Standard	600 V	100A	1.5 V @ 100 A	Standard Recovery >500ns, > 200mA (Io)	-	17 mA @ 600 V	-	-	-	Chassis, Stud Mount	DO-205AA (DO-8)	-40°C ~ 200°C
C3D10170H DIODE SIL CARB 1.7KV 14.4A TO247 Wolfspeed, Inc.	9,170	RFQ	-	Z-Rec®	TO-247-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	1700 V	14.4A	2 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 1700 V	827pF @ 0V, 1MHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
1N5822/TR DIODE SCHOTTKY 40V 3A Microchip Technology	5,608	RFQ	Datasheet	-	B, Axial	Tape & Reel (TR)	Active	Schottky	40 V	3A	500 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 40 V	-	-	-	Through Hole	B, Axial	-65°C ~ 125°C
JANTX1N6620US DIODE GEN PURP 220V 2A D-5A Microchip Technology	6,531	RFQ	Datasheet	-	SQ-MELF, A	Bulk	Active	Standard	220 V	2A	1.4 V @ 1.2 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	500 nA @ 220 V	10pF @ 10V, 1MHz	Military	MIL-PRF-19500/585	Surface Mount	D-5A	-65°C ~ 150°C
JANTX1N6629 DIODE GEN PURP 880V 1.4A Microsemi Corporation	5,833	RFQ	Datasheet	-	E, Axial	Bulk	Active	Standard	880 V	1.4A	1.4 V @ 1.4 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	2 µA @ 880 V	40pF @ 10V, 1MHz	Military	MIL-PRF-19500/590	Through Hole	-	-65°C ~ 150°C
JANTX1N6620U DIODE GEN PURP 200V 1.2A D-5A Microsemi Corporation	7,571	RFQ	-	-	SQ-MELF, A	Bulk	Active	Standard	200 V	1.2A	1.4 V @ 1.2 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	500 nA @ 200 V	-	Military	MIL-PRF-19500/585	Surface Mount	D-5A	-65°C ~ 150°C
JANTX1N6630 DIODE GEN PURP 900V 3A E AXIAL Microchip Technology	2,358	RFQ	-	-	E, Axial	Bulk	Active	Standard	900 V	3A	1.7 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	2 µA @ 990 V	40pF @ 10V, 1MHz	Military	MIL-PRF-19500/590	Through Hole	E, Axial	-65°C ~ 175°C
JANTX1N6623 DIODE GEN PURP 880V 1A AXIAL Microchip Technology	3,076	RFQ	Datasheet	-	A, Axial	Bulk	Active	Standard	880 V	1A	1.55 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	500 nA @ 880 V	10pF @ 10V, 1MHz	Military	MIL-PRF-19500/585	Through Hole	A, Axial	-65°C ~ 150°C
1N6075 DIODE GEN PURP 150V 850MA AXIAL Microchip Technology	6,305	RFQ	Datasheet	-	A, Axial	Bulk	Active	Standard	150 V	850mA	2.04 V @ 9.4 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	1 µA @ 150 V	-	-	-	Through Hole	A, Axial	-65°C ~ 155°C
JANTX1N6631 DIODE GEN PURP 2A E AXIAL Microchip Technology	4,300	RFQ	-	-	E, Axial	Bulk	Active	Standard	-	2A	1.95 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	4 µA @ 1000 V	40pF @ 10V, 1MHz	Military	MIL-PRF-19500/590	Through Hole	E, Axial	-65°C ~ 175°C
1N6625US DIODE GEN PURP 1.1KV 1A A-MELF Microchip Technology	8,584	RFQ	Datasheet	-	SQ-MELF, A	Bulk	Active	Standard	1100 V	1A	1.75 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	1 µA @ 1100 V	10pF @ 10V, 1MHz	-	-	Surface Mount	A-MELF	-65°C ~ 150°C
JANTX1N6623/TR DIODE GEN PURP 880V 1A Microchip Technology	4,020	RFQ	-	-	A, Axial	Tape & Reel (TR)	Active	Standard	880 V	1A	1.55 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	500 nA @ 880 V	10pF @ 10V, 1MHz	Military	MIL-PRF-19500/585	Through Hole	A, Axial	-65°C ~ 150°C
JANTX1N6623US/TR DIODE GEN PURP 880V 1A D-5A Microchip Technology	8,350	RFQ	-	-	SQ-MELF, A	Tape & Reel (TR)	Active	Standard	880 V	1A	1.55 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	500 nA @ 880 V	10pF @ 10V, 1MHz	Military	MIL-PRF-19500/585	Surface Mount	D-5A	-65°C ~ 150°C
JANTX1N6631/TR DIODE GEN PURP 2A E AXIAL Microchip Technology	3,690	RFQ	-	-	E, Axial	Tape & Reel (TR)	Active	Standard	-	2A	1.95 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	4 µA @ 1000 V	40pF @ 10V, 1MHz	Military	MIL-PRF-19500/590	Through Hole	E, Axial	-65°C ~ 175°C
JANTX1N6623U/TR DIODE GP 800V 1.5A A SQ-MELF Microchip Technology	7,402	RFQ	-	-	SQ-MELF, A	Tape & Reel (TR)	Active	Standard	800 V	1.5A	1.8 V @ 1.5 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	500 nA @ 800 V	-	Military	MIL-PRF-19500/585	Surface Mount	A, SQ-MELF	-65°C ~ 175°C
1N6625US/TR DIODE GEN PURP 1.1KV 1A A-MELF Microchip Technology	7,939	RFQ	Datasheet	-	SQ-MELF, A	Tape & Reel (TR)	Active	Standard	1100 V	1A	1.75 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	1 µA @ 1100 V	10pF @ 10V, 1MHz	-	-	Surface Mount	A-MELF	-65°C ~ 150°C
1N6624US/TR DIODE GEN PURP 990V 1A D-5A Microchip Technology	7,488	RFQ	-	-	SQ-MELF, A	Tape & Reel (TR)	Active	Standard	990 V	1A	1.55 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	500 nA @ 900 V	-	-	-	Surface Mount	D-5A	-65°C ~ 150°C
1N6624U/TR DIODE GP 990V 1A A SQ-MELF Microchip Technology	3,623	RFQ	-	-	SQ-MELF, A	Tape & Reel (TR)	Active	Standard	990 V	1A	1.55 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	500 nA @ 990 V	-	-	-	Surface Mount	A, SQ-MELF	-65°C ~ 150°C
LSIC2SD120E30CC DIODE SIL CARB 1.2KV 44A TO247AD Littelfuse Inc.	9,654	RFQ	Datasheet	Gen2	TO-247-3	Tube	Obsolete	SiC (Silicon Carbide) Schottky	1200 V	44A	1.8 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 1200 V	920pF @ 1V, 1MHz	-	-	Through Hole	TO-247AD	-55°C ~ 175°C

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