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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
PCFFS3065AF DIODE SIL CARBIDE 650V 30A DIE onsemi	7,920	RFQ	-	-	Die	Tray	Obsolete	SiC (Silicon Carbide) Schottky	650 V	30A	1.75 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	-	-	-	Surface Mount	Die	175°C (Max)
SNRVBA130LNT3G DIODE SCHOTTKY 1A 30V SMA onsemi	9,719	RFQ	-	-	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
SNRVBSS24NT3G DIODE SCHOTTKY 40V 2A SMB onsemi	6,835	RFQ	-	-	DO-214AA, SMB	Tape & Reel (TR)	Obsolete	Schottky	40 V	2A	500 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	400 µA @ 40 V	-	Automotive	AEC-Q101	Surface Mount	SMB	-55°C ~ 150°C
NRVBS230LT3G-VF01 DIODE SCHOTTKY 30V 2A SMB onsemi	3,020	RFQ	-	-	DO-214AA, SMB	Tape & Reel (TR)	Active	Schottky	30 V	2A	500 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 30 V	-	Automotive	AEC-Q101	Surface Mount	SMB	-55°C ~ 125°C
PCFFS2065AF DIODE SIL CARBIDE 650V 20A DIE onsemi	8,596	RFQ	-	-	Die	Tray	Active	SiC (Silicon Carbide) Schottky	650 V	20A	1.75 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	-	-	-	Surface Mount	Die	175°C (Max)
NTS560MFST1G DIODE SCHOTTKY 60V 5A 5DFN onsemi	7,921	RFQ	-	-	8-PowerTDFN, 5 Leads	Tape & Reel (TR)	Obsolete	Schottky	60 V	5A	600 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	55 µA @ 60 V	-	-	-	Surface Mount	5-DFN (5x6) (8-SOFL)	-55°C ~ 150°C
NUR460P/L07112 ULTRAFAST POWER DIODE NXP USA Inc.	3,817	RFQ	Datasheet	-	DO-201AD, Axial	Bulk	Active	Standard	600 V	4A	1.28 V @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	10 µA @ 600 V	-	-	-	Through Hole	DO-201AD	175°C
BAS16 DIODE GEN PURP 75V 215MA SC59-3 Fairchild Semiconductor	9,323	RFQ	Datasheet	-	TO-236-3, SC-59, SOT-23-3	Bulk	Active	Standard	75 V	215mA	1.25 V @ 150 mA	Fast Recovery =< 500ns, > 200mA (Io)	4 ns	100 nA @ 80 V	1.2pF @ 0V, 1MHz	-	-	Surface Mount	SC-59-3	150°C (Max)
RURD4120S9A-SB82080 RECTIFIER, AVALANCHE, 4A, 1200V Fairchild Semiconductor	9,164	RFQ	-	-	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
FM2500W DIODE GEN PURP 2.5KV 150MA SMX Rectron USA	7,853	RFQ	Datasheet	-	DO-214AC, SMA	Tape & Reel (TR)	Active	Standard	2500 V	150mA	2 V @ 150 mA	Small Signal =< 200mA (Io), Any Speed	-	5 µA @ 2500 V	35pF @ 4V, 1MHz	-	-	Surface Mount	SMX	-55°C ~ 150°C
HVP16 DIODE GEN PURP 16000V 750MA HVP Rectron USA	9,771	RFQ	Datasheet	-	Module	Bulk	Active	Standard	16000 V	750mA	14 V @ 750 mA	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 16000 V	-	-	-	Chassis Mount	HVP	-55°C ~ 150°C
RJU1CF02DWA-00#W0 DIODE GEN PURP 1.25KV 25A SMD Renesas Electronics Corporation	7,297	RFQ	-	-	-	Tape & Reel (TR)	Obsolete	Standard	1250 V	25A	2.8 V @ 25 A	Fast Recovery =< 500ns, > 200mA (Io)	130 ns	25 µA @ 1250 V	-	-	-	-	-	175°C (Max)
ON5474J DIODE SCHOTTKY I2PAK Nexperia USA Inc.	5,174	RFQ	-	-	-	Tape & Reel (TR)	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-	-
SFE1J DIODE GP 600V 1A MELF DO-213AB Diotec Semiconductor	9,513	RFQ	Datasheet	-	DO-213AB, MELF	Tape & Reel (TR)	Obsolete	Standard	600 V	1A	1.7 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	5 µA @ 600 V	-	-	-	Surface Mount	DO-213AB (MELF)	-50°C ~ 150°C
SFE1G DIODE SFR MELF 400V 1A Diotec Semiconductor	4,744	RFQ	Datasheet	-	DO-213AB, MELF	Tape & Reel (TR)	Obsolete	Standard	400 V	1A	1.25 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 400 V	-	-	-	Surface Mount	DO-213AB (MELF)	-50°C ~ 150°C
NXPSC16650B6J DIODE SIL CARBIDE 650V 16A D2PAK WeEn Semiconductors	3,106	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	16A	1.7 V @ 16 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	534pF @ 1V, 1MHz	-	-	Surface Mount	D2PAK	175°C (Max)
WNSC04650T6J DIODE SIL CARBIDE 650V 4A 5DFN WeEn Semiconductors	4,442	RFQ	Datasheet	-	4-VSFN Exposed Pad	Tape & Reel (TR)	Obsolete	SiC (Silicon Carbide) Schottky	650 V	4A	1.7 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	25 µA @ 650 V	141pF @ 1V, 1MHz	-	-	Surface Mount	5-DFN (8x8)	175°C (Max)
NXPSC12650B6J DIODE SIL CARBIDE 650V 12A D2PAK WeEn Semiconductors	2,892	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	SiC (Silicon Carbide) Schottky	650 V	12A	1.7 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	80 µA @ 650 V	380pF @ 1V, 1MHz	-	-	Surface Mount	D2PAK	175°C (Max)
WNSC10650T6J DIODE SIL CARBIDE 650V 10A 5DFN WeEn Semiconductors	7,135	RFQ	Datasheet	-	4-VSFN Exposed Pad	Tape & Reel (TR)	Obsolete	SiC (Silicon Carbide) Schottky	650 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 650 V	328pF @ 1V, 1MHz	-	-	Surface Mount	5-DFN (8x8)	175°C (Max)
WNSC08650T6J DIODE SIL CARBIDE 650V 8A 5DFN WeEn Semiconductors	8,999	RFQ	Datasheet	-	4-VSFN Exposed Pad	Tape & Reel (TR)	Obsolete	SiC (Silicon Carbide) Schottky	650 V	8A	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	267pF @ 1V, 1MHz	-	-	Surface Mount	5-DFN (8x8)	175°C (Max)

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