Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
VS-APH3006-N3 DIODE GP 600V 30A TO247AC Vishay General Semiconductor - Diodes Division	2,985	RFQ	Datasheet	FRED Pt®	TO-247-3	Tube	Active	Standard	600 V	30A	2.65 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	26 ns	30 µA @ 600 V	-	-	-	Through Hole	TO-247AC	-55°C ~ 175°C
SCS212AGC17 DIODE SIC 650V 12A TO220ACFP Rohm Semiconductor	4,198	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	12A	1.55 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	240 µA @ 600 V	438pF @ 1V, 1MHz	-	-	Through Hole	TO-220ACFP	175°C
GP3D015A120A DIODE SIL CARB 1.2KV 15A TO220-2 SemiQ	10	RFQ	Datasheet	Amp+™	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	15A	1.6 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	30 µA @ 1200 V	962pF @ 1V, 1MHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
DSC05120FP DIODE SIL CARB 1.2KV 5A ITO220AC Diodes Incorporated	2,034	RFQ	Datasheet	-	TO-220-2 Full Pack, Isolated Tab	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	5A	1.7 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	190 µA @ 1200 V	318pF @ 100mV, 1MHz	-	-	Through Hole	ITO-220AC (Type WX)	-55°C ~ 175°C
STTH3006DPI DIODE GEN PURP 600V 30A DOP3I STMicroelectronics	3,576	RFQ	Datasheet	-	DOP3I-2 Insulated (Straight Leads)	Tube	Active	Standard	600 V	30A	3.6 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	45 ns	40 µA @ 600 V	-	-	-	Through Hole	DOP3I	150°C (Max)
STPSC20065W DIODE SIL CARBIDE 650V 20A DO247 STMicroelectronics	9,781	RFQ	Datasheet	ECOPACK®2	DO-247-2 (Straight Leads)	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	20A	1.45 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	300 µA @ 650 V	1250pF @ 0V, 1MHz	-	-	Through Hole	DO-247	-40°C ~ 175°C
DSEI30-10AR DIODE GP 1KV 30A ISOPLUS247 IXYS	4,177	RFQ	Datasheet	-	ISOPLUS247™	Tube	Active	Standard	1000 V	30A	2.4 V @ 36 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	750 µA @ 1000 V	-	-	-	Through Hole	ISOPLUS247™ (BR)	-40°C ~ 150°C
1N6622US DIODE GEN PURP 660V 1.2A A-MELF Microchip Technology	5,542	RFQ	Datasheet	-	SQ-MELF, A	Bulk	Active	Standard	660 V	1.2A	1.4 V @ 1.2 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	500 nA @ 660 V	10pF @ 10V, 1MHz	-	-	Surface Mount	A-MELF	-65°C ~ 150°C
DSEP60-12AZ-TUB DIODE GEN PURP 1.2KV 60A TO268AA IXYS	15	RFQ	Datasheet	-	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	Standard	1200 V	60A	2.66 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	80 ns	650 µA @ 1200 V	30pF @ 600V, 1MHz	-	-	Surface Mount	TO-268AA (D3Pak-HV)	-55°C ~ 175°C
SICR20650WT DIODE SCHOTTKY 650V 10A TO247AD SMC Diode Solutions	14	RFQ	Datasheet	-	TO-247-3	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.7 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	150 µA @ 650 V	650pF @ 0V, 1MHz	-	-	Through Hole	TO-247AD	-55°C ~ 175°C
KSF30F60B DIODE GEN PURP 600V 30A TO247 KYOCERA AVX	5,179	RFQ	Datasheet	-	TO-247-3	Tube	Active	Standard	600 V	30A	1.7 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	50 µA @ 600 V	-	-	-	Through Hole	TO-247	-55°C ~ 175°C
1N3892R DIODE GEN PURP REV 400V 12A DO4 GeneSiC Semiconductor	7,271	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard, Reverse Polarity	400 V	12A	1.4 V @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	25 µA @ 50 V	-	-	-	Chassis, Stud Mount	DO-4	-65°C ~ 150°C
1N3893R DIODE GEN PURP REV 600V 12A DO4 GeneSiC Semiconductor	2,816	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard, Reverse Polarity	600 V	12A	1.4 V @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	25 µA @ 50 V	-	-	-	Chassis, Stud Mount	DO-4	-65°C ~ 150°C
1N3210 DIODE GEN PURP 200V 15A DO203AB GeneSiC Semiconductor	3	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard	200 V	15A	1.5 V @ 15 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 50 V	-	-	-	Stud Mount	DO-203AB (DO-5)	-65°C ~ 175°C
1N3214 DIODE GEN PURP 600V 15A DO5 GeneSiC Semiconductor	6,268	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard	600 V	15A	1.5 V @ 15 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 50 V	-	-	-	Chassis, Stud Mount	DO-5	-65°C ~ 175°C
VS-16FR80M DIODE GP REV 800V 16A DO203AA Vishay General Semiconductor - Diodes Division	4,894	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Box	Active	Standard, Reverse Polarity	800 V	16A	1.23 V @ 50 A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	-	-	Chassis, Stud Mount	DO-203AA (DO-4)	-65°C ~ 175°C
C4D15120A DIODE SIL CARB 1.2KV 43.5A TO220 Wolfspeed, Inc.	3,666	RFQ	Datasheet	Z-Rec®	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	43.5A	1.8 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	1200pF @ 0V, 1MHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
SICR40650WT DIODE SCHOTTKY 650V 20A TO247AD SMC Diode Solutions	12	RFQ	Datasheet	-	TO-247-3	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	20A	2 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	300 µA @ 650 V	650pF @ 0V, 1MHz	-	-	Through Hole	TO-247AD	-55°C ~ 175°C
S85J DIODE GEN PURP 600V 85A DO5 GeneSiC Semiconductor	9,647	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard	600 V	85A	1.1 V @ 85 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 100 V	-	-	-	Chassis, Stud Mount	DO-5	-65°C ~ 180°C
S85VR DIODE GEN PURP REV 1.4KV 85A DO5 GeneSiC Semiconductor	3,238	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard, Reverse Polarity	1400 V	85A	1.1 V @ 85 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 100 V	-	-	-	Chassis, Stud Mount	DO-5	-65°C ~ 150°C

Total 95236 Record«Prev 1... 856 857 858 859860861 862 863...4762 Next»

PRODUCT

PHONE

USER