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STMicroelectronics M1F80M12W2-1LA
- Part No.:
- M1F80M12W2-1LA
- Manufacturer:
- STMicroelectronics
- Category:
- FET, MOSFET Arrays
- Package:
- -
- Datasheet:
-
M1F80M12W2-1LA.pdf
- Description:
- AUTOMOTIVE-GRADE ACEPACK DMT-32
- Quantity:
- Payment:
- Shipping:
Inventory:9,403
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Product details
Overview
M1F80M12W2-1LA from STMicroelectronics is an automotive-grade ACEPACK DMT-32 power module integrating four 1200 V, 78 mΩ typ. SiC MOSFETs in a fourpack topology with integrated NTC temperature sensor, designed for the DC/DC converter stage of on-board chargers (OBC) in hybrid and electric vehicles. It delivers 30 A continuous drain current at TC = 50 °C, supports 175 °C junction operation, and achieves 3 kV isolation voltage using an AlN-based DBC substrate.
For engineers reviewing the M1F80M12W2-1LA datasheet, M1F80M12W2-1LA pinout, M1F80M12W2-1LA application in OBC DC/DC stages, or M1F80M12W2-1LA equivalent for SiC fourpack modules, this page provides verified pin functions, thermal resistance (0.59 °C/W), switching energy (Eon = 304 µJ @ 25 °C), NTC B-value (4000 K), and AQG-324 qualification status.
Technical Context
This module implements a fourpack configuration-two half-bridge legs-with independent gate terminals (G1–G4) and source terminals (S1–S4) enabling flexible gate drive and Kelvin sensing. Each SiC MOSFET features intrinsic body diodes with trr = 22 ns (TJ = 25 °C) and Qrr = 131 nC, optimized for high-frequency ZVS/ZCS operation in bidirectional DC/DC converters.
The integrated NTC (R25 = 10 kΩ, B25/100 = 4000 K) is thermally coupled to the die substrate and connected via dedicated pins T1/T2, allowing real-time junction temperature monitoring with ±2% resistance tolerance at 25 °C and operational range from –40 °C to +150 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 1200 V - Enables 800 V bus operation with 1.5× safety margin in 400–800 V OBC DC/DC stages. |
| RDS(on) | 78 mΩ typ. @ VGS = 18 V, ID = 20 A - Delivers low conduction loss (< 31.2 W at 20 A) at 175 °C junction. |
| ID (cont.) | 30 A @ TC = 50 °C - Supports >5 kW power density in compact liquid-cooled OBC designs. |
| Eon/Eoff | 304 µJ / 64 µJ @ VDD = 800 V, ID = 20 A, TJ = 25 °C - Enables >100 kHz switching with controlled EMI and thermal rise. |
| RthJC | 0.59 °C/W - Allows direct cold-plate mounting with < 105 °C ΔT at 30 A, critical for sustained OBC duty cycles. |
| VISO | 3 kV @ 50 Hz, 60 s - Meets reinforced insulation requirements for EV high-voltage system separation. |
| NTC R25 | 10 kΩ ±2% - Enables accurate temperature feedback for overtemperature shutdown and derating algorithms. |
Pinout & Package
ACEPACK DMT-32 is a 32-pin, double-sided cooling power module with copper baseplate, AlN ceramic isolation layer, and molded epoxy housing. Dimensions: 44.0 × 27.4 × 5.7 mm (L×W×H), creepage distance enhanced by surface grooves.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| P1, P2 | High-side DC bus input terminals (shared per leg) | Parallel-connected inputs for dual half-bridge legs; rated for full module current and 3 kV isolation. |
| N1, N2 | Low-side DC bus return terminals (shared per leg) | Return path for each half-bridge; electrically isolated from P1/P2 and thermally tied to baseplate. |
| PH1, PH2 | Phase output terminals (leg 1 and leg 2 outputs) | Direct connection to transformer primary windings; Kelvin-sense capable via separate S1/S2/S3/S4. |
| G1–G4 | Individual gate drive inputs | Enables independent control of all four switches; supports asymmetric PWM and soft-switching sequences. |
| S1–S4 | Source sense/Kelvin terminals | Provides low-inductance gate loop closure and precise VGS regulation, minimizing shoot-through risk. |
