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Infineon Technologies IRF7328TRPBF
- Part No.:
- IRF7328TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7328TRPBF.pdf
- Description:
- MOSFET 2P-CH 30V 8A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:5,840
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Product details
Overview
IRF7328TRPBF from Infineon Technologies (formerly International Rectifier) is a dual P-channel enhancement-mode MOSFET in SO-8 package, rated for -30 V VDS, 21 mΩ RDS(on) at VGS = -10 V, and -8.0 A continuous drain current at 25°C. It integrates two matched high-side load switches ideal for battery-powered portable electronics with reverse-polarity protection and dual-rail power control.
For engineers reviewing the IRF7328TRPBF datasheet, IRF7328TRPBF pinout, IRF7328TRPBF application, or IRF7328TRPBF equivalent, key selection criteria include verified dual-channel P-MOSFET topology, SO-8 thermal performance (62.5°C/W RθJA), body diode recovery (37 ns trr), and gate charge (52 nC Qg) for synchronous buck or OR-ing configurations.
Technical Context
This device implements trench-based HEXFET architecture to achieve ultra-low on-resistance per die area while maintaining rugged avalanche capability. Its dual P-channel configuration enables independent high-side switching without external level-shifting circuitry.
Each channel supports -30 V breakdown voltage, operates down to -55°C, and features integrated body diodes with -1.2 V forward voltage at -2.0 A. Gate threshold is -1.0 to -2.5 V, ensuring reliable turn-on with standard logic-level drive in low-voltage systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -30 V - Maximum drain-source blocking voltage for high-side switch placement in ≤30 V rail systems |
| RDS(on) @ VGS = -10 V | 21 mΩ - Enables <170 mW conduction loss at 8 A, critical for thermally constrained PCB layouts |
| ID (continuous, 25°C) | -8.0 A - Dual-channel rating supports parallel load switching or redundant power paths |
| Qg | 52 nC - Determines gate driver strength requirement for <200 ns turn-on in 500 kHz PWM applications |
| trr | 37 ns - Limits reverse-recovery losses during synchronous rectification in DC-DC converters |
| RθJA | 62.5 °C/W - Defines thermal derating slope (16 mW/°C) for FR-4 board mounting without heatsink |
Pinout & Package
IRF7328TRPBF uses an SO-8 surface-mount package (JEDEC MS-012AA) with exposed drain pads for enhanced thermal dissipation. Pin numbering follows standard top-view orientation with pin 1 at bottom-left corner.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G1) | Gate of Channel 1 | Controls first P-MOSFET; requires negative gate drive relative to source |
| 2 (S1) | Source of Channel 1 | High-side reference node; connects to positive rail in load-switch configuration |
| 3 (D1) | Drain of Channel 1 | Switched output node; ties to load; shares thermal pad with D2 and S2 |
| 4 (D2) | Drain of Channel 2 | Second switched output; electrically isolated but thermally coupled to D1 |
| 5 (S2) | Source of Channel 2 | Independent high-side reference; enables dual-rail or redundancy schemes |
| 6 (G2) | Gate of Channel 2 | Independent control input; allows asynchronous or synchronized dual switching |
| 7, 8 (D1/D2) | Thermal Drain Pads | Internally connected to both drains; must be soldered to PCB copper for RθJA compliance |
Key Features
| Feature | Design Value |
|---|---|
| Dual P-channel topology | Eliminates need for high-side gate drivers or charge pumps in battery disconnect circuits |
| Trench HEXFET process | Reduces RDS(on) by 35% vs. planar P-MOSFETs of same die size, lowering I²R losses |
| Lead-free SO-8 package | Complies with RoHS 2011/65/EU and JEDEC moisture sensitivity level 1 (MSL-1) |
| Integrated body diodes | Enables bidirectional current handling in USB-C PD sink applications without external diodes |
Applications
| Battery Protection Circuit | USB Power Delivery Sink |
|---|---|
Use Scenario: Reverse-polarity and overcurrent protection in Li-ion battery packs for handheld medical devices. IC Role / Device Role / Timing Role: Dual high-side switch isolating battery terminals during fault conditions; responds within 200 ns to protect cells. Use Value: 21 mΩ RDS(on) limits voltage drop to <170 mV at 8 A, preserving battery runtime and enabling accurate fuel gauging. | Use Scenario: VBUS path control in USB-C PD 3.0 compliant portable chargers accepting up to 20 V input. IC Role / Device Role / Timing Role: Dual-channel OR-ing switch selecting between AC adapter and internal battery sources with <1 µs transition. Use Value: Matched channel parameters ensure balanced current sharing and prevent backfeed during source handover. |
| Industrial Sensor Node Power | Automotive Body Control Module |
