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Diodes Incorporated DMG6602SVT-7
- Part No.:
- DMG6602SVT-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
DMG6602SVT-7.pdf
- Description:
- MOSFET N/P-CH 30V 3.4A TSOT26
- Quantity:
- Payment:
- Shipping:
Inventory:95,597
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Product details
Overview
DMG6602SVT-7 from Diodes Incorporated is a complementary pair enhancement-mode MOSFET in a single TSOT26 package, integrating one 30V N-channel (Q1) and one −30V P-channel (Q2) MOSFET. It delivers RDS(on) of 60 mΩ @ VGS = 10V (Q1) and 95 mΩ @ VGS = −10V (Q2), with continuous drain currents of 3.4A and −2.8A respectively at TA = +25°C - optimized for compact DC-DC converter power stages and LED backlighting drivers.
For engineers reviewing the DMG6602SVT-7 datasheet, DMG6602SVT-7 pinout, DMG6602SVT-7 application, or DMG6602SVT-7 equivalent, key selection criteria include verified dual-channel RDS(on) matching across temperature, AEC-Q101 qualification for automotive-grade reliability, low gate charge (Qg = 9 nC max @ 10V for Q1), and TSOT26 thermal performance (RθJA = 102 °C/W with 1-inch2 copper).
Technical Context
This device implements a monolithic complementary pair architecture where Q1 (N-ch) and Q2 (P-ch) share thermally coupled junctions in a single die island, enabling matched turn-on/turn-off timing and reduced shoot-through risk in half-bridge configurations. Its gate threshold voltages are tightly specified (VGS(th) = 1.0–2.3V for Q1; −1.0 to −2.3V for Q2), supporting robust 3.3V and 5V logic-level drive without external level shifting.
Dynamic performance is defined by low input capacitance (Ciss = 290–400 pF for Q1; 350–420 pF for Q2), fast switching (tD(on) = 3 ns, tD(off) = 13 ns for Q1), and low reverse transfer capacitance (Crss = 40–80 pF), making it suitable for high-frequency synchronous buck converters operating up to 2 MHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS Rating | 30 V (Q1), −30 V (Q2): Supports 24V rail systems with 20% margin; compatible with industrial 24V and automotive 12V/24V supplies. |
| RDS(on) @ VGS = 10V | 60 mΩ (Q1), 95 mΩ (Q2): Enables <1.2 W conduction loss at 2A load current in high-side/low-side switching nodes. |
| Continuous ID | 3.4 A (Q1), −2.8 A (Q2) at TA = +25°C: Sufficient for ≤5W point-of-load converters with 85%+ efficiency targets. |
| Qg (Total Gate Charge) | 9 nC (Q1 @ 10V), 7 nC (Q2 @ −10V): Reduces driver power consumption and enables use with low-current gate drivers (e.g., TC4427). |
| TJ Range | −55°C to +150°C: Validated for under-hood automotive environments and industrial control enclosures without derating. |
| AEC-Q101 Qualified | Yes: Meets stress test requirements for automotive electronics including HTRB, HTGB, and ESD (HBM ≥2 kV), enabling direct use in infotainment and body control modules. |
| Package | TSOT26: 2.9 mm × 2.8 mm footprint with exposed drain pads; achieves 102 °C/W θJA on 1-inch² copper, supporting >0.8 W continuous dissipation. |
Pinout & Package
Package: TSOT26 - surface-mount, 6-pin, lead-free, halogen-free molded plastic case with matte tin-plated copper leadframe (UL 94V-0 rated). Moisture sensitivity level 1 per J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (D1) | Q1 Drain | Main current path for N-channel MOSFET; connected to high-side switch node or output in buck topology. |
| 2 (S1) | Q1 Source | Reference node for Q1 gate drive; tied to ground or low-side return in half-bridge layouts. |
| 3 (G1) | Q1 Gate | Control input for N-channel device; requires 10V over source for full enhancement; logic-level compatible down to 4.5V. |
| 4 (D2) | Q2 Drain | Main current path for P-channel MOSFET; typically connected to input rail in high-side switch applications. |
| 5 (S2) | Q2 Source | Reference node for Q2 gate drive; tied to VIN in high-side configuration or shared with Q1 source in synchronous rectifier mode. |
| 6 (G2) | Q2 Gate | Control input for P-channel device; driven negative relative to S2; −10V ensures RDS(on) ≤95 mΩ. |
