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Home > Products  > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

FET, MOSFET Arrays

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Configuration FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Power - Max Operating Temperature Grade Qualification Mounting Type Supplier Device Package
ALD1101SAL

ALD1101SAL

MOSFET 2N-CH 10.6V 8SOIC

Advanced Linear Devices Inc.

 2,230 0.00
RFQ
ALD1101SAL

Datasheet

 		- 8-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair - 10.6V - 75Ohm @ 5V 1V @ 10µA - - 500mW 0°C ~ 70°C (TJ) - - Surface Mount 8-SOIC
ALD114835SCL

ALD114835SCL

MOSFET 4N-CH 10.6V 16SOIC

Advanced Linear Devices Inc.

 8,147 0.00
RFQ
ALD114835SCL

Datasheet

 		EPAD® 16-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair Depletion Mode 10.6V 12mA, 3mA 540Ohm @ 0V 3.45V @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 16-SOIC
SQUN702E-T1_GE3

SQUN702E-T1_GE3

MOSFET N/P-CH 40V/200V 30A DIE

Vishay Siliconix

 8,047 0.00
RFQ
SQUN702E-T1_GE3

Datasheet

 		TrenchFET® Die Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel, Common Drain - 40V, 200V 30A (Tc), 20A (Tc) 9.2mOhm @ 9.8A, 10V, 60mOhm @ 5A, 10V, 30mOhm @ 6A, 10V 2.5V @ 250µA, 3.5V @ 250µA 23nC @ 20V, 14nC @ 20V, 30.2nC @ 100V 1474pF @ 20V, 1450pF @ 20V, 1302pF @ 100V 48W (Tc), 60W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank Die
ALD212900APAL

ALD212900APAL

MOSFET 2N-CH 10.6V 0.08A 8PDIP

Advanced Linear Devices Inc.

 5,792 0.00
RFQ
ALD212900APAL

Datasheet

 		EPAD®, Zero Threshold™ 8-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair Logic Level Gate 10.6V 80mA 14Ohm 10mV @ 20µA - 30pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 8-PDIP
ALD1102ASAL

ALD1102ASAL

MOSFET 2P-CH 10.6V 8SOIC

Advanced Linear Devices Inc.

 2,822 0.00
RFQ
ALD1102ASAL

Datasheet

 		- 8-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Matched Pair - 10.6V - 270Ohm @ 5V 1.2V @ 10µA - - 500mW 0°C ~ 70°C (TJ) - - Surface Mount 8-SOIC
ALD110814SCL

ALD110814SCL

MOSFET 4N-CH 10.6V 16SOIC

Advanced Linear Devices Inc.

 4 0.00
RFQ
ALD110814SCL

Datasheet

 		EPAD® 16-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair - 10.6V 12mA, 3mA 500Ohm @ 5.4V 1.42V @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 16-SOIC
ALD110900PAL

ALD110900PAL

MOSFET 2N-CH 10.6V 8PDIP

Advanced Linear Devices Inc.

 2,732 0.00
RFQ
ALD110900PAL

Datasheet

 		EPAD®, Zero Threshold™ 8-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair - 10.6V - 500Ohm @ 4V 20mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 8-PDIP
ALD210800ASCL

ALD210800ASCL

MOSFET 4N-CH 10.6V 0.08A 16SOIC

Advanced Linear Devices Inc.

 3,194 0.00
RFQ
ALD210800ASCL

Datasheet

 		EPAD®, Zero Threshold™ 16-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair Logic Level Gate 10.6V 80mA 25Ohm 10mV @ 10µA - 15pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 16-SOIC
MSCSM120AM31T1AG

MSCSM120AM31T1AG

MOSFET 2N-CH 1200V 89A

Microchip Technology

 5,778 0.00
RFQ
MSCSM120AM31T1AG

Datasheet

 		- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 89A (Tc) 31mOhm @ 40A, 20V 2.8V @ 3mA 232nC @ 20V 3020pF @ 1000V 395W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM70VR1M19C1AG

MSCSM70VR1M19C1AG

MOSFET 2N-CH 700V 124A

Microchip Technology

 9,305 0.00
RFQ
MSCSM70VR1M19C1AG

Datasheet

 		- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 700V 124A (Tc) 19mOhm @ 40A, 20V 2.4V @ 4mA 215nC @ 20V 4500pF @ 700V 365W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120DUM31TBL1NG

