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Diodes Incorporated DMG6601LVT-7
- Part No.:
- DMG6601LVT-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
DMG6601LVT-7.pdf
- Description:
- MOSFET N/P-CH 30V 3.8A TSOT26
- Quantity:
- Payment:
- Shipping:
Inventory:31,149
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Product details
Overview
DMG6601LVT-7 from Diodes Incorporated is a complementary pair enhancement-mode MOSFET in a single TSOT26 package, integrating an N-channel (30V, 55mΩ @ 10V) and P-channel (-30V, 110mΩ @ -10V) device for half-bridge or level-shifting power stages. It delivers 3.8A/–2.5A continuous drain current at 25°C, low gate charge (12.3nC/13.8nC), and fast switching (tD(off) = 31.2ns/18.3ns), enabling high-efficiency DC-DC converters and backlighting drivers.
For engineers reviewing the DMG6601LVT-7 datasheet, DMG6601LVT-7 pinout, DMG6601LVT-7 application, or DMG6601LVT-7 equivalent, this dual MOSFET supports compact synchronous buck designs requiring matched RDS(on) tracking, low Ciss/Coss for reduced switching loss, and AEC-Q101 qualification for automotive-grade reliability.
Technical Context
This dual MOSFET integrates N- and P-channel devices on a single die with shared thermal path and matched threshold voltages (VGS(th) = +0.5–1.5V / –0.4––1.2V), enabling precise complementary gate drive without external level shifters. Its TSOT26 package provides 147°C/W junction-to-ambient thermal resistance under standard FR-4 layout.
The device features low input capacitance (Ciss = 422pF/541pF), fast turn-off delay (31.2ns/18.3ns), and tightly controlled RDS(on) temperature coefficient - critical for stable operation across –55°C to +150°C ambient range in power management ICs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30V (N-ch), –30V (P-ch): Supports 24V rail switching and 12V automotive input with 2× safety margin. |
| RDS(on) max | 55mΩ @ VGS = 10V (N), 110mΩ @ VGS = –10V (P): Enables <1W conduction loss at 3A in compact layouts. |
| Qg | 12.3nC (N), 13.8nC (P): Reduces gate driver power demand and enables >1MHz PWM operation. |
| ID cont. | 3.8A (N), –2.5A (P) @ TA = 25°C: Sustains typical LED backlight or point-of-load converter peak currents. |
| Ciss | 422pF (N), 541pF (P): Minimizes Miller effect during high-dV/dt transitions in synchronous rectification. |
| tD(off) | 31.2ns (N), 18.3ns (P): Ensures clean dead-time control and prevents shoot-through in half-bridge topologies. |
| TJ range | –55°C to +150°C: Qualified per AEC-Q101, suitable for under-hood automotive and industrial environments. |
Pinout & Package
TSOT26 surface-mount package (2.9mm × 2.8mm × 0.95mm), molded green compound, NiPdAu-plated terminals, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (S1) | N-channel source | Common source node for N-ch; connects to ground or low-side return path in half-bridge. |
| 2 (G1) | N-channel gate | Drives N-MOSFET; requires 10V logic-level or gate driver output. |
| 3 (D1) | N-channel drain | Connects to input rail or high-side switch node; shares thermal path with P-ch drain. |
| 4 (D2) | P-channel drain | Shared drain terminal with D1; forms common switching node in complementary topology. |
| 5 (G2) | P-channel gate | Drives P-MOSFET; referenced to source (pin 6); negative voltage required for full enhancement. |
| 6 (S2) | P-channel source | Connects to output rail or load; defines reference for P-ch gate drive and body diode conduction. |
Key Features
| Feature | Design Value |
|---|---|
| Complementary N+P pairing | Matched VGS(th) and RDS(on) temperature coefficients enable stable dead-time control without external compensation. |
| Low gate charge asymmetry | Qg ratio of 12.3nC/13.8nC minimizes gate driver sizing mismatch in dual-output drivers. |
| Fast turn-off delay | 18.3ns P-ch tD(off) reduces cross-conduction risk in high-frequency synchronous buck regulators. |
| AEC-Q101 qualified | Validated for automotive power systems including infotainment supplies and LED lighting modules. |
| Green RoHS-compliant | Halogen- and antimony-free (<900ppm Br/Cl, <1000ppm Sb) meets EU ELV and JGPSSI requirements. |
Applications
| LED Backlight Driver | Synchronous Buck Converter |
|---|---|
|
Use Scenario: Driving white LED strings in automotive instrument clusters with PWM dimming up to 20kHz. IC Role / Device Role / Timing Role: N-channel switches high-side LED current; P-channel handles low-side return with matched timing to suppress EMI. Use Value: Low RDS(on) and fast tf (15.6ns) minimize PWM transition losses, improving efficiency by ≥3% vs. discrete MOSFET pairs. |
Use Scenario: 12V-to-3.3V point-of-load conversion for microcontroller power rails in industrial PLCs. IC Role / Device Role / Timing Role: Forms integrated half-bridge power stage; N-ch as high-side switch, P-ch as synchronous rectifier. Use Value: Matched Ciss/Coss ensures consistent zero-voltage switching behavior, reducing MOSFET heating at 500kHz operation. |
| Automotive Body Control Module | USB-C Power Delivery Switch |
|
Use Scenario: Controlling solenoid valves and relays in BCMs with reverse-polarity protection and load dump tolerance. IC Role / Device Role / Timing Role: P-channel provides reverse-battery protection; N-channel enables active load switching with fast turn-on (tD(on) = 1.6ns). Use Value: –30V VDSS withstands ISO 7637-2 pulse 5a (–100V/50ms), eliminating need for external TVS clamping. |
Use Scenario: Bidirectional power path control in USB-C PD sink applications requiring 5–20V input range. IC Role / Device Role / Timing Role: N-channel handles forward conduction (VBUS to load); P-channel manages reverse blocking during source negotiation. Use Value: Dual-threshold design (±1.2V window) ensures robust gate control across USB PD CC logic levels without level-shifter ICs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar complementary MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN601DWK-7 | Single N-channel only (60V, 100mΩ), no P-ch integration; higher RDS(on), larger TSOT26 footprint. | Requires external P-MOSFET and level shifter for half-bridge use; increases BOM count and layout area. | Select when higher VDSS headroom is needed and space permits discrete implementation. |
| SI6926ADQ-T1-GE3 | Complementary pair in SO-8; 30V/–30V, but higher RDS(on) (70mΩ/140mΩ) and slower tD(off) (45ns/25ns). | Larger package limits high-density portable designs; higher conduction loss impacts thermal budget in sealed enclosures. | Choose for legacy SO-8 board compatibility where thermal derating allows 20% lower current rating. |
Compared with DMN601DWK-7 and SI6926ADQ-T1-GE3, the DMG6601LVT-7 offers superior integration density, tighter RDS(on) matching, and faster switching-critical for space-constrained, high-frequency automotive and USB-C power applications.
