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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
JAN1N3646 DIODE GP 1.75KV 250MA S AXIAL Microchip Technology	8,434	RFQ	Datasheet	-	S, Axial	Bulk	Active	Standard	1750 V	250mA	5 V @ 250 mA	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 1750 V	-	Military	MIL-PRF-19500/279	Through Hole	S, Axial	-65°C ~ 175°C
1N4254 RECTIFIER DIODE Microchip Technology	9,093	RFQ	Datasheet	-	S, Axial	Bulk	Active	Standard	1500 V	250mA	3.5 V @ 100 mA	Standard Recovery >500ns, > 200mA (Io)	-	1 µA @ 1500 V	-	-	-	Through Hole	S, Axial	-65°C ~ 175°C
JANTX1N6073 DIODE GEN PURP 50V 850MA A-PAK Microchip Technology	2,160	RFQ	Datasheet	-	A, Axial	Bulk	Active	Standard	50 V	850mA	2.04 V @ 9.4 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	1 µA @ 50 V	-	Military	MIL-PRF-19500/503	Through Hole	A-PAK	-65°C ~ 155°C
JANTXV1N3595UR-1 DIODE GP 125V 150MA DO213AA Microchip Technology	5,524	RFQ	Datasheet	-	DO-213AA	Bulk	Discontinued at Digi-Key	Standard	125 V	150mA	920 mV @ 100 mA	Small Signal =< 200mA (Io), Any Speed	3 µs	2 nA @ 125 V	-	Military	MIL-PRF-19500/241	Surface Mount	DO-213AA	-65°C ~ 175°C
PCFFS30120AF DIODE SIL CARB 1.2KV WAFER DIE onsemi	3,142	RFQ	Datasheet	-	Die	Tray	Active	SiC (Silicon Carbide) Schottky	1200 V	46A	1.75 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	1740pf @ 1V, 100kHz	-	-	Surface Mount	Die	-55°C ~ 175°C
JANTX1N6622US DIODE GEN PURP 660V 2A D-5A Microchip Technology	5,137	RFQ	Datasheet	-	SQ-MELF, A	Bulk	Active	Standard	660 V	2A	1.4 V @ 1.2 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	500 nA @ 660 V	10pF @ 10V, 1MHz	Military	MIL-PRF-19500/585	Surface Mount	D-5A	-65°C ~ 150°C
JANTX1N6622U DIODE GEN PURP 600V 1.2A D-5A Microchip Technology	6,259	RFQ	-	-	SQ-MELF, A	Bulk	Active	Standard	600 V	1.2A	1.4 V @ 1.2 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	500 nA @ 600 V	-	Military	MIL-PRF-19500/585	Surface Mount	D-5A	-65°C ~ 150°C
STPSC1006G-TR DIODE SIL CARBIDE 600V 10A D2PAK STMicroelectronics	5,886	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	SiC (Silicon Carbide) Schottky	600 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	150 µA @ 600 V	650pF @ 0V, 1MHz	-	-	Surface Mount	D2PAK	-40°C ~ 175°C
JANTXV1N3595UR-1/TR DIODE GP 125V 150MA DO213AA Microchip Technology	8,652	RFQ	-	-	DO-213AA	Tape & Reel (TR)	Active	Standard	125 V	150mA	920 mV @ 100 mA	Small Signal =< 200mA (Io), Any Speed	3 µs	2 nA @ 125 V	-	Military	MIL-PRF-19500/241	Surface Mount	DO-213AA	-65°C ~ 175°C
DGS20-018A DIODE SCHOTTKY 180V 23A TO220AC IXYS	7,602	RFQ	Datasheet	-	TO-220-2	Tube	Obsolete	Schottky	180 V	23A	1 V @ 7.5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	2 mA @ 180 V	-	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
UES1105E3 DIODE GEN PURP 300V 1A A AXIAL Microchip Technology	2,055	RFQ	-	-	Axial	Bulk	Active	Standard	300 V	1A	1.25 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 300 V	-	-	-	Through Hole	A, Axial	-55°C ~ 150°C
UES1105E3/TR DIODE GEN PURP 300V 1A A AXIAL Microchip Technology	9,470	RFQ	-	-	Axial	Tape & Reel (TR)	Active	Standard	300 V	1A	1.25 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 300 V	-	-	-	Through Hole	A, Axial	-55°C ~ 150°C
1N6540 DIODE RECT ULT FAST REC A-PKG Microchip Technology	7,185	RFQ	-	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
1N6625E3/TR DIODE GEN PURP 1.1KV 1A A AXIAL Microchip Technology	5,514	RFQ	-	-	A, Axial	Tape & Reel (TR)	Active	Standard	1100 V	1A	1.95 V @ 1.5 A	Fast Recovery =< 500ns, > 200mA (Io)	80 ns	1 µA @ 1100 V	-	-	-	Through Hole	A, Axial	-65°C ~ 150°C
JANTX1N6622US/TR DIODE GEN PURP 660V 2A D-5A Microchip Technology	4,018	RFQ	-	-	SQ-MELF, A	Tape & Reel (TR)	Active	Standard	660 V	2A	1.4 V @ 1.2 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	500 nA @ 660 V	10pF @ 10V, 1MHz	Military	MIL-PRF-19500/585	Surface Mount	D-5A	-65°C ~ 150°C
JANTX1N6622U/TR DIODE GP 660V 1.2A A SQ-MELF Microchip Technology	9,545	RFQ	-	-	SQ-MELF, A	Tape & Reel (TR)	Active	Standard	660 V	1.2A	1.4 V @ 1.2 A	Fast Recovery =< 500ns, > 200mA (Io)	45 ns	500 nA @ 660 V	-	Military	MIL-PRF-19500/585	Surface Mount	A, SQ-MELF	-65°C ~ 150°C
SIDC78D170HX1SA1 DIODE GP 1.7KV 150A WAFER Infineon Technologies	9,675	RFQ	Datasheet	-	Die	Bulk	Discontinued at Digi-Key	Standard	1700 V	150A	1.8 V @ 150 A	Standard Recovery >500ns, > 200mA (Io)	-	27 µA @ 1700 V	-	-	-	Surface Mount	Sawn on foil	-55°C ~ 150°C
1N5821US DIODE SCHOTTKY 30V 3A B SQ-MELF Microchip Technology	9,741	RFQ	Datasheet	-	SQ-MELF, B	Bulk	Discontinued at Digi-Key	Schottky	30 V	3A	500 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 30 V	-	-	-	Surface Mount	B, SQ-MELF	-65°C ~ 125°C
DSA35-18A DIODE AVAL 1.8KV 49A DO203AB IXYS	9,679	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Box	Obsolete	Avalanche	1800 V	49A	1.55 V @ 150 A	Standard Recovery >500ns, > 200mA (Io)	-	4 mA @ 1800 V	-	-	-	Chassis, Stud Mount	DO-203AB	-40°C ~ 180°C
DSAI35-18A DIODE AVAL 1.8KV 49A DO203AB IXYS	9,172	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Box	Obsolete	Avalanche	1800 V	49A	1.55 V @ 150 A	Standard Recovery >500ns, > 200mA (Io)	-	4 mA @ 1800 V	-	-	-	Chassis, Stud Mount	DO-203AB	-40°C ~ 180°C

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