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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

STMicroelectronics M1P45M12W2-1LA

Name: M1P45M12W2-1LA
Brand: STMicroelectronics
SKU: M1P45M12W2-1LA
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: M1P45M12W2-1LA

Manufacturer:: STMicroelectronics

Category:: FET, MOSFET Arrays

Package:: 32-PowerDIP Module (1.264", 32.10mm)

Datasheet:: M1P45M12W2-1LA.pdf

Description:: MOSFET 6N-CH 1200V ACEPACK DMT

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Product details

Overview

M1P45M12W2-1LA from STMicroelectronics is an ACEPACK DMT-32 sixpack SiC power module integrating six 1200 V, 47.5 mΩ typ. silicon carbide MOSFETs and an embedded NTC temperature sensor, designed for DC/DC converter stages in on-board chargers (OBC) of hybrid and electric vehicles. It features AQG-324 qualification, 3 kV isolation voltage, and a DBC Cu-AlN-Cu substrate enabling 0.38 °C/W junction-to-case thermal resistance.

For engineers reviewing the M1P45M12W2-1LA datasheet, M1P45M12W2-1LA pinout, M1P45M12W2-1LA application in OBC DC/DC stages, or M1P45M12W2-1LA equivalent for high-power SiC sixpack topologies, this page delivers verified electrical specs, terminal mapping, thermal performance data, and automotive-grade qualification context essential for system-level design validation and BOM selection.

Technical Context

This module implements a fully integrated sixpack inverter topology with three half-bridge legs (PH1–PH3), each comprising high-side and low-side SiC MOSFETs with matched R_DS(on) (47.5 mΩ typ.) and switching energy (E_on = 518 µJ, E_off = 86 µJ at 25 °C). The AlN-based DBC substrate ensures stable thermal performance up to 175 °C junction temperature.

The integrated NTC sensor (R₂₅ = 10 kΩ, B-value = 4000 K) is electrically isolated and thermally coupled to the die stack via pins T1/T2, enabling real-time junction temperature monitoring without external sensing components. Creepage distance is enhanced by molded grooves per AQG-324 requirements.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	1200 V - Enables operation in 800 V nominal EV battery systems with >50 % voltage margin for transients and derating.
R_DS(on)	47.5 mΩ typ. at V_GS = 18 V, I_D = 20 A - Defines conduction loss in high-current OBC DC/DC phases; increases to 101 mΩ at 175 °C.
E_on/E_off	518 µJ / 86 µJ at 25 °C - Quantifies switching loss per transition at 800 V, 25 A; critical for >100 kHz soft-switched OBC designs.
R_thJC	0.38 °C/W - Junction-to-case thermal resistance directly determines heatsink sizing and thermal interface material selection.
V_ISO	3 kV AC for 60 s - Confirms reinforced isolation between power terminals and control/sensing pins per automotive safety standards.
NTC R₂₅	10 kΩ ±2 % - Enables accurate temperature calibration across -40 to 150 °C range using standard NTC lookup tables or linearization.
I_D (cont.)	30 A at T_C = 50 °C - Specifies maximum continuous current under defined case temperature, defining thermal derating envelope.

Pinout & Package

ACEPACK DMT-32 is a 32-pin, surface-mount power module with copper baseplate, AlN insulation, and molded epoxy housing (44.0 × 27.4 × 5.7 mm). Pin layout follows bottom-view symmetry with dual-source/drain terminals per phase and dedicated NTC sensing pins.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 7, 8, 11, 12, 31, 32	NC	No-connect pads; structural support and creepage enhancement only-no internal connection.
3–6, 9–10, 13–14	PH3, PH2, PH1	Phase output terminals (U/V/W); each pair connects to one half-bridge leg's source-drain path in sixpack topology.
17, 18	P, N	DC bus positive and negative terminals; carry full inverter current and define main power loop inductance.
19–30	G1–G6, S1–S6	Gate and source terminals for six MOSFETs; Gx/Sx pairs correspond to individual switches in PH1–PH3 legs.
15, 16	T2, T1	NTC sensor terminals; provide two-wire resistance measurement path referenced to module thermal mass-not galvanically isolated from power die.