Availability
DMG6601LVT-7 is available at Aetrix Electronics and suitable for LED backlighting, synchronous buck converters, and automotive body control modules requiring stable component supply and AEC-Q101 compliance.
Supply support for DMG6601LVT-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management and signal integrity solutions for automotive, industrial, and consumer markets.
The DMG6601LVT-7 belongs to Diodes' Automotive-Qualified Power MOSFET product line, engineered specifically for compact, high-efficiency DC-DC conversion and load switching in harsh-environment applications.
FAQ
What is the maximum continuous drain current for each channel at 70°C ambient?
At TA = +70°C, the N-channel supports 3.0A continuous drain current and the P-channel supports –2.0A, as specified in the Absolute Maximum Ratings table under "Continuous Drain Current (Note 6)" with thermal vias. This reflects 21% and 20% derating from 25°C values due to reduced thermal resistance (RθJA = 96°C/W).
Can DMG6601LVT-7 be used in a bootstrap-gated high-side N-channel configuration?
No - the DMG6601LVT-7 integrates a P-channel device for high-side switching, eliminating the need for bootstrap circuitry. Its P-channel (Q2) is designed for direct gate drive referenced to its source (pin 6), making it suitable for high-side loads without floating gate drivers or charge pumps.
Is the TSOT26 package lead-free and RoHS compliant?
Yes - the DMG6601LVT-7 uses NiPdAu-plated copper leadframe and halogen/antimony-free green molding compound, meeting EU RoHS Directive 2011/65/EU and JGPSSI standards with <900ppm bromine/chlorine and <1000ppm antimony.
How does the device handle reverse polarity and load dump transients?
The P-channel's –30V VDSS rating and AEC-Q101 qualification ensure robustness against reverse battery conditions and ISO 7637-2 load dump pulses (up to –100V). Its body diode forward voltage (–0.8V to –1.0V) also provides inherent reverse-current blocking without external diodes.
DMG6601LVT-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- N and P-Channel
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 3.8A, 2.5A
- Rds On (Max) @ Id, Vgs:
- 55mOhm @ 3.4A, 10V
- Vgs(th) (Max) @ Id:
- 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 12.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 422pF @ 15V
- Power - Max:
- 850mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TSOT-26
DMG6601LVT-7 FAQ
1.How can I place an order for DMG6601LVT-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMG6601LVT-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMG6601LVT-7 reliable?
The price and inventory of DMG6601LVT-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMG6601LVT-7 is usually 5 days.
3.What payment methods are accepted for DMG6601LVT-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMG6601LVT-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMG6601LVT-7?
DMG6601LVT-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMG6601LVT-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMG6601LVT-7?
For technical support, including DMG6601LVT-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMG6601LVT-7 requirements.
6.How does Aetrix verify that DMG6601LVT-7 is sourced from the original manufacturer or authorized distributors?
All DMG6601LVT-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMG6601LVT-7 meets industry standards.
7.What is the process for return or replacement of DMG6601LVT-7?
All DMG6601LVT-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMG6601LVT-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMG6601LVT-7 part is unused and in its original packaging.
Return procedure for DMG6601LVT-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMG6601LVT-7 Tags
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SSM6N7002KFU,LF
Toshiba Semiconductor and Storage
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2N7002DW-7-F
Diodes Incorporated
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SSM6L56FE,LM
Toshiba Semiconductor and Storage
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SSM6N37FU,LF
Toshiba Semiconductor and Storage
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2N7002DWH6327XTSA1
Infineon Technologies
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2N7002BKS,115
Nexperia USA Inc.
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DMG1016UDW-7
Diodes Incorporated
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UM6K33NTN
Rohm Semiconductor
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DMG6602SVT-7
Diodes Incorporated
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EM6K34T2CR
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UM6K34NTCN
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DMG6601LVT-7
Diodes Incorporated
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