FET, MOSFET Arrays
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Configuration | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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PJS6801_S1_00001MOSFET 2P-CH 30V 3.2A SOT23-6 |
3,519 | 0.00 |
|
Datasheet |
- | SOT-23-6 | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 P-Channel (Dual) | - | 30V | 3.2A (Ta) | 74mOhm @ 3.2A, 10V | 1.3V @ 250µA | 15nC @ 10V | 633pF @ 15V | 1.25W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23-6 |
|
SQ1902AEL-T1_GE3MOSFET 2N-CH 20V 0.78A SC70-6 |
7,696 | 0.00 |
|
Datasheet |
TrenchFET® | 6-TSSOP, SC-88, SOT-363 | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | - | 20V | 780mA (Tc) | 415mOhm @ 660mA, 4.5V | 1.5V @ 250µA | 1.2nC @ 4.5V | 75pF @ 10V | 430mW | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | SC-70-6 |
|
SH8KE5TB1100V 2.5A, DUAL NCH+NCH, SOP8, P |
9,925 | 0.00 |
|
- |
* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
SQJ748EP-T1_GE3AUTOMOTIVE DUAL N-CHANNEL 40V (D |
8,537 | 0.00 |
|
Datasheet |
TrenchFET® | PowerPAK® SO-8 Dual | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel | - | 40V | 72A (Tc) | 6.88mOhm @ 7A, 10V | 3.5V @ 250µA | 21nC @ 10V | 1230pF @ 25V | 66W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8L Dual BWL |
|
SIA921EDJ-T4-GE3MOSFET 2P-CH 20V 4.5A PPAK8X8 |
2,912 | 0.00 |
|
Datasheet |
TrenchFET® | PowerPAK® SC-70-6 Dual | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 P-Channel (Dual) | Logic Level Gate | 20V | 4.5A | 59mOhm @ 3.6A, 4.5V | 1.4V @ 250µA | 23nC @ 10V | - | 7.8W | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SC-70-6 Dual |
|
SQJB44EP-T1_JE3AUTOMOTIVE DUAL N-CHANNEL 40V (D |
2,947 | 0.00 |
|
Datasheet |
TrenchFET® | PowerPAK® SO-8 Dual | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel | - | 40V | 30A (Tc) | 5.2mOhm @ 8A, 10V | 2.2V @ 250µA | 50nC @ 10V | 3075pF @ 25V | 48W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 Dual |
|
HP8KB5TB140V 16.5A, DUAL NCH+NCH, HSOP8, |
3,999 | 0.00 |
|
- |
* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
HP8KC5TB160V 12A, DUAL NCH+NCH, HSOP8, PO |
9,155 | 0.00 |
|
- |
* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ISA220280C03LMDSXTMA1ISA220280C03LMDSXTMA1 |
7,780 | 0.00 |
|
Datasheet |
OptiMOS™ 3 | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | N and P-Channel | - | 30V | 6.3A (Ta), 8.4A (Tc), 6.1A (Ta), 8.1A (Tc) | 22mOhm @ 8.4A, 10V, 28mOhm @ 8.1A, 10V | 2.7V @ 1mA | 13.4nC @ 10V | 1400pF @ 15V | 1.4W (Ta), 2.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-DSO-8-920 |
|
SIZF918BDT-T1-GE3DUAL N-CHANNEL 30 V (D-S) MOSFET |
9,436 | 0.00 |
|
Datasheet |
TrenchFET® Gen IV | 8-PowerWDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel | - | 30V | 25A (Ta), 73A (Tc), 41A (Ta), 158A (Tc) | 3.3mOhm @ 10A, 10V, 1.4Ohm @ 15A, 10V | 2.2V @ 250µA | 29nC @ 10V, 77nC @ 10V | 1290pF @ 15V, 3350pF @ 15V | 3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PowerPair® (6x5) |
|
IRF7328TRPBFMOSFET 2P-CH 30V 8A 8SO |
5,840 | 0.00 |
|
