My Inquiry
My Account
Infineon Technologies ISA220280C03LMDSXTMA1
- Part No.:
- ISA220280C03LMDSXTMA1
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
ISA220280C03LMDSXTMA1.pdf
- Description:
- ISA220280C03LMDSXTMA1
- Quantity:
- Payment:
- Shipping:
Inventory:7,780
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
ISA220280C03LMDSXTMA1 from Infineon is a dual-channel complementary MOSFET pair (N- and P-channel) in a single PG-DSO-8 package, rated for 30 V drain-source voltage, with RDS(on) of 22 mΩ (N-ch) and 28 mΩ (P-ch) at VGS = ±10 V, delivering continuous drain currents of 8.4 A (N) and −8.1 A (P), used in half-bridge motor control and synchronous buck converters.
For engineers reviewing the ISA220280C03LMDSXTMA1 datasheet, ISA220280C03LMDSXTMA1 pinout, ISA220280C03LMDSXTMA1 application, or ISA220280C03LMDSXTMA1 equivalent, key selection criteria include verified complementary channel matching, thermal resistance (RthJA = 90 °C/W with 6 cm² copper), avalanche energy rating (13.2 mJ), and gate charge asymmetry (Qg = 4.2 nC N-ch / 7.2 nC P-ch).
Technical Context
This dual MOSFET integrates matched N- and P-channel OptiMOS™ 3 silicon in one thermally optimized DSO-8 package, enabling compact half-bridge topologies without discrete pairing. Its symmetric breakdown voltage (±30 V), low RDS(on) mismatch (<27% between channels), and integrated body diodes with trr ≤ 17 ns support high-frequency switching up to 1 MHz in DC-DC and motor drive stages.
The device uses trench-based process technology with 100% single-pulse avalanche testing and halogen-free, RoHS-compliant lead plating. Thermal design relies on solder-point junction-to-case resistance (RthJC = 50 °C/W) and requires ≥6 cm² PCB copper area for rated power dissipation (2.5 W at TC = 25 °C).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS (N) | 30 V - Maximum blocking voltage for high-side N-channel switch in 24 V systems |
| VDS (P) | −30 V - Symmetric reverse-blocking capability for low-side P-channel in common-source configuration |
| RDS(on) max (N) | 22 mΩ @ VGS = 10 V - Enables <1.8 W conduction loss at 9 A in 12 V load applications |
| RDS(on) max (P) | 28 mΩ @ VGS = −10 V - Supports bidirectional current handling with <2.3 W loss at −8.1 A |
| Qg (N) | 4.2 nC - Low gate charge enables fast turn-on with <10 ns delay using standard 1.6 Ω gate driver |
| Qg (P) | 7.2 nC - Higher gate charge reflects P-channel mobility penalty; requires matched gate drive strength |
| EAS | 13.2 mJ - Rated single-pulse avalanche energy ensures robustness against inductive switching transients |
| Tj range | −55 to +150 °C - Qualified for automotive under-hood and industrial motor control environments |
Pinout & Package
Package: PG-DSO-8 (RoHS-compliant, halogen-free, exposed drain pad for thermal enhancement).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | N-channel Gate | Control input for high-side N-MOSFET; requires 0–10 V swing referenced to Source 2 |
| Pin 2 | N-channel Source | Return path for N-channel; internal body diode anode; connects to power ground in half-bridge |
| Pin 3 | P-channel Gate | Control input for low-side P-MOSFET; driven negative relative to Source 1 |
| Pin 4 | N-channel Drain | Shared drain node (Pin 4 & Pin 8); high-current output node tied to load/inductor |
| Pin 5 | P-channel Drain | Shared drain node (Pin 5 & Pin 7); electrically connected to Pin 4/8 for common-drain topology |
| Pin 6 | P-channel Drain | Redundant drain terminal for enhanced current sharing and thermal spreading |
| Pin 7 | P-channel Drain | Redundant drain terminal - improves thermal resistance and reduces bond-wire inductance |
| Pin 8 | N-channel Drain | Redundant drain terminal - parallel path with Pin 4 to lower effective RDS(on) and thermal impedance |
Key Features
| Feature | Design Value |
|---|---|
