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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
DHG20I600PA DIODE GEN PURP 600V 20A TO220AC IXYS	47	RFQ	Datasheet	-	TO-220-2	Tube	Active	Standard	600 V	20A	2.32 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	30 µA @ 600 V	-	-	-	Through Hole	TO-220AC	-55°C ~ 150°C
DSEI25-06AS-TUB DIODE GEN PURP 600V 25A TO263 IXYS	100	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	Standard	600 V	25A	1.31 V @ 25 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	100 µA @ 600 V	20pF @ 400V, 1MHz	-	-	Surface Mount	TO-263 (D2PAK)	-40°C ~ 150°C
VS-25FR20 DIODE GEN PURP 200V 25A DO203AA Vishay General Semiconductor - Diodes Division	85	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard, Reverse Polarity	200 V	25A	1.3 V @ 78 A	Standard Recovery >500ns, > 200mA (Io)	-	12 mA @ 200 V	-	-	-	Chassis, Stud Mount	DO-203AA (DO-4)	-65°C ~ 175°C
DSEP30-06B DIODE GP 600V 30A ISOPLUS247 IXYS	29	RFQ	Datasheet	HiPerFRED™	ISOPLUS247™	Tube	Active	Standard	600 V	30A	2.51 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	250 µA @ 600 V	-	-	-	Through Hole	ISOPLUS247™ (BR)	-55°C ~ 175°C
S3D20065D1 DIODE SIL CARB 650V 20A TO247AD SMC Diode Solutions	50	RFQ	Datasheet	-	TO-247-3	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	20A	1.8 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 650 V	1190pF @ 0V, 1MHz	-	-	Through Hole	TO-247AD	-55°C ~ 175°C
VS-25F20 DIODE GEN PURP 200V 25A DO203AA Vishay General Semiconductor - Diodes Division	88	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard	200 V	25A	1.3 V @ 78 A	Standard Recovery >500ns, > 200mA (Io)	-	12 mA @ 200 V	-	-	-	Chassis, Stud Mount	DO-203AA (DO-4)	-65°C ~ 175°C
1N5818-1 DIODE SCHOTTKY 30V 1A DO41 Microchip Technology	91	RFQ	Datasheet	-	DO-204AL, DO-41, Axial	Bulk	Active	Schottky	30 V	1A	600 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 30 V	-	-	-	Through Hole	DO-204AL (DO-41)	-65°C ~ 150°C
VS-12FR80 DIODE GEN PURP 800V 12A DO203AA Vishay General Semiconductor - Diodes Division	98	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard, Reverse Polarity	800 V	12A	1.26 V @ 38 A	Standard Recovery >500ns, > 200mA (Io)	-	12 mA @ 800 V	-	-	-	Chassis, Stud Mount	DO-203AA (DO-4)	-65°C ~ 175°C
VS-25FR60 DIODE GEN PURP 600V 25A DO203AA Vishay General Semiconductor - Diodes Division	96	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard, Reverse Polarity	600 V	25A	1.3 V @ 78 A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	-	-	Chassis, Stud Mount	DO-203AA (DO-4)	-65°C ~ 175°C
DPG60I300HA DIODE GEN PURP 300V 60A TO247 IXYS	30	RFQ	Datasheet	HiPerFRED™	TO-247-2	Tube	Active	Standard	300 V	60A	1.4 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	1 µA @ 300 V	-	-	-	Through Hole	TO-247	-55°C ~ 175°C
VS-1N1200A DIODE GEN PURP 100V 12A DO203AA Vishay General Semiconductor - Diodes Division	88	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard	100 V	12A	1.35 V @ 12 A	Standard Recovery >500ns, > 200mA (Io)	-	2.5 mA @ 100 V	-	-	-	Chassis, Stud Mount	DO-203AA (DO-4)	-65°C ~ 200°C
VS-16F80 DIODE GEN PURP 800V 16A DO203AA Vishay General Semiconductor - Diodes Division	70	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard	800 V	16A	1.23 V @ 50 A	Standard Recovery >500ns, > 200mA (Io)	-	12 mA @ 800 V	-	-	-	Chassis, Stud Mount	DO-203AA (DO-4)	-65°C ~ 175°C
VS-25FR80 DIODE GEN PURP 800V 25A DO203AA Vishay General Semiconductor - Diodes Division	100	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard, Reverse Polarity	800 V	25A	1.3 V @ 78 A	Standard Recovery >500ns, > 200mA (Io)	-	12 mA @ 800 V	-	-	-	Chassis, Stud Mount	DO-203AA (DO-4)	-65°C ~ 175°C
S12B DIODE GEN PURP 100V 12A DO4 GeneSiC Semiconductor	69	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard	100 V	12A	1.1 V @ 12 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 50 V	-	-	-	Chassis, Stud Mount	DO-4	-65°C ~ 175°C
VS-65APF06LHM3 DIODE GEN PURP 600V 65A TO247AD Vishay General Semiconductor - Diodes Division	71	RFQ	Datasheet	-	TO-3P-3, SC-65-3	Tube	Active	Standard	600 V	65A	1.32 V @ 65 A	Fast Recovery =< 500ns, > 200mA (Io)	180 ns	100 µA @ 600 V	-	Automotive	AEC-Q101	Through Hole	TO-247AD (TO-3P)	-40°C ~ 150°C
1N5616US DIODE GEN PURP 400V 1A D-5A Microchip Technology	92	RFQ	Datasheet	-	SQ-MELF, A	Bulk	Active	Standard	400 V	1A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	500 nA @ 400 V	-	-	-	Surface Mount	D-5A	-65°C ~ 200°C
DSC05120 DIODE SIL CARB 1.2KV 5A TO220AC Diodes Incorporated	50	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	5A	1.7 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	190 µA @ 1200 V	310pF @ 100mV, 1MHz	-	-	Through Hole	TO220AC (Type WX)	-55°C ~ 175°C
DSI45-16AR DIODE GP 1.6KV 48A ISOPLUS247 IXYS	54	RFQ	Datasheet	-	TO-247-3	Tube	Active	Standard	1600 V	48A	1.18 V @ 40 A	Standard Recovery >500ns, > 200mA (Io)	-	3 mA @ 1600 V	-	-	-	Through Hole	ISOPLUS247™	-40°C ~ 175°C
DLA60I1200HA DIODE GEN PURP 1.2KV 60A TO247AD IXYS	40	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1200 V	60A	1.19 V @ 60 A	Standard Recovery >500ns, > 200mA (Io)	-	30 µA @ 1200 V	33pF @ 400V, 1MHz	-	-	Through Hole	TO-247AD	-55°C ~ 175°C
1N3879 DIODE GEN PURP 50V 6A DO4 GeneSiC Semiconductor	59	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard	50 V	6A	1.4 V @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	15 µA @ 50 V	-	-	-	Chassis, Stud Mount	DO-4	-65°C ~ 150°C

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