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Single Diodes
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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40SQ04540A AXIAL LEADED SCHOTTKY DIODES ANBON SEMICONDUCTOR (INT'L) LIMITED |
2,768 | 0.00 |
|
Datasheet |
- | Axial | Tape & Reel (TR) | Active | Schottky | 45 V | 40A | 550 mV @ 40 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 45 V | - | - | - | Through Hole | Axial | -55°C ~ 200°C |
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|
AS3D020065A650V,20A SILICON CARBIDE SCHOTTK ANBON SEMICONDUCTOR (INT'L) LIMITED |
137 | 0.00 |
|
Datasheet |
- | TO-220-2 | Bulk | Active | SiC (Silicon Carbide) Schottky | 650 V | 56A | 1.65 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 650 V | 1190pF @ 0V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
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ASZD020120C1200V,20A SILICON CARBIDE SCHOTT ANBON SEMICONDUCTOR (INT'L) LIMITED |
30 | 0.00 |
|
- |
* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
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|
AS4D040120P21200V,40A SILICON CARBIDE SCHOTT ANBON SEMICONDUCTOR (INT'L) LIMITED |
30 | 0.00 |
|
- |
* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
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AS3D030065C650V,30A SILICON CARBIDE SCHOTTK ANBON SEMICONDUCTOR (INT'L) LIMITED |
30 | 0.00 |
|
Datasheet |
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 35A | 1.8 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 650 V | 1805pF @ 0V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
