Single Diodes
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SFT11G A1GDIODE GEN PURP 50V 1A TS-1 Taiwan Semiconductor Corporation |
3,446 | 0.00 |
|
Datasheet |
- | T-18, Axial | Tape & Box (TB) | Discontinued at Digi-Key | Standard | 50 V | 1A | 950 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 50 V | 20pF @ 4V, 1MHz | - | - | Through Hole | TS-1 | -55°C ~ 150°C |
|
SFT11GHA1GDIODE GEN PURP 50V 1A TS-1 Taiwan Semiconductor Corporation |
2,051 | 0.00 |
|
Datasheet |
- | T-18, Axial | Tape & Box (TB) | Discontinued at Digi-Key | Standard | 50 V | 1A | 950 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 50 V | 20pF @ 4V, 1MHz | Automotive | AEC-Q101 | Through Hole | TS-1 | -55°C ~ 150°C |
|
SFT12G A1GDIODE GEN PURP 100V 1A TS-1 Taiwan Semiconductor Corporation |
5,916 | 0.00 |
|
Datasheet |
- | T-18, Axial | Tape & Box (TB) | Discontinued at Digi-Key | Standard | 100 V | 1A | 950 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 100 V | 20pF @ 4V, 1MHz | - | - | Through Hole | TS-1 | -55°C ~ 150°C |
|
SFT12GHA1GDIODE GEN PURP 100V 1A TS-1 Taiwan Semiconductor Corporation |
5,427 | 0.00 |
|
Datasheet |
- | T-18, Axial | Tape & Box (TB) | Discontinued at Digi-Key | Standard | 100 V | 1A | 950 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 100 V | 20pF @ 4V, 1MHz | Automotive | AEC-Q101 | Through Hole | TS-1 | -55°C ~ 150°C |
|
SFT13G A1GDIODE GEN PURP 150V 1A TS-1 Taiwan Semiconductor Corporation |
7,389 | 0.00 |
|
Datasheet |
- | T-18, Axial | Tape & Box (TB) | Discontinued at Digi-Key | Standard | 150 V | 1A | 950 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 150 V | 20pF @ 4V, 1MHz | - | - | Through Hole | TS-1 | -55°C ~ 150°C |
|
SFT13GHA1GDIODE GEN PURP 150V 1A TS-1 Taiwan Semiconductor Corporation |
2,666 | 0.00 |
|
Datasheet |
- | T-18, Axial | Tape & Box (TB) | Discontinued at Digi-Key | Standard | 150 V | 1A | 950 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 150 V | 20pF @ 4V, 1MHz | Automotive | AEC-Q101 | Through Hole | TS-1 | -55°C ~ 150°C |
|
SFT14G A1GDIODE GEN PURP 200V 1A TS-1 Taiwan Semiconductor Corporation |
5,161 | 0.00 |
|
Datasheet |
- | T-18, Axial | Tape & Box (TB) | Discontinued at Digi-Key | Standard | 200 V | 1A | 950 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 200 V | 20pF @ 4V, 1MHz | - | - | Through Hole | TS-1 | -55°C ~ 150°C |
|
SFT14GHA1GDIODE GEN PURP 200V 1A TS-1 Taiwan Semiconductor Corporation |
7,807 | 0.00 |
|
Datasheet |
- | T-18, Axial | Tape & Box (TB) | Discontinued at Digi-Key | Standard | 200 V | 1A | 950 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 200 V | 20pF @ 4V, 1MHz | Automotive | AEC-Q101 | Through Hole | TS-1 | -55°C ~ 150°C |
|
SFT15G A1GDIODE GEN PURP 300V 1A TS-1 Taiwan Semiconductor Corporation |
5,554 | 0.00 |
|
Datasheet |
- | T-18, Axial | Tape & Box (TB) | Discontinued at Digi-Key | Standard | 300 V | 1A | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 300 V | 10pF @ 4V, 1MHz | - | - | Through Hole | TS-1 | -55°C ~ 150°C |
|
SFT15GHA1GDIODE GEN PURP 300V 1A TS-1 Taiwan Semiconductor Corporation |
2,349 | 0.00 |
|
Datasheet |
- | T-18, Axial | Tape & Box (TB) | Discontinued at Digi-Key | Standard | 300 V | 1A | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 300 V | 10pF @ 4V, 1MHz | Automotive | AEC-Q101 | Through Hole | TS-1 | -55°C ~ 150°C |