Datasheet |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 P-Channel (Dual) | Logic Level Gate | 30V | 8A | 21mOhm @ 8A, 10V | 2.5V @ 250µA | 78nC @ 10V | 2675pF @ 25V | 2W | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
HT8KB6TB1MOSFET 2N-CH 40V 8A 8HSMT |
6,890 | 0.00 |
|
Datasheet |
- | 8-PowerVDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel | - | 40V | 8A (Ta), 15A (Tc) | 17.2mOhm @ 8A, 10V | 2.5V @ 1mA | 10.6nC @ 10V | 530pF @ 20V | 2W (Ta), 14W (Tc) | 150°C (TJ) | - | - | Surface Mount | 8-HSMT (3.2x3) |
|
IQE220N15NM5SCATMA1MOSFET 2N-CH 150V 8WHSON |
6,934 | 0.00 |
|
Datasheet |
OptiMOS™ | 8-PowerWDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Half Bridge) | - | 150V | - | - | - | - | - | - | - | - | - | Surface Mount | PG-WHSON-8-1 |
|
FAM65CR51ADZ1MOSFET 2N-CH 650V 41A APMCD-B16 |
3,999 | 0.00 |
|
Datasheet |
- | 12-SSIP Exposed Pad, Formed Leads | Tube | Active | Silicon Carbide (SiC) | 2 N-Channel | - | 650V | 41A (Tc) | 51mOhm @ 20A, 10V | 5V @ 3.3mA | 123nC @ 10V | 4864pF @ 400V | 189W (Tc) | -55°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Through Hole | APMCD-B16 |
|
NVXK2TR80WDTMOSFET 4N-CH 1200V 20A APM32 |
5,193 | 0.00 |
|
Datasheet |
- | 32-PowerDIP Module (1.311", 33.30mm) | Tube | Active | Silicon Carbide (SiC) | 4 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 20A (Tc) | 116mOhm @ 20A, 20V | 4.3V @ 5mA | 56nC @ 20V | 1154pF @ 800V | 82W (Tc) | -40°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | APM32 |
|
NVXK2VR80WXT2MOSFET 6N-CH 1200V 31A APM32 |
3,969 | 0.00 |
|
Datasheet |
- | 32-PowerDIP Module (1.449", 36.80mm) | Tube | Active | Silicon Carbide (SiC) | 6 N-Channel (3-Phase Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 31A (Tc) | 116mOhm @ 20A, 20V | 4.3V @ 5mA | 56nC @ 20V | 1154pF @ 800V | 208W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | APM32 |
|
NVXK2PR80WXT2MOSFET 4N-CH 1200V 31A APM32 |
2,267 | 0.00 |
|
Datasheet |
- | 32-PowerDIP Module (1.449", 36.80mm) | Tube | Active | Silicon Carbide (SiC) | 4 N-Channel (Full Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 31A (Tc) | 116mOhm @ 20A, 20V | 4.3V @ 5mA | 56nC @ 20V | 1154pF @ 800V | 208W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | APM32 |
|
M1P45M12W2-1LAMOSFET 6N-CH 1200V ACEPACK DMT |
5,427 | 0.00 |
|
Datasheet |
ECOPACK® | 32-PowerDIP Module (1.264", 32.10mm) | Tube | Active | Silicon Carbide (SiC) | 6 N-Channel (Phase Leg) | Silicon Carbide (SiC) | 1200V (1.2kV) | 30A (Tc) | 60.5mOhm @ 20A, 18V | 5V @ 1mA | 100nC @ 18V | 2086pF @ 800V | - | -40°C ~ 175°C (TJ) | - | - | Through Hole | ACEPACK DMT-32 |
|
NVXK2VR80WDT2MOSFET 6N-CH 1200V 20A APM32 |
2,337 | 0.00 |
|
Datasheet |
- | 32-PowerDIP Module (1.449", 36.80mm) | Tube | Active | Silicon Carbide (SiC) | 6 N-Channel (3-Phase Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 20A (Tc) | 116mOhm @ 20A, 20V | 4.3V @ 5mA | 56nC @ 20V | 1154pF @ 800V | 82W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | APM32 |
|
M1F80M12W2-1LAAUTOMOTIVE-GRADE ACEPACK DMT-32 |
9,403 | 0.00 |
|
Datasheet |
* | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
