Single Diodes
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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1N4006GR0DIODE GEN PURP 800V 1A DO204AL Taiwan Semiconductor Corporation |
9,324 | 0.00 |
|
Datasheet |
- | DO-204AL, DO-41, Axial | Tape & Reel (TR) | Active | Standard | 800 V | 1A | 1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 800 V | 10pF @ 4V, 1MHz | - | - | Through Hole | DO-204AL (DO-41) | -55°C ~ 150°C |
|
S1GLR2GDIODE GEN PURP 400V 1A SUB SMA Taiwan Semiconductor Corporation |
7,463 | 0.00 |
|
Datasheet |
- | DO-219AB | Tape & Reel (TR) | Discontinued at Digi-Key | Standard | 400 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 1.8 µs | 5 µA @ 400 V | 9pF @ 4V, 1MHz | - | - | Surface Mount | Sub SMA | -55°C ~ 175°C |
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S1JR2DIODE GEN PURP 600V 1A DO214AC Taiwan Semiconductor Corporation |
7,340 | 0.00 |
|
- |
- | DO-214AC, SMA | Tape & Reel (TR) | Active | Standard | 600 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 1 µA @ 600 V | 12pF @ 4V, 1MHz | - | - | Surface Mount | DO-214AC (SMA) | -55°C ~ 175°C |
|
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S1JR3DIODE GEN PURP 600V 1A DO214AC Taiwan Semiconductor Corporation |
4,315 | 0.00 |
|
- |
- | DO-214AC, SMA | Tape & Reel (TR) | Active | Standard | 600 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 1 µA @ 600 V | 12pF @ 4V, 1MHz | - | - | Surface Mount | DO-214AC (SMA) | -55°C ~ 175°C |
|
S1JLR2GDIODE GEN PURP 600V 1A SUB SMA Taiwan Semiconductor Corporation |
5,553 | 0.00 |
|
Datasheet |
- | DO-219AB | Tape & Reel (TR) | Active | Standard | 600 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 1.8 µs | 5 µA @ 600 V | 9pF @ 4V, 1MHz | - | - | Surface Mount | Sub SMA | -55°C ~ 175°C |
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S1MR2DIODE GEN PURP 1KV 1A DO214AC Taiwan Semiconductor Corporation |
4,821 | 0.00 |
|
- |
- | DO-214AC, SMA | Tape & Reel (TR) | Active | Standard | 1000 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 1 µA @ 1000 V | 12pF @ 4V, 1MHz | - | - | Surface Mount | DO-214AC (SMA) | -55°C ~ 175°C |
|
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S1MR3DIODE GEN PURP 1KV 1A DO214AC Taiwan Semiconductor Corporation |
5,447 | 0.00 |
|
- |
- | DO-214AC, SMA | Tape & Reel (TR) | Active | Standard | 1000 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 1 µA @ 1000 V | 12pF @ 4V, 1MHz | - | - | Surface Mount | DO-214AC (SMA) | -55°C ~ 175°C |
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LSR105-J0 L0DIODE SCHOTTKY 50V 1A MELF Taiwan Semiconductor Corporation |
3,435 | 0.00 |
|
- |
- | DO-213AB, MELF | Tape & Reel (TR) | Obsolete | Schottky | 50 V | 1A | 700 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 50 V | 80pF @ 4V, 1MHz | - | - | Surface Mount | MELF | -65°C ~ 150°C |
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LL5818 L0DIODE SCHOTTKY 30V 1A MELF Taiwan Semiconductor Corporation |
3,740 | 0.00 |
|
- |
- | DO-213AB, MELF | Tape & Reel (TR) | Obsolete | Schottky | 30 V | 1A | 550 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 30 V | 110pF @ 4V, 1MHz | - | - | Surface Mount | MELF | -65°C ~ 125°C |
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LSR104 L0DIODE SCHOTTKY 40V 1A MELF Taiwan Semiconductor Corporation |
6,396 | 0.00 |
|
- |
- | DO-213AB, MELF | Tape & Reel (TR) | Obsolete | Schottky | 40 V | 1A | 550 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 40 V | 110pF @ 4V, 1MHz | - | - | Surface Mount | MELF | -65°C ~ 125°C |