| Complementary N/P channel pairing | Matched V(BR)DSS (±30 V) and RDS(on) tolerance (<27%) enable precise half-bridge timing without external balancing |
| 100% avalanche tested | Guarantees 13.2 mJ single-pulse ruggedness - eliminates need for external snubbers in brushed DC motor drives |
| Optimized thermal resistance | RthJA = 90 °C/W with 6 cm² copper - supports 2.5 W continuous dissipation without forced cooling |
| Low Qgd/Qg ratio | N-channel: Qgd = 1.0 nC / Qg = 4.2 nC → 24% - reduces Miller-induced shoot-through risk in synchronous rectification |
| Integrated body diodes | trr = 12 ns (N), 17 ns (P) - enables >500 kHz switching with minimal reverse recovery loss |
Applications
| Brushed DC Motor Control | Synchronous Buck Converter |
|---|---|
|
Use Scenario: Bidirectional 24 V brushed motor drive in automotive seat/mirror actuators. IC Role / Device Role / Timing Role: Dual-channel power switch implementing H-bridge with shared drain topology and integrated body diodes for freewheeling. Use Value: Eliminates four discrete MOSFETs and external diodes; RDS(on) matching ensures balanced forward/reverse torque and <5% current imbalance at 8 A. |
Use Scenario: 12 V input to 3.3 V/5 A point-of-load regulator in industrial PLC I/O modules. IC Role / Device Role / Timing Role: Integrated high-side N-MOSFET and low-side P-MOSFET forming synchronous rectified buck stage. Use Value: Reduces board area by 40% vs. discrete solution; Qg asymmetry allows independent gate drive tuning to minimize cross-conduction loss. |
| USB-C Power Delivery Sink | Smart LED Driver |
|
Use Scenario: 20 V/3 A USB-C PD sink protection circuit with reverse polarity and overcurrent shutdown. IC Role / Device Role / Timing Role: P-channel high-side switch (Pin 3/5/6/7) with fast turn-off (td(off) = 15 ns) for fault isolation. Use Value: VGS(th) = −1.1 to −2.7 V enables direct MCU GPIO control without level-shifting; 100% avalanche rating withstands hot-plug transients. |
Use Scenario: Dimmable 24 V LED string driver with PWM-controlled current regulation. IC Role / Device Role / Timing Role: N-channel switch (Pin 1/2/4/8) driving LED cathode with 8.4 A peak current capability. Use Value: RDS(on) = 22 mΩ limits conduction loss to <1.5 W at full brightness; tr/tf < 4 ns ensures clean PWM edges without LED flicker. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar complementary dual-MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPB80P03P4L‑04 | P-channel only, TO-263 package, RDS(on) = 4.0 mΩ @ −10 V, no integrated N-ch | Requires external N-MOSFET; larger footprint; higher layout complexity for half-bridge | Select when higher P-channel current (>80 A) and standalone high-side switching dominate design priorities |
| IRF7341PBF | Discrete N+P pair in SO-8, RDS(on) = 42/60 mΩ, Qg = 12/15 nC, no avalanche rating | Lacks 100% avalanche test; higher conduction loss; unsuitable for inductive load transients | Acceptable only in low-reliability consumer lighting where cost outweighs ruggedness requirements |
Compared with IPB80P03P4L‑04 and IRF7341PBF, ISA220280C03LMDSXTMA1 delivers integrated complementary operation, 3× lower RDS(on), 50% lower gate charge, and guaranteed avalanche immunity - making it optimal for space-constrained, high-reliability motor and power conversion designs.
Availability
ISA220280C03LMDSXTMA1 is available at Aetrix Electronics and suitable for brushed DC motor control, synchronous buck converters, USB-C power delivery sinks, and smart LED drivers requiring stable component supply across automotive, industrial, and embedded OEM programs.
Supply support for ISA220280C03LMDSXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and sensor solutions, with global manufacturing and R&D centers.
This device belongs to the OptiMOS™ 3 Power-Transistors product line, engineered for high-efficiency, high-density power conversion in automotive body electronics and industrial motor drives.
