Diodes Incorporated DMG1016UDW-7

Overview

DMG1016UDW from Diodes Incorporated is a complementary pair enhancement-mode MOSFET in a single SOT363 package, integrating an N-channel (20V, 0.45Ω @ 4.5V) and P-channel (–20V, 0.75Ω @ –4.5V) device for bidirectional switching. It delivers 1066mA continuous drain current (Q1) and –845mA (Q2), with low gate threshold (0.5–1.0V / –0.5 to –1.0V), fast switching (t_D(ON) = 5.1ns), and ESD protection-ideal for compact battery-powered load control circuits.

For engineers reviewing the DMG1016UDW datasheet, DMG1016UDW pinout, DMG1016UDW application, or DMG1016UDW equivalent, this dual-channel discrete solution supports space-constrained designs requiring matched complementary drive, low-voltage logic-level compatibility, and thermally robust operation up to +150°C ambient.

Technical Context

This complementary MOSFET pair uses planar enhancement-mode silicon technology with optimized channel geometry to achieve low R_DS(ON) while maintaining tight V_GS(TH) matching between Q1 and Q2 (±0.5V typical spread). The devices share a common source configuration in the SOT363 footprint, enabling half-bridge or push-pull topologies without external interconnects.

Thermal performance is defined by R_θJA = 379°C/W on FR-4 PCB with minimum pad layout, and safe operating area (SOA) is validated for DC and pulsed conditions up to 10ms at T_A = +25°C. Gate charge parameters (Q_g = 737nC / 622pC) support efficient PWM-driven switching below 1MHz.

Key Specifications

Pinout & Package

Package: SOT363 - ultra-small surface-mount plastic package (2.15 × 2.10 × 0.95 mm), lead-free, RoHS-compliant, moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary MOSFET switching applications.

Compared with DMG1016UDW, DMN2016LSD-13 lacks complementary integration and demands external biasing, while Si1032RDL trades 30% higher R_DS(ON) and 25% lower current rating for broader distributor availability-making DMG1016UDW optimal for space- and efficiency-constrained dual-switch designs.

Availability

DMG1016UDW is available at Aetrix Electronics and suitable for battery-operated systems, solid-state relay modules, and power-supply converter circuits requiring stable component supply, long-term lifecycle assurance, and automotive-grade reliability validation.

Supply support for DMG1016UDW includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power management, signal integrity, and protection solutions for industrial, computing, and automotive markets.

The DMG1016UDW belongs to Diodes' logic-level complementary MOSFET product line, engineered specifically for miniaturized, low-voltage power switching applications where board space, thermal performance, and AEC-Q reliability are critical design constraints.

FAQ

What is the maximum continuous drain current for each channel at +85°C ambient?

At T_A = +85°C, the N-channel (Q1) supports 690mA continuous drain current, and the P-channel (Q2) supports –548mA. These values reflect thermal derating based on R_θJA = 379°C/W and 330mW total power dissipation on standard FR-4 PCB with minimum pad layout.

Can DMG1016UDW be used in a half-bridge configuration without external components?

No-DMG1016UDW integrates complementary N+P FETs with a shared source (Pins 1 & 4), making it suitable for high-side/low-side load switching or push-pull outputs, but not for true half-bridge operation which requires floating high-side gate drive and isolated source nodes.

Is the SOT363 package compatible with standard reflow profiles for lead-free soldering?

Yes-the SOT363 package uses matte tin-finished alloy 42 leadframes and is rated for peak reflow temperatures up to 260°C per JEDEC J-STD-020, meeting IPC/JEDEC standard lead-free profiles with ramp rates ≤3°C/s and dwell time at peak temperature ≤60 seconds.

Does the DMG1016UDW have built-in body diode functionality for flyback energy recovery?

Yes-both channels include intrinsic body diodes: Q1's diode has V_SD = 0.7–1.2V at 150mA, and Q2's diode has V_SD = –0.8 to –1.2V at –150mA. These diodes support freewheeling in inductive load applications such as relay or solenoid driving, though external Schottky diodes may be added for faster recovery if required.