MSCSM120DUM31TBL1NG

MOSFET 2N-CH 1200V 79A

Microchip Technology

 3,193 0.00
RFQ
MSCSM120DUM31TBL1NG

Datasheet

 		- Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 1200V (1.2kV) 79A 31mOhm @ 40A, 20V 2.8V @ 3mA 232nC @ 20V 3020pF @ 1000V 310W -55°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120AM31TBL1NG

MSCSM120AM31TBL1NG

MOSFET 2N-CH 1200V 79A

Microchip Technology

 2,052 0.00
RFQ
MSCSM120AM31TBL1NG

Datasheet

 		- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 79A 31mOhm @ 40A, 20V 2.8V @ 3mA 232nC @ 20V 3020pF @ 1000V 310W -55°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120HM50T3AG

MSCSM120HM50T3AG

MOSFET 4N-CH 1200V 55A

Microchip Technology

 6,679 0.00
RFQ
MSCSM120HM50T3AG

Datasheet

 		- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 55A (Tc) 50mOhm @ 40A, 20V 2.7V @ 2mA 137nC @ 20V 1990pF @ 1000V 245W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120VR1M31C1AG

MSCSM120VR1M31C1AG

MOSFET 2N-CH 1200V 89A

Microchip Technology

 9,240 0.00
RFQ
MSCSM120VR1M31C1AG

Datasheet

 		- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 89A (Tc) 31mOhm @ 40A, 20V 2.8V @ 3mA 232nC @ 20V 3020pF @ 1000V 395W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120DUM31CTBL1NG

MSCSM120DUM31CTBL1NG

MOSFET 2N-CH 1200V 79A

Microchip Technology

 8,165 0.00
RFQ
MSCSM120DUM31CTBL1NG

Datasheet

 		- Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 1200V (1.2kV) 79A 31mOhm @ 40A, 20V 2.8V @ 1mA 232nC @ 20V 3020pF @ 1000V 310W -55°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120AM31CTBL1NG

MSCSM120AM31CTBL1NG

MOSFET 2N-CH 1200V 79A

Microchip Technology

 3,104 0.00
RFQ
MSCSM120AM31CTBL1NG

Datasheet

 		- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 79A 31mOhm @ 40A, 20V 2.8V @ 1mA 232nC @ 20V 3020pF @ 1000V 310W -55°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120AM16T1AG

MSCSM120AM16T1AG

MOSFET 2N-CH 1200V 173A

Microchip Technology

 5,028 0.00
RFQ
MSCSM120AM16T1AG

Datasheet

 		- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 173A (Tc) 16mOhm @ 80A, 20V 2.8V @ 6mA 464nC @ 20V 6040pF @ 1000V 745W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120DHM31CTBL2NG

MSCSM120DHM31CTBL2NG

MOSFET 2N-CH 1200V 79A

Microchip Technology

 5,827 0.00
RFQ
MSCSM120DHM31CTBL2NG

Datasheet

 		- Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Dual) Asymmetrical - 1200V (1.2kV) 79A 31mOhm @ 40A, 20V 2.8V @ 1mA 232nC @ 20V 3020pF @ 1000V 310W -55°C ~ 175°C (TJ) - - Chassis Mount -
MCB40P1200LB-TUB

MCB40P1200LB-TUB

MOSFET 2N-CH 1200V 58A SMPD

IXYS

 4,053 0.00
RFQ
MCB40P1200LB-TUB

Datasheet

 		- 9-SMD Power Module Tube Active Silicon Carbide (SiC) 2 N-Channel (Dual) - 1200V (1.2kV) 58A - - - - - - - - Surface Mount SMPD
MSCSM120HM31T3AG

MSCSM120HM31T3AG

MOSFET 4N-CH 1200V 89A

Microchip Technology

 8,784 0.00
RFQ
MSCSM120HM31T3AG

Datasheet

 		- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 89A (Tc) 31mOhm @ 40A, 20V 2.8V @ 3mA 232nC @ 20V 3020pF @ 1000V 395W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
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