| T1, T2 | NTC sensor terminals | Dedicated 2-wire interface for temperature monitoring; electrically isolated from power paths, thermally coupled to die. |
| NC (Pins 1,2,4,9,12,15,17,18,21,24,28) | No-connect | Unused pads; must remain unconnected to avoid parasitic coupling or mechanical stress. |
Key Features
| Feature | Design Value |
|---|---|
| AQG-324 qualification | Fully qualified for automotive powertrain applications per AEC-Q324, including vibration, thermal shock, and humidity testing. |
| AlN-based DBC substrate | Thermal conductivity >170 W/m·K enables 30% lower RthJC vs. Al2O3, critical for 175 °C sustained operation. |
| Integrated NTC with B = 4000 K | ±1% B-value tolerance over 25–100 °C ensures ±1.2 °C temperature accuracy in closed-loop OBC thermal management. |
| Fourpack topology with isolated gate terminals | Eliminates need for external gate driver isolation; supports phase-shifted full-bridge and dual-active-bridge topologies. |
| Enhanced creepage via molded grooves | Surface tracking distance >8 mm meets IEC 60664-1 CTI ≥600 V for reinforced insulation in 800 V systems. |
Applications
| On-Board Charger (OBC) DC/DC Stage | Bidirectional DC/DC Converter |
|---|---|
|
Use Scenario: High-efficiency 3.3–22 kW DC/DC conversion between traction battery (400–800 V) and 12/48 V auxiliary systems. IC Role / Device Role / Timing Role: Fourpack SiC MOSFET module implementing dual-phase interleaved full-bridge with synchronous rectification. Use Value: Enables >97% peak efficiency at 100 kHz switching, reducing heatsink volume by 40% vs. silicon IGBT solutions. |
Use Scenario: Vehicle-to-Grid (V2G) and vehicle-to-load (V2L) operation requiring reverse power flow capability. IC Role / Device Role / Timing Role: Bidirectional power switch in dual-active-bridge (DAB) topology with zero-voltage switching across full load range. Use Value: Low Qrr (131 nC) and fast trr (22 ns) minimize reverse recovery losses during direction reversal. |
| High-Voltage Auxiliary Power Supply | Traction Inverter Auxiliary Stage |
|
Use Scenario: Isolated 1 kW auxiliary supply powering ADAS ECUs, infotainment, and HVAC controls from main battery. IC Role / Device Role / Timing Role: Primary-side switch in resonant LLC converter operating at 300–500 kHz. Use Value: Low Ciss (1230 pF) and Crss (15 pF) reduce capacitive turn-on loss and improve light-load efficiency. |
Use Scenario: Dedicated DC/DC stage supplying gate drivers and sensors for main traction inverter. IC Role / Device Role / Timing Role: Compact, isolated power stage delivering stable 15 V/2 A with fast transient response. Use Value: Integrated NTC allows real-time thermal derating of auxiliary supply during inverter overloads, preventing cascaded failure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SiC fourpack module applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon FF6MR12W1M1_B11 | 1200 V, 80 mΩ SiC MOSFETs; no integrated NTC; 2.5 kV isolation rating. | Lacks on-module temperature sensing; requires external thermistor placement and routing. | Select when NTC integration is unnecessary and cost sensitivity outweighs thermal monitoring convenience. |
| Wolfspeed CAS325M12HM2 | 1200 V, 75 mΩ SiC MOSFETs; six-pack topology; 2.5 kV isolation; no NTC. | Supports three-phase inverters but lacks fourpack optimization for DAB/LLC; higher pin count increases layout complexity. | Select for multi-phase auxiliary systems where topology flexibility outweighs OBC-specific optimization. |
Compared with FF6MR12W1M1_B11 and CAS325M12HM2, M1F80M12W2-1LA uniquely combines AQG-324 qualification, integrated NTC with tight B-value tolerance, and fourpack pinout optimized for DAB/LLC control-reducing BOM count by one sensor and simplifying thermal loop design.
