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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
BSDH06G65E2 DIODE SCHOT SIC 650V 6A TO220-2 Bourns Inc.	3,000	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	6A	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	30 µA @ 650 V	201pF @ 1V, 1MHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
BSDH10G65E2 DIODE SIC 650V 10A TO220-2 Bourns Inc.	2,873	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.7 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 650 V	323pF @ 1V, 1MHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
BSDH08G65E2 DIODE SCHOT SIC 650V 8A TO220-2 Bourns Inc.	3,000	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	267pF @ 1V, 1MHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
BSDD06G65E2 DIODE SIC 650V 6A TO252 Bourns Inc.	4,963	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	6A	1.7 V @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	-	30 µA @ 650 V	201pF @ 1V, 1MHz	-	-	Surface Mount	TO-252 (DPAK)	-55°C ~ 175°C
BSDD08G65E2 DIODE SCHOT SIC 650V 8A TO252 Bourns Inc.	5,000	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	267pF @ 1V, 1MHz	-	-	Surface Mount	TO-252 (DPAK)	-55°C ~ 175°C
BSDD05G120E2 DIODE SCHOT SIC 1200V 5A TO252 Bourns Inc.	4,994	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	5A	1.6 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	25 µA @ 1200 V	260pF @ 1V, 1MHz	-	-	Surface Mount	TO-252 (DPAK)	-55°C ~ 175°C
BSDH10S65E6 DIODE SCHOT SIC 650V 10A TO220-2 Bourns Inc.	2,966	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.45 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	500pF @ 1V, 1MHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
BSDD10G65E2 DIODE SCHOT SIC 650V 10A TO252 Bourns Inc.	9,660	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	323pF @ 1V, 1MHz	-	-	Surface Mount	TO-252 (DPAK)	-55°C ~ 175°C
BSDH10G120E2 DIODE SIC 1200V 10A TO220-2 Bourns Inc.	2,929	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	10A	1.6 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 1200 V	481pF @ 1V, 1MHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
BSDD10S65E6 DIODE SCHOT SIC 650V 10A TO252 Bourns Inc.	4,995	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.45 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	500pF @ 1V, 1MHz	-	-	Surface Mount	TO-252 (DPAK)	-55°C ~ 175°C

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