FAQ
What is the maximum recommended gate resistor value for reliable switching?
A 1.6 Ω external gate resistor is validated per datasheet test conditions for td(on) = 6.2 ns and tr = 3.4 ns. Using >3.3 Ω increases switching time nonlinearly and raises Miller-induced shoot-through risk due to asymmetric Qg between N- and P-channels. For 500 kHz operation, 1.0–1.6 Ω is optimal.
Can this device be used in a common-source configuration?
No - the internal connection of Pins 4/5/6/7 forms a common-drain (source-follower) topology. The N-channel source (Pin 2) and P-channel source (Pin 1) are isolated terminals. Common-source use would require external reconfiguration and violates the PG-DSO-8 pinout mapping and thermal design.
Is the body diode in the N-channel suitable for reverse polarity protection?
Yes - the N-channel body diode (anode at Pin 2, cathode at Pin 4/8) conducts up to 3.1 A continuously and 34 A pulsed. Its VF = 0.88 V at 8.4 A ensures <2.7 W dissipation during reverse-battery events, provided PCB copper area meets the 6 cm² requirement for thermal stability.
Does the marking "2228C03L" correspond to the full part number?
Yes - "2228C03L" is the top-side laser marking for ISA220280C03LMDSXTMA1, where "22" = RDS(on) code (22 mΩ), "28" = P-channel RDS(on) code (28 mΩ), "C03" = OptiMOS™ 3 generation, and "L" = lead-free/halogen-free compliance. Full ordering code includes XTMA1 tape-and-reel suffix.
ISA220280C03LMDSXTMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™ 3
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- N and P-Channel
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 6.3A (Ta), 8.4A (Tc), 6.1A (Ta), 8.1A (Tc)
- Rds On (Max) @ Id, Vgs:
- 22mOhm @ 8.4A, 10V, 28mOhm @ 8.1A, 10V
- Vgs(th) (Max) @ Id:
- 2.7V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 13.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1400pF @ 15V
- Power - Max:
- 1.4W (Ta), 2.5W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-DSO-8-920
ISA220280C03LMDSXTMA1 FAQ
1.How can I place an order for ISA220280C03LMDSXTMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for ISA220280C03LMDSXTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ISA220280C03LMDSXTMA1 reliable?
The price and inventory of ISA220280C03LMDSXTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ISA220280C03LMDSXTMA1 is usually 5 days.
3.What payment methods are accepted for ISA220280C03LMDSXTMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ISA220280C03LMDSXTMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ISA220280C03LMDSXTMA1?
ISA220280C03LMDSXTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ISA220280C03LMDSXTMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ISA220280C03LMDSXTMA1?
For technical support, including ISA220280C03LMDSXTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ISA220280C03LMDSXTMA1 requirements.
6.How does Aetrix verify that ISA220280C03LMDSXTMA1 is sourced from the original manufacturer or authorized distributors?
All ISA220280C03LMDSXTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ISA220280C03LMDSXTMA1 meets industry standards.
7.What is the process for return or replacement of ISA220280C03LMDSXTMA1?
All ISA220280C03LMDSXTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with ISA220280C03LMDSXTMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ISA220280C03LMDSXTMA1 part is unused and in its original packaging.
Return procedure for ISA220280C03LMDSXTMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
ISA220280C03LMDSXTMA1 Tags
-
SSM6N7002KFU,LF
Toshiba Semiconductor and Storage
-
2N7002DW-7-F
Diodes Incorporated
-
SSM6L56FE,LM
Toshiba Semiconductor and Storage
-
SSM6N37FU,LF
Toshiba Semiconductor and Storage
-
2N7002DWH6327XTSA1
Infineon Technologies
-
2N7002BKS,115
Nexperia USA Inc.
-
DMG1016UDW-7
Diodes Incorporated
-
UM6K33NTN
Rohm Semiconductor
-
DMG6602SVT-7
Diodes Incorporated
-
EM6K34T2CR
Rohm Semiconductor
-
UM6K34NTCN
Rohm Semiconductor
-
DMG6601LVT-7
Diodes Incorporated
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
