Infineon Technologies IQE220N15NM5SCATMA1

Overview

IQE220N15NM5SCATMA1 from Infineon Technologies is an N-channel 150 V, 22 mΩ (max) OptiMOSTM 5 power MOSFET in PG-WHSON-8 package, rated for 44 A continuous drain current at TC = 25 °C and optimized for synchronous rectification in high-efficiency SMPS. It features 100% avalanche tested ruggedness, low Qoss (40 nC), and integrated body diode with 25 ns typical reverse recovery time.

For engineers reviewing the IQE220N15NM5SCATMA1 datasheet, IQE220N15NM5SCATMA1 pinout, IQE220N15NM5SCATMA1 application, or IQE220N15NM5SCATMA1 equivalent, key selection criteria include RDS(on) stability over temperature, gate charge profile for ZVS/ZCS compatibility, thermal resistance (RthJC = 0.8 °C/W bottom), and body diode performance in hard-switched or resonant topologies.

Technical Context

This device implements a trench-gate, superjunction-enhanced silicon MOSFET architecture delivering low conduction loss and fast switching with controlled Qgd (3.1–4.7 nC) and Qg(total) = 14.4 nC (typ). Its gate threshold voltage (3.0–4.6 V) ensures robust noise immunity while enabling standard 10 V gate drive.

Thermal design leverages dual thermal paths: 0.8 °C/W junction-to-case (bottom) and 0.7 °C/W (top), supporting both PCB-side and heatsink-side cooling. The internal body diode is characterized for synchronous FET operation with VSD = 0.86 V (typ) at IF = 22 A and trr = 25 ns (typ).

Key Specifications

Pinout & Package

PG-WHSON-8 (Wettable Flank, Exposed Drain) package with 0.5 mm pitch, 3.3 mm × 3.3 mm footprint, and exposed thermal pad on bottom surface. Pin 1–3: Source; Pin 4: Gate; Pin 5–8: Drain (internally paralleled).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Compared with STL220N15F7AG and IXFH22N15X3, IQE220N15NM5SCATMA1 delivers superior thermal interface capability via wettable flanks and lowest Qoss among the three-critical for high-frequency, high-density SMPS where PCB-area and thermal headroom are limiting factors.

Availability

IQE220N15NM5SCATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, and telecom power supplies requiring stable component supply, JEDEC-qualified industrial reliability, and RoHS/halogen-free compliance.

Supply support for IQE220N15NM5SCATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and qualification infrastructure.

This part belongs to the OptiMOSTM 5 family-designed specifically for high-efficiency, high-frequency switched-mode power supplies where low RDS(on), fast switching, and rugged avalanche performance are mandatory.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The absolute maximum junction temperature is 175 °C, and the device is fully qualified per JEDEC JESD47 for industrial applications. Derating curves in the datasheet show that at TC = 100 °C, the continuous drain current drops to 31 A. Operation above 150 °C requires validation of RDS(on) drift and body diode VSD increase per Figure 9 and Figure 12.

Can IQE220N15NM5SCATMA1 be used as a high-side switch with bootstrap gate drive?

Yes-it supports standard 10 V gate drive and has VGS(th) = 3.0–4.6 V, making it compatible with bootstrap circuits in half-bridge configurations. However, its 150 V VDS rating limits use to topologies where high-side drain voltage does not exceed 135 V DC under worst-case transients, including ringing.

Is the internal body diode suitable for freewheeling in non-synchronous designs?

The body diode is characterized with IS = 44 A continuous and trr = 25 ns (typ), but its softness factor is not specified. For non-synchronous operation, it is usable in low-dI/dt applications like low-frequency flyback, but not recommended for hard-switched forward or push-pull where uncontrolled reverse recovery could cause voltage overshoot.

Does the PG-WHSON-8 package require special PCB layout considerations?

Yes-the wettable flank design demands solder mask defined pads with 0.15 mm solder mask opening beyond copper, and stencil aperture matching per IPC-7351B. The exposed drain pad must connect to ≥6 cm² of 70 µm copper on inner or outer layer for RthJA = 60 °C/W; insufficient copper area increases thermal resistance by up to 3×.