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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
FML-G16S DIODE GEN PURP 600V 5A TO220F-2L Sanken Electric USA Inc.	7,463	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Obsolete	Standard	600 V	5A	1.5 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	100 µA @ 600 V	-	-	-	Through Hole	TO-220F-2L	-40°C ~ 150°C
FML-G22S DIODE GEN PURP 200V 10A TO220F Sanken Electric USA Inc.	3,359	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Obsolete	Standard	200 V	10A	980 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	40 ns	200 µA @ 200 V	-	-	-	Through Hole	TO-220F-2L	-40°C ~ 150°C
FMXA-1104S DIODE GEN PURP 400V 10A TO220F Sanken Electric USA Inc.	8,407	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Obsolete	Standard	400 V	10A	1.5 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	100 µA @ 400 V	-	-	-	Through Hole	TO-220F-2L	-40°C ~ 150°C
FMX-G12S DIODE GEN PURP 200V 5A TO220F-2L Sanken Electric USA Inc.	5,959	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Obsolete	Standard	200 V	5A	980 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	100 µA @ 200 V	-	-	-	Through Hole	TO-220F-2L	-40°C ~ 150°C
FMX-G16S DIODE GEN PURP 600V 5A TO220F-2L Sanken Electric USA Inc.	2,574	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Obsolete	Standard	600 V	5A	1.5 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	50 µA @ 600 V	-	-	-	Through Hole	TO-220F-2L	-40°C ~ 150°C
FMX-G22S DIODE GEN PURP 200V 10A TO220F Sanken Electric USA Inc.	8,993	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Obsolete	Standard	200 V	10A	980 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	200 µA @ 200 V	-	-	-	Through Hole	TO-220F-2L	-40°C ~ 150°C
FMX-G26S DIODE GEN PURP 600V 10A TO220F Sanken Electric USA Inc.	3,244	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Obsolete	Standard	600 V	10A	1.5 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	100 µA @ 600 V	-	-	-	Through Hole	TO-220F-2L	-40°C ~ 150°C
SARS02 DIODE GEN PURP 800V 1.2A AXIAL Sanken Electric USA Inc.	3,241	RFQ	Datasheet	-	Axial	Bulk	Obsolete	Standard	800 V	1.2A	920 mV @ 1.5 A	Standard Recovery >500ns, > 200mA (Io)	18 µs	10 µA @ 800 V	-	-	-	Through Hole	Axial	-40°C ~ 150°C
PMEG2005AEA/DG,115 DIODE SCHOTTKY 20V 500MA SOD323 Nexperia USA Inc.	4,476	RFQ	Datasheet	-	SC-76, SOD-323	Tape & Reel (TR)	Obsolete	Schottky	20 V	500mA	390 mV @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 20 V	80pF @ 1V, 1MHz	-	-	Surface Mount	SOD-323	140°C (Max)
HS183100R DIODE SCHOTTKY 100V 180A HALFPAK Microsemi Corporation	2,655	RFQ	Datasheet	-	HALF-PAK	Bulk	Obsolete	Schottky, Reverse Polarity	100 V	180A	910 mV @ 180 A	Fast Recovery =< 500ns, > 200mA (Io)	-	5 mA @ 100 V	4800pF @ 5V, 1MHz	-	-	Chassis Mount	HALF-PAK	-
APT100DL60BG DIODE GEN PURP 600V 100A TO247 Microchip Technology	5,848	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	600 V	100A	1.6 V @ 100 A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	-	-	Through Hole	TO-247	-55°C ~ 175°C
JANTXV1N6629US DIODE GEN PURP 800V 1.4A D-5B Microsemi Corporation	3,276	RFQ	Datasheet	-	SQ-MELF, E	Bulk	Active	Standard	800 V	1.4A	1.4 V @ 1.4 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	2 µA @ 800 V	40pF @ 10V, 1MHz	Military	MIL-PRF-19500/590	Surface Mount	D-5B	-65°C ~ 150°C
DNA30E2200PC DIODE GEN PURP 2.2KV 30A TO263AA IXYS	4,835	RFQ	-	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	2200 V	30A	1.26 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	40 µA @ 2200 V	7pF @ 700V, 1MHz	-	-	Surface Mount	TO-263AA	-55°C ~ 175°C
DNA30EM2200PC DIODE GEN PURP 2.2KV 30A TO263AA IXYS	4,350	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	2200 V	30A	1.26 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	40 µA @ 2200 V	7pF @ 700V, 1MHz	-	-	Surface Mount	TO-263AA	-55°C ~ 175°C
TRS6E65C,S1AQ DIODE SIL CARB 650V 6A TO220-2L Toshiba Semiconductor and Storage	5,245	RFQ	-	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	6A	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	90 µA @ 650 V	35pF @ 650V, 1MHz	-	-	Through Hole	TO-220-2L	175°C (Max)
TRS12E65C,S1Q DIODE SIL CARB 650V 12A TO220-2L Toshiba Semiconductor and Storage	3,177	RFQ	-	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	12A	1.7 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	90 µA @ 170 V	65pF @ 650V, 1MHz	-	-	Through Hole	TO-220-2L	175°C (Max)
JANTX1N6629US DIODE GEN PURP 880V 1.4A D-5B Microsemi Corporation	6,147	RFQ	Datasheet	-	SQ-MELF, E	Bulk	Active	Standard	880 V	1.4A	1.4 V @ 1.4 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	2 µA @ 880 V	40pF @ 10V, 1MHz	Military	MIL-PRF-19500/590	Surface Mount	D-5B	-65°C ~ 150°C
MSG105 DIODE SCHOTTKY 50V 1A DO204AL Microsemi Corporation	3,206	RFQ	Datasheet	-	DO-204AL, DO-41, Axial	Bulk	Active	Schottky	50 V	1A	690 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 50 V	-	-	-	Through Hole	DO-204AL (DO-41)	-65°C ~ 175°C
MSG109 DIODE SCHOTTKY 90V 1A DO204AL Microsemi Corporation	3,590	RFQ	Datasheet	-	DO-204AL, DO-41, Axial	Bulk	Active	Schottky	90 V	1A	810 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 90 V	-	-	-	Through Hole	DO-204AL (DO-41)	-65°C ~ 175°C
DB3Y501KEL DIODE SCHOTTKY 50V 200MA SOT23-3 Panasonic Electronic Components	6,334	RFQ	Datasheet	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Obsolete	Schottky	50 V	200mA	550 mV @ 200 mA	Small Signal =< 200mA (Io), Any Speed	1.6 ns	200 µA @ 50 V	4pF @ 10V, 1MHz	-	-	Surface Mount	SOT-23-3	125°C (Max)

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