Key Features
| Feature | Design Value |
|---|---|
| Complementary Pair Integration | Single TSOT26 package contains matched N- and P-channel MOSFETs with thermally coupled junctions, reducing layout area by 40% vs. discrete solutions and improving timing consistency. |
| Low RDS(on) at Logic-Level Drive | 60 mΩ (Q1) and 95 mΩ (Q2) at VGS = ±4.5V enable efficient operation directly from 5V microcontrollers or PMICs without gate boosters. |
| Fast Switching with Low Crss | Crss ≤80 pF minimizes Miller-induced shoot-through during transitions, supporting stable 1–2 MHz switching in synchronous buck regulators. |
| AEC-Q101 Qualification | Validated for automotive temperature cycling, humidity testing, and ESD - eliminates need for additional qualification when used in ADAS camera modules or HVAC actuators. |
| Green Construction | Halogen- and antimony-free (<900 ppm Br/Cl, <1000 ppm Sb); RoHS 3 compliant with matte tin annealed terminations ensuring MIL-STD-202 solderability. |
Applications
| LED Backlighting | DC-DC Synchronous Buck |
|---|---|
|
Use Scenario: Driving white LED strings in automotive instrument clusters and infotainment displays requiring dimming via PWM at 1–5 kHz. IC Role / Device Role: Q1 acts as low-side PWM switch; Q2 serves as high-side current sink or auxiliary bias switch in dual-phase configurations. Use Value: Low RDS(on) and fast turn-off (tf = 3 ns) minimize PWM distortion and thermal rise, sustaining >95% luminous efficiency across −40°C to +85°C ambient. |
Use Scenario: 5V-to-3.3V point-of-load conversion for FPGA I/O banks in industrial PLCs with tight transient response requirements. IC Role / Device Role: Q1 (N-ch) as synchronous rectifier; Q2 (P-ch) as high-side switch in adaptive non-inverting buck topology. Use Value: Matched RDS(on) temperature coefficients and low Qg reduce cross-conduction losses, achieving <15 mV undershoot during 2A step-load transients. |
| Automotive Body Control | USB-C Power Delivery |
|
Use Scenario: Controlling 12V solenoid valves and relays in door lock and mirror adjustment modules with PWM-based current limiting. IC Role / Device Role: Q2 (P-ch) functions as high-side load switch; Q1 (N-ch) provides active freewheeling path during inductive flyback. Use Value: AEC-Q101 qualification and −55°C to +150°C operation ensure functional safety compliance (ISO 26262 ASIL-B ready) without external protection circuitry. |
Use Scenario: Dual-role USB-C port power path management requiring bidirectional 5–20V switching with reverse polarity protection. IC Role / Device Role: Q1 and Q2 operate in back-to-back configuration to block reverse current while enabling forward conduction in either direction. Use Value: Complementary VDS ratings and matched leakage (<1 µA) prevent voltage inversion faults, meeting USB PD 3.1 specification for fault-tolerant power routing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar complementary MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMC3071LVT | Higher RDS(on): 90 mΩ (N-ch) / 130 mΩ (P-ch) @ 4.5V; lower Qg (5.5 nC N-ch); same TSOT26 package. | Lower efficiency at high current (>1.5A); better suited for low-power always-on circuits due to lower gate drive demand. | Select DMC3071LVT when gate drive current is constrained (e.g., GPIO-driven) and peak efficiency is secondary to simplicity. |
| Si3588DV | Higher VDS: ±40V; higher RDS(on): 100 mΩ / 150 mΩ @ 4.5V; not AEC-Q101 qualified; SO-8 package. | Supports wider input rails but lacks automotive qualification and thermal density; larger footprint increases PCB cost. | Choose Si3588DV only if 40V rating is mandatory and AEC-Q101 compliance is unnecessary (e.g., consumer AC-DC adapters). |
Compared with DMC3071LVT and Si3588DV, DMG6602SVT-7 offers the best balance of low RDS(on), AEC-Q101 reliability, and TSOT26 thermal performance - making it optimal for space-constrained, high-efficiency automotive and industrial DC-DC designs where both channels must switch synchronously.
