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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
TPM2840-01 SILICON SCHOTTKY DIODE. HAVE GOO DNmicron	16,000	RFQ	Datasheet	-	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
TPM2850-01 SILICON SCHOTTKY DIODE. HAVE GOO DNmicron	16,000	RFQ	Datasheet	-	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
TPM2841-03 SILICON SCHOTTKY DIODE. HAVE GOO DNmicron	6,000	RFQ	Datasheet	-	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
BYC10DX-600,127 DIODE GEN PURP 500V 10A TO220FP WeEn Semiconductors	5,465	RFQ	Datasheet	-	TO-220-2 Full Pack, Isolated Tab	Tube	Active	Standard	500 V	10A	2.5 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	18 ns	200 µA @ 600 V	-	-	-	Through Hole	TO-220FP	150°C (Max)
MUR340SB R5G DIODE GEN PURP 400V 3A DO214AA Taiwan Semiconductor Corporation	3,524	RFQ	-	-	DO-214AA, SMB	Tape & Reel (TR)	Discontinued at Digi-Key	Standard	400 V	3A	1.25 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 400 V	40pF @ 4V, 1MHz	-	-	Surface Mount	DO-214AA (SMB)	-55°C ~ 175°C
BYC15-1200PQ DIODE GEN PURP 1.2KV 15A TO220AC WeEn Semiconductors	11,837	RFQ	Datasheet	-	TO-220-2	Bulk	Active	Standard	1200 V	15A	3.2 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	61 ns	100 µA @ 1200 V	-	-	-	Through Hole	TO-220AC	175°C (Max)
TSP12U120S DIODE SCHOTTKY 120V 12A TO277A Taiwan Semiconductor Corporation	2,291	RFQ	-	-	TO-277, 3-PowerDFN	Tape & Reel (TR)	Obsolete	Schottky	120 V	12A	780 mV @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 120 V	-	-	-	Surface Mount	TO-277A (SMPC)	-55°C ~ 150°C
SARS01V0 DIODE GEN PURP 800V 1.2A AXIAL Sanken Electric USA Inc.	1,643	RFQ	Datasheet	-	Axial	Cut Tape (CT)	Active	Standard	800 V	1.2A	920 mV @ 1.2 A	Standard Recovery >500ns, > 200mA (Io)	18 µs	10 µA @ 800 V	-	-	-	Through Hole	Axial	-40°C ~ 150°C
MUR1560 RECTIFIER, ULTRA-FAST/HIGH EFFIC Good-Ark Semiconductor	842	RFQ	Datasheet	-	TO-220-2	Tube	Active	Standard	600 V	15A	1.9 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 600 V	-	-	-	Through Hole	TO-220AC	-55°C ~ 150°C
RHRP8120S2536 RECTIFIER, AVALANCHE, 2 CHANNEL, Harris Corporation	700	RFQ	-	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
STR10100LYD_L2_00001 100V ,SCHOTTKY,TO-252AA,10A Panjit International Inc.	2,995	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Discontinued at Digi-Key	Schottky	100 V	10A	750 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 100 V	560pF @ 4V, 1MHz	-	-	Surface Mount	TO-252AA	-55°C ~ 150°C
MBR10150_T0_00001 10 AMPERES SCHOTTKY BARRIER RECT Panjit International Inc.	1,944	RFQ	Datasheet	-	TO-220-2	Tube	Active	Schottky	150 V	10A	900 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 150 V	-	-	-	Through Hole	TO-220AC	-65°C ~ 175°C
S5A V7G DIODE GEN PURP 50V 5A DO214AB Taiwan Semiconductor Corporation	1,513	RFQ	Datasheet	-	DO-214AB, SMC	Cut Tape (CT)	Discontinued at Digi-Key	Standard	50 V	5A	1.15 V @ 5 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	10 µA @ 50 V	60pF @ 4V, 1MHz	-	-	Surface Mount	DO-214AB (SMC)	-55°C ~ 150°C
GE1104 DIODE GEN PURP 200V 2.5A DO204 Harris Corporation	959	RFQ	Datasheet	-	DO-204, Axial	Bulk	Active	Standard	200 V	2.5A	950 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	2 µA @ 200 V	45pF @ 4V, 1MHz	-	-	Through Hole	DO-204	-65°C ~ 175°C
IDD03SG60CXTMA1 DIODE SIL CARB 600V 3A TO252-3 Infineon Technologies	2,889	RFQ	Datasheet	CoolSiC™+	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Discontinued at Digi-Key	SiC (Silicon Carbide) Schottky	600 V	3A	2.3 V @ 3 A	No Recovery Time > 500mA (Io)	0 ns	15 µA @ 600 V	60pF @ 1V, 1MHz	-	-	Surface Mount	PG-TO252-3	-55°C ~ 175°C
FDH300_Q DIODE 125V 0.2A 2-PIN DO-35 T/R Fairchild Semiconductor	2,000	RFQ	Datasheet	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
TPAR3J S1G DIODE AVALANCHE 600V 3A TO277A Taiwan Semiconductor Corporation	103	RFQ	-	-	TO-277, 3-PowerDFN	Tape & Reel (TR)	Active	Avalanche	600 V	3A	1.55 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	120 ns	10 µA @ 600 V	58pF @ 4V, 1MHz	-	-	Surface Mount	TO-277A (SMPC)	-55°C ~ 175°C
MSRF860G DIODE GEN PURP 600V 8A TO220FP onsemi	2,644	RFQ	Datasheet	SWITCHMODE™	TO-220-2 Full Pack	Bulk	Obsolete	Standard	600 V	8A	1.7 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	120 ns	10 µA @ 600 V	-	-	-	Through Hole	TO-220FP	-65°C ~ 150°C
BYV25FD-600,118 DIODE GEN PURP 600V 5A DPAK WeEn Semiconductors	8,191	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	Standard	600 V	5A	1.9 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	50 µA @ 600 V	-	-	-	Surface Mount	DPAK	150°C (Max)
BYV10ED-600PJ DIODE GEN PURP 600V 10A DPAK WeEn Semiconductors	4,562	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	Standard	600 V	10A	2 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 600 V	-	-	-	Surface Mount	DPAK	175°C (Max)

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