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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
SFAS802G 35NS, 8A, 100V, SUPER FAST RECOV Taiwan Semiconductor Corporation	3,227	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	100 V	8A	950 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 100 V	80pF @ 4V, 1MHz	-	-	Surface Mount	TO-263AB (D2PAK)	-55°C ~ 150°C
HER604G DIODE GEN PURP 300V 6A R-6 Taiwan Semiconductor Corporation	6,444	RFQ	Datasheet	-	R-6, Axial	Tape & Reel (TR)	Not For New Designs	Standard	300 V	6A	1 V @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 300 V	80pF @ 4V, 1MHz	-	-	Through Hole	R-6	-55°C ~ 150°C
HER605G DIODE GEN PURP 400V 6A R-6 Taiwan Semiconductor Corporation	4,541	RFQ	Datasheet	-	R-6, Axial	Tape & Reel (TR)	Not For New Designs	Standard	400 V	6A	1.3 V @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 400 V	80pF @ 4V, 1MHz	-	-	Through Hole	R-6	-55°C ~ 150°C
HER606G DIODE GEN PURP 600V 6A R-6 Taiwan Semiconductor Corporation	9,373	RFQ	Datasheet	-	R-6, Axial	Tape & Reel (TR)	Not For New Designs	Standard	600 V	6A	1.7 V @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	10 µA @ 600 V	65pF @ 4V, 1MHz	-	-	Through Hole	R-6	-55°C ~ 150°C
HER603G DIODE GEN PURP 200V 6A R-6 Taiwan Semiconductor Corporation	7,242	RFQ	Datasheet	-	R-6, Axial	Tape & Reel (TR)	Not For New Designs	Standard	200 V	6A	1 V @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 200 V	80pF @ 4V, 1MHz	-	-	Through Hole	R-6	-55°C ~ 150°C
SRA890H 8A, 90V, PLANAR SCHOTTKY Taiwan Semiconductor Corporation	4,076	RFQ	-	-	TO-220-2	Tube	Active	Schottky	90 V	8A	850 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 90 V	-	Automotive	AEC-Q101	Through Hole	TO-220AC	-55°C ~ 150°C
SRA890 8A, 90V, PLANAR SCHOTTKY Taiwan Semiconductor Corporation	3,214	RFQ	Datasheet	-	TO-220-2	Tube	Active	Schottky	90 V	8A	850 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 90 V	-	-	-	Through Hole	TO-220AC	-55°C ~ 150°C
SRA8100 8A, 100V, PLANAR SCHOTTKY Taiwan Semiconductor Corporation	9,841	RFQ	Datasheet	-	TO-220-2	Tube	Active	Schottky	100 V	8A	550 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 100 V	-	-	-	Through Hole	TO-220AC	-55°C ~ 150°C
SRA8100H 8A, 100V, PLANAR SCHOTTKY Taiwan Semiconductor Corporation	5,563	RFQ	-	-	TO-220-2	Tube	Active	Schottky	100 V	8A	850 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 100 V	-	Automotive	AEC-Q101	Through Hole	TO-220AC	-55°C ~ 150°C
SFA807G 35NS, 8A, 500V, SUPER FAST RECOV Taiwan Semiconductor Corporation	7,376	RFQ	Datasheet	-	TO-220-2	Tube	Active	Standard	500 V	8A	1.7 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 500 V	60pF @ 4V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 150°C

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