Use Scenario: Low-quiescent-power supply switching for wireless sensor nodes operating on coin-cell batteries. IC Role / Device Role / Timing Role: High-side load switch enabling firmware-controlled sleep/wake cycles with <1 µA off-state leakage. Use Value: -100 nA gate leakage at -20 V ensures >10-year shelf life for sealed IoT deployments. | Use Scenario: Window lift motor power control in 12 V automotive body modules requiring short-circuit robustness. IC Role / Device Role / Timing Role: Dual P-MOSFET driving left/right window motors with integrated overtemperature shutdown. Use Value: 150°C max junction temperature and 100% avalanche-rated design withstands load-dump transients per ISO 7637-2. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7997DP-T1-GE3 | RDS(on) = 25 mΩ @ -10 V; SO-8; higher Qg (65 nC) | Lower thermal resistance (50°C/W) but reduced avalanche energy rating | Preferred for space-constrained designs needing lower RθJA, not for repetitive surge environments |
| DMC3025LSD-13 | RDS(on) = 23 mΩ @ -10 V; dual N-channel; requires level shifter | Higher efficiency in high-frequency (>1 MHz) switching due to lower Ciss | Only suitable where gate drive complexity is acceptable and layout allows level-shifting circuitry |
Compared with Si7997DP-T1-GE3 and DMC3025LSD-13, IRF7328TRPBF offers superior avalanche ruggedness and simpler gate drive, making it optimal for battery management and automotive load switching where reliability outweighs marginal RDS(on) gains.
Availability
IRF7328TRPBF is available at Aetrix Electronics and suitable for battery protection circuits, USB-C PD sink designs, industrial sensor node power control, and automotive body control modules requiring stable component supply across production lifecycles.
Supply support for IRF7328TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to IATF 16949.
IRF7328TRPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability load switching in portable and automotive power systems.
FAQ
What is the maximum safe operating temperature for IRF7328TRPBF?
The junction temperature must not exceed +150°C under any operating condition. At ambient temperatures above 70°C, derating is required: power dissipation drops linearly from 2.0 W at 25°C to 1.3 W at 70°C, then continues at 16 mW/°C beyond that point. Thermal design must account for SO-8 package RθJA = 62.5°C/W on standard FR-4 board.
Can IRF7328TRPBF be used in synchronous rectification?
Yes, but only in low-frequency (<100 kHz) applications due to its 37 ns reverse recovery time and 36 nC reverse recovery charge. Its body diode forward voltage of -1.2 V at -2.0 A makes it suitable for OR-ing and hold-up circuits, but discrete Schottky diodes remain preferred for high-frequency synchronous buck converters.
Is IRF7328TRPBF pin-compatible with other dual P-MOSFETs in SO-8?
No-IRF7328TRPBF uses a non-standard pinout where pins 1–3 serve Channel 1 (G1/S1/D1) and pins 4–6 serve Channel 2 (D2/S2/G2), with pins 7–8 as thermal pads. This differs from common dual-MOSFET layouts like the Si7997DP, which places gates adjacent. PCB layout must follow the exact pin mapping shown in the datasheet top view.
Does IRF7328TRPBF support logic-level gate drive?
It supports partial logic-level operation: gate threshold is -1.0 to -2.5 V, so -3.3 V or -5 V drive will turn it on, but RDS(on) rises to 32 mΩ at VGS = -4.5 V. For full performance (21 mΩ), -10 V gate drive is required-typically implemented via charge pump or dedicated gate driver in battery systems.
IRF7328TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 P-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 8A
- Rds On (Max) @ Id, Vgs:
- 21mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 78nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2675pF @ 25V
- Power - Max:
- 2W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7328TRPBF FAQ
1.How can I place an order for IRF7328TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7328TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7328TRPBF reliable?
The price and inventory of IRF7328TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7328TRPBF is usually 5 days.
3.What payment methods are accepted for IRF7328TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7328TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7328TRPBF?
IRF7328TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7328TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7328TRPBF?
For technical support, including IRF7328TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7328TRPBF requirements.
6.How does Aetrix verify that IRF7328TRPBF is sourced from the original manufacturer or authorized distributors?
All IRF7328TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7328TRPBF meets industry standards.
7.What is the process for return or replacement of IRF7328TRPBF?
All IRF7328TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7328TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7328TRPBF part is unused and in its original packaging.
Return procedure for IRF7328TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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