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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
JANS1N5804US/TR DIODE GEN PURP 100V 1A A AXIAL Microchip Technology	3,825	RFQ	Datasheet	-	A, Axial	Tape & Reel (TR)	Active	Standard	100 V	1A	975 mV @ 2.5 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	1 µA @ 150 V	25pF @ 10V, 1MHz	Military	MIL-PRF-19500/477	Through Hole	A, Axial	-65°C ~ 175°C
JANS1N5804US DIODE GEN PURP 100V 1A A AXIAL Microchip Technology	3,420	RFQ	-	-	A, Axial	Bulk	Active	Standard	100 V	1A	975 mV @ 2.5 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	1 µA @ 150 V	25pF @ 10V, 1MHz	Military	MIL-PRF-19500/477	Through Hole	A, Axial	-65°C ~ 175°C
JANS1N5802US DIODE GEN PURP 50V 1A A AXIAL Microchip Technology	3,624	RFQ	-	-	A, Axial	Bulk	Active	Standard	50 V	1A	975 mV @ 2.5 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	-	25pF @ 10V, 1MHz	Military	MIL-PRF-19500/477	Through Hole	A, Axial	-65°C ~ 175°C
JANTXV1N6627US DIODE GEN PURP 440V 1.75A D-5B Microchip Technology	5,861	RFQ	Datasheet	-	SQ-MELF, E	Bulk	Active	Standard	440 V	1.75A	1.35 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	2 µA @ 440 V	40pF @ 10V, 1MHz	Military	MIL-PRF-19500/590	Surface Mount	D-5B	-65°C ~ 150°C
JANTXV1N6627U DIODE GEN PURP 400V 1.75A D-5B Microchip Technology	8,433	RFQ	-	-	SQ-MELF, E	Bulk	Active	Standard	400 V	1.75A	1.35 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	2 µA @ 400 V	-	Military	MIL-PRF-19500/590	Surface Mount	D-5B	-65°C ~ 150°C
UES1301SM DIODE GEN PURP 50V 8A D-5B Microchip Technology	6,583	RFQ	-	-	SQ-MELF, E	Bulk	Active	Standard	50 V	8A	925 mV @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	-	-	-	-	Surface Mount	D-5B	-
UES1302SM DIODE GEN PURP 100V 8A D-5B Microchip Technology	5,617	RFQ	-	-	SQ-MELF, E	Bulk	Active	Standard	100 V	8A	925 mV @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	-	-	-	-	Surface Mount	D-5B	-
DHG55I3300FE DIODE GP 3.3KV 50A ISOPLUS I4PAC IXYS	6,335	RFQ	Datasheet	-	i4-Pac™-5 (2 Leads)	Tube	Active	Standard	3300 V	50A	3.4 V @ 60 A	Standard Recovery >500ns, > 200mA (Io)	1.65 µs	100 µA @ 3300 V	16pF @ 1.8kV, 1MHz	-	-	Through Hole	ISOPLUS i4-PAC™	-40°C ~ 150°C
JANTXV1N6627US/TR DIODE GEN PURP 440V 1.75A D-5B Microchip Technology	4,824	RFQ	-	-	SQ-MELF, E	Tape & Reel (TR)	Active	Standard	440 V	1.75A	1.35 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	2 µA @ 440 V	40pF @ 10V, 1MHz	Military	MIL-PRF-19500/590	Surface Mount	D-5B	-65°C ~ 150°C
JANTXV1N6627U/TR DIODE GEN PURP 400V 1.75A D-5B Microchip Technology	3,118	RFQ	-	-	SQ-MELF, E	Tape & Reel (TR)	Active	Standard	400 V	1.75A	1.35 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	2 µA @ 400 V	-	Military	MIL-PRF-19500/590	Surface Mount	D-5B	-65°C ~ 150°C
JANTXV1N6642UB2 DIODE GEN PURP 75V 300MA UB2 Microchip Technology	7,117	RFQ	-	-	2-SMD, No Lead	Bulk	Active	Standard	75 V	300mA	1.2 V @ 100 mA	Fast Recovery =< 500ns, > 200mA (Io)	20 ns	500 nA @ 75 V	-	Military	MIL-PRF-19500/578	Surface Mount	UB2	-65°C ~ 175°C
JANTXV1N6642UB2R DIODE GEN PURP 75V 300MA UB2 Microchip Technology	8,230	RFQ	-	-	2-SMD, No Lead	Bulk	Active	Standard, Reverse Polarity	75 V	300mA	1.2 V @ 100 mA	Fast Recovery =< 500ns, > 200mA (Io)	20 ns	500 nA @ 75 V	-	Military	MIL-PRF-19500/578	Surface Mount	UB2	-65°C ~ 175°C
1N4459 DIODE GEN PURP 1KV 15A DO203AA Microchip Technology	9,800	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard	1000 V	15A	1.5 V @ 15 A	Standard Recovery >500ns, > 200mA (Io)	-	50 µA @ 1000 V	-	-	-	Chassis, Stud Mount	DO-203AA	-65°C ~ 175°C
1N4458 DIODE GEN PURP 800V 15A DO203AA Microchip Technology	6,312	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard	800 V	15A	1.5 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 800 V	-	-	-	Chassis, Stud Mount	DO-203AA (DO-4)	-65°C ~ 175°C
1N4458R DIODE GP REV 800V 15A DO203AA Microchip Technology	8,159	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard, Reverse Polarity	800 V	15A	1.5 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 800 V	-	-	-	Chassis, Stud Mount	DO-203AA (DO-4)	-65°C ~ 175°C
1N4459R DIODE GP REV 1KV 15A DO203AA Microchip Technology	3,860	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard, Reverse Polarity	1000 V	15A	1.5 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 1000 V	-	-	-	Chassis, Stud Mount	DO-203AA (DO-4)	-65°C ~ 175°C
UES1302SME3 DIODE GEN PURP 100V 6A B AXIAL Microchip Technology	8,825	RFQ	-	-	B, Axial	Bulk	Active	Standard	100 V	6A	925 mV @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	5 µA @ 100 V	-	-	-	Through Hole	B, Axial	175°C
UES1301SM/TR DIODE GEN PURP 50V 8A D-5B Microchip Technology	6,543	RFQ	-	-	SQ-MELF, E	Tape & Reel (TR)	Active	Standard	50 V	8A	925 mV @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	-	-	-	-	Surface Mount	D-5B	-
UES1302SM/TR DIODE GEN PURP 100V 8A D-5B Microchip Technology	4,241	RFQ	-	-	SQ-MELF, E	Tape & Reel (TR)	Active	Standard	100 V	8A	925 mV @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	-	-	-	-	Surface Mount	D-5B	-
JANTXV1N6642UB2R/TR DIODE GEN PURP 75V 300MA UB2 Microchip Technology	7,579	RFQ	-	-	2-SMD, No Lead	Tape & Reel (TR)	Active	Standard	75 V	300mA	1.2 V @ 100 mA	Fast Recovery =< 500ns, > 200mA (Io)	20 ns	500 nA @ 75 V	-	Military	MIL-PRF-19500/578	Surface Mount	UB2	-65°C ~ 175°C

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