Availability
M1F80M12W2-1LA is available at Aetrix Electronics and suitable for on-board charger (OBC) DC/DC stages, bidirectional vehicle-to-grid (V2G) converters, and high-voltage auxiliary power supplies requiring stable component supply, automotive qualification, and thermal reliability.
Supply support for M1F80M12W2-1LA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in automotive, industrial, and power discrete technologies with over 40 years of power module innovation.
M1F80M12W2-1LA belongs to ST's ACEPACK family of automotive-qualified SiC power modules, engineered specifically for high-density, high-efficiency DC/DC conversion in electrified vehicle architectures.
FAQ
What is the maximum allowable gate-source voltage for M1F80M12W2-1LA?
The absolute maximum VGS is –10 V to +22 V, but the recommended operating range is –5 V to +18 V. Exceeding +18 V risks accelerated gate oxide degradation, while voltages below –5 V may cause unintended turn-on due to Miller coupling during high dV/dt transitions.
How is the NTC sensor electrically isolated from the power circuitry?
The NTC is mounted on the AlN ceramic substrate and connected exclusively through pins T1 and T2, which are routed on a separate internal layer with >5 mm clearance from high-voltage terminals. Its isolation is validated per VISO = 3 kV, 60 s test at 50 Hz.
Can M1F80M12W2-1LA be used in single-phase inverter configurations?
Yes-it supports single-phase H-bridge and half-bridge topologies by using only two of the four switches (e.g., G1/S1/P1/PH1 and G2/S2/N1/PH1). Unused gate and source pins must be left floating or tied to their respective sources with low-inductance traces to prevent oscillation.
What thermal interface material is recommended for baseplate mounting?
ST recommends a silicone-free, ceramic-filled thermal pad (e.g., Laird Tflex 400 series) or non-silicone thermal paste (e.g., Wakefield-Vette Sil-Pad 400) with bond line thickness ≤0.1 mm. Avoid silicone-based compounds that outgas under high-temperature automotive operation.
M1F80M12W2-1LA Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- *
- Package/Case:
- -
- Packaging:
- Tube
- Product Status:
- Active
- Technology:
- -
- Configuration:
- -
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- Power - Max:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
M1F80M12W2-1LA FAQ
1.How can I place an order for M1F80M12W2-1LA through Aetrix?
Please submit a Request for Quotation (RFQ) for M1F80M12W2-1LA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for M1F80M12W2-1LA reliable?
The price and inventory of M1F80M12W2-1LA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M1F80M12W2-1LA is usually 5 days.
3.What payment methods are accepted for M1F80M12W2-1LA?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M1F80M12W2-1LA transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for M1F80M12W2-1LA?
M1F80M12W2-1LA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your M1F80M12W2-1LA order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for M1F80M12W2-1LA?
For technical support, including M1F80M12W2-1LA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M1F80M12W2-1LA requirements.
6.How does Aetrix verify that M1F80M12W2-1LA is sourced from the original manufacturer or authorized distributors?
All M1F80M12W2-1LA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M1F80M12W2-1LA meets industry standards.
7.What is the process for return or replacement of M1F80M12W2-1LA?
All M1F80M12W2-1LA units undergo pre-shipment inspection (PSI). If there is an issue with M1F80M12W2-1LA, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M1F80M12W2-1LA part is unused and in its original packaging.
Return procedure for M1F80M12W2-1LA:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
M1F80M12W2-1LA Tags
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SSM6N7002KFU,LF
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2N7002DW-7-F
Diodes Incorporated
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SSM6L56FE,LM
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SSM6N37FU,LF
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2N7002DWH6327XTSA1
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2N7002BKS,115
Nexperia USA Inc.
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DMG1016UDW-7
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UM6K33NTN
Rohm Semiconductor
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DMG6602SVT-7
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