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Single Diodes
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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6A100GHDIODE GEN PURP 1KV 6A R-6 Taiwan Semiconductor Corporation |
6,122 | 0.00 |
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Datasheet |
- | R-6, Axial | Tape & Reel (TR) | Not For New Designs | Standard | 1000 V | 6A | 1 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 1000 V | 60pF @ 4V, 1MHz | Automotive | AEC-Q101 | Through Hole | R-6 | -55°C ~ 150°C |
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6A40GHDIODE GEN PURP 400V 6A R-6 Taiwan Semiconductor Corporation |
3,796 | 0.00 |
|
Datasheet |
- | R-6, Axial | Tape & Reel (TR) | Not For New Designs | Standard | 400 V | 6A | 1 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 400 V | 60pF @ 4V, 1MHz | Automotive | AEC-Q101 | Through Hole | R-6 | -55°C ~ 150°C |
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6A60GHDIODE GEN PURP 600V 6A R-6 Taiwan Semiconductor Corporation |
6,616 | 0.00 |
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Datasheet |
- | R-6, Axial | Tape & Reel (TR) | Not For New Designs | Standard | 600 V | 6A | 1 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 600 V | 60pF @ 4V, 1MHz | Automotive | AEC-Q101 | Through Hole | R-6 | -55°C ~ 150°C |
|
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6A80GHDIODE GEN PURP 800V 6A R-6 Taiwan Semiconductor Corporation |
3,694 | 0.00 |
|
Datasheet |
- | R-6, Axial | Tape & Reel (TR) | Not For New Designs | Standard | 800 V | 6A | 1 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 800 V | 60pF @ 4V, 1MHz | Automotive | AEC-Q101 | Through Hole | R-6 | -55°C ~ 150°C |
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S1DL RVGDIODE GEN PURP 200V 1A SUB SMA Taiwan Semiconductor Corporation |
36 | 0.00 |
|
Datasheet |
- | DO-219AB | Tape & Reel (TR) | Discontinued at Digi-Key | Standard | 200 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 1.8 µs | 5 µA @ 200 V | 9pF @ 4V, 1MHz | - | - | Surface Mount | Sub SMA | -55°C ~ 175°C |
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SS120DIODE SCHOTTKY 200V 1A DO214AC Taiwan Semiconductor Corporation |
2,560 | 0.00 |
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Datasheet |
- | DO-214AC, SMA | Tape & Reel (TR) | Active | Schottky | 200 V | 1A | 950 mV @ 1 A | No Recovery Time > 500mA (Io) | - | 100 µA @ 200 V | 31pF @ 4V, 1MHz | - | - | Surface Mount | DO-214AC (SMA) | -55°C ~ 150°C |
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SK810CHDIODE SCHOTTKY 100V 8A DO214AB Taiwan Semiconductor Corporation |
2,806 | 0.00 |
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Datasheet |
- | DO-214AB, SMC | Tape & Reel (TR) | Active | Schottky | 100 V | 8A | 900 mV @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 100 V | - | Automotive | AEC-Q101 | Surface Mount | DO-214AB (SMC) | -55°C ~ 150°C |
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SS210L RUGDIODE SCHOTTKY 100V 2A SUB SMA Taiwan Semiconductor Corporation |
6,967 | 0.00 |
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Datasheet |
- | DO-219AB | Tape & Reel (TR) | Active | Schottky | 100 V | 2A | 850 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 100 V | - | - | - | Surface Mount | Sub SMA | -55°C ~ 150°C |
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SF62GDIODE GEN PURP 100V 6A DO201AD Taiwan Semiconductor Corporation |
8,546 | 0.00 |
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Datasheet |
- | DO-201AD, Axial | Tape & Reel (TR) | Active | Standard | 100 V | 6A | 975 mV @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 100 V | 100pF @ 4V, 1MHz | - | - | Through Hole | DO-201AD | -55°C ~ 150°C |
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HS5AH50NS, 5A, 50V, HIGH EFFICIENT RE Taiwan Semiconductor Corporation |
4,312 | 0.00 |
|
Datasheet |
- | DO-214AB, SMC | Tape & Reel (TR) | Active | Standard | 50 V | 5A | 1 V @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 50 V | 80pF @ 4V, 1MHz | Automotive | AEC-Q101 | Surface Mount | DO-214AB (SMC) | -55°C ~ 150°C |