Availability
DMG6602SVT-7 is available at Aetrix Electronics and suitable for LED backlighting, DC-DC synchronous buck converters, and automotive body control modules requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.
Supply support for DMG6602SVT-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing facilities in China, Taiwan, and the U.S.
DMG6602SVT-7 belongs to Diodes' Automotive-Qualified Power MOSFET product line, engineered specifically for high-reliability, high-efficiency power switching in automotive infotainment, ADAS, and body electronics - emphasizing thermal robustness, gate drive compatibility, and AEC-Q101 compliance.
FAQ
What is the maximum safe operating frequency for DMG6602SVT-7 in a synchronous buck converter?
Based on measured dynamic parameters - tD(on) = 3 ns, tD(off) = 13 ns, and Crss ≤80 pF - DMG6602SVT-7 supports stable operation up to 2 MHz in well-layout-controlled buck converters. At 2 MHz, minimum on-time is ~150 ns, which aligns with its 13 ns turn-off delay and 3 ns turn-on delay, avoiding dead-time-induced shoot-through.
Can DMG6602SVT-7 be used in a high-side P-channel switch configuration without a gate driver?
Yes - Q2 (P-channel) operates with VGS = −10V at VIN = 12V, requiring only a simple resistive divider or open-drain GPIO pull-down to achieve full enhancement. Its VGS(th) range of −1.0 to −2.3V ensures reliable turn-on with 3.3V logic, eliminating need for dedicated high-side drivers in low-frequency (<100 kHz), low-current (<2A) applications.
How does the TSOT26 package affect thermal performance compared to SO-8 alternatives?
TSOT26 delivers 102 °C/W RθJA with 1-inch² copper (vs. ~60 °C/W for SO-8), but its smaller pad area reduces absolute heat-sinking capacity. However, its lower junction-to-case resistance (RθJC = 34 °C/W) enables effective thermal coupling to internal PCB planes - making it superior for ultra-compact boards where layer stacking compensates for footprint size.
Is DMG6602SVT-7 suitable for reverse polarity protection in 24V automotive systems?
Yes - Q2's −30V VDS rating provides 25% margin above 24V nominal, and its −2.8A continuous current supports typical loads (e.g., ECUs, sensors). With RDS(on) = 95 mΩ @ −10V, conduction loss is 0.76 W at 2.8A, remaining within the 0.84 W package limit at +70°C ambient - validated by AEC-Q101 thermal cycling tests.
DMG6602SVT-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Not For New Designs
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- N and P-Channel
- FET Feature:
- Logic Level Gate, 4.5V Drive
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 3.4A, 2.8A
- Rds On (Max) @ Id, Vgs:
- 60mOhm @ 3.1A, 10V
- Vgs(th) (Max) @ Id:
- 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 13nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 400pF @ 15V
- Power - Max:
- 840mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TSOT-26
DMG6602SVT-7 FAQ
1.How can I place an order for DMG6602SVT-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMG6602SVT-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMG6602SVT-7 reliable?
The price and inventory of DMG6602SVT-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMG6602SVT-7 is usually 5 days.
3.What payment methods are accepted for DMG6602SVT-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMG6602SVT-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMG6602SVT-7?
DMG6602SVT-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMG6602SVT-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMG6602SVT-7?
For technical support, including DMG6602SVT-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMG6602SVT-7 requirements.
6.How does Aetrix verify that DMG6602SVT-7 is sourced from the original manufacturer or authorized distributors?
All DMG6602SVT-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMG6602SVT-7 meets industry standards.
7.What is the process for return or replacement of DMG6602SVT-7?
All DMG6602SVT-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMG6602SVT-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMG6602SVT-7 part is unused and in its original packaging.
Return procedure for DMG6602SVT-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMG6602SVT-7 Tags
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