Key Features

Feature	Design Value
AQG-324 qualification	Validated for automotive power electronics per AEC-Q324 stress test profile-including temperature cycling, humidity, and mechanical shock.
DBC Cu-AlN-Cu substrate	Reduces R_thJC to 0.38 °C/W and enables sustained 175 °C operation-critical for compact OBC thermal management.
Integrated NTC (R₂₅ = 10 kΩ)	Eliminates discrete sensor placement error and thermal lag; provides direct junction-proximate temperature feedback for overtemperature shutdown.
High creepage via molded grooves	Meets ≥8 mm creepage requirement for 3 kV isolation in polluted environments-verified per IEC 60664-1.
Sixpack topology with matched dies	All six SiC MOSFETs share identical R_DS(on), Q_g, and switching energy-ensures balanced current sharing and reduced circulating losses.

Applications

On-Board Charger (OBC) DC/DC Stage

High-Voltage Auxiliary Power Supply

Use Scenario: Bidirectional 3.3 kW or 6.6 kW DC/DC conversion between 400 V/800 V traction battery and 12 V/48 V low-voltage network.

IC Role / Device Role / Timing Role: Sixpack inverter core executing phase-shifted or resonant ZVS control at 100–300 kHz.

Use Value: Low R_DS(on) and fast switching reduce conduction + switching losses below 2.5 % efficiency penalty at full load.

Use Scenario: Isolated auxiliary supply powering vehicle ECUs, HVAC controls, and infotainment during ignition-off battery maintenance.

IC Role / Device Role / Timing Role: Primary-side SiC inverter driving high-frequency transformer in LLC resonant topology.

Use Value: 175 °C max junction temperature allows derated operation without forced air cooling-reducing system size and noise.

Traction Inverter Pre-Charge Circuit

Regenerative Braking Energy Recovery

Use Scenario: Controlled pre-charge of high-voltage DC link capacitors prior to main contactor closure in BEV powertrain.

IC Role / Device Role / Timing Role: High-side switch in active pre-charge path, operating in linear mode for controlled dV/dt ramp.

Use Value: 1200 V blocking rating accommodates 900 V+ battery stacks while maintaining safe margin during transient overvoltage events.

Use Scenario: Bidirectional energy transfer from motor/generator back to battery during deceleration in PHEV architectures.

IC Role / Device Role / Timing Role: Full-bridge inverter operating in synchronous rectification mode with precise dead-time control.

Use Value: Integrated NTC enables real-time thermal throttling of regen torque to prevent SiC die overheating during repeated braking cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC sixpack inverter applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
FS820R12A2T4_B11	1200 V, 20 mΩ typ., 32-pin EasyPACK 2 - lower R_DS(on) but no integrated NTC; requires external temperature sensing.	Preferred for higher-efficiency 11 kW OBC where thermal monitoring is implemented separately via PCB-mounted sensors.	Select when lowest conduction loss is prioritized and board space allows discrete NTC routing and calibration.
FF600R12ME4	1200 V, 1.7 mΩ Si IGBT-based sixpack - higher switching loss (E_on > 2 mJ), limited to <50 kHz operation.	Suitable for cost-sensitive 3.3 kW OBCs targeting <94 % peak efficiency and non-AQG qualified platforms.	Choose only if SiC cost premium is prohibitive and thermal constraints permit larger heatsinks and lower switching frequency.

Compared with FS820R12A2T4_B11, M1P45M12W2-1LA trades 27.5 mΩ higher R_DS(on) for integrated thermal sensing and AQG-324 compliance; versus FF600R12ME4, it delivers >6× lower switching energy and 125 °C higher max junction temperature-enabling smaller magnetics and passive components.

Availability

M1P45M12W2-1LA is available at Aetrix Electronics and suitable for on-board charger (OBC) DC/DC converters, high-voltage auxiliary power supplies, and traction inverter pre-charge circuits requiring stable component supply, automotive qualification, and long-term lifecycle support.

Supply support for M1P45M12W2-1LA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

M1P45M12W2-1LA belongs to ST's ACEPACK family of automotive-qualified SiC power modules, engineered specifically for high-efficiency, high-power-density traction and charging systems in electrified vehicles.

FAQ

What is the maximum gate drive voltage for M1P45M12W2-1LA?

The absolute maximum gate-source voltage is -10 V to +22 V, but the recommended operating range is -5 V to +18 V. Driving beyond +18 V risks accelerated gate oxide degradation, while negative gate bias below -5 V is required for robust short-circuit immunity in automotive fault conditions.

Does the integrated NTC require external excitation current?

Yes-the NTC must be biased with a constant current source (typically 10–100 µA) or voltage divider to generate measurable voltage drop across pins T1/T2. ST recommends using a 10 kΩ pull-up to 3.3 V with ADC sampling to achieve ±1.5 °C accuracy from -40 to 150 °C.

Can M1P45M12W2-1LA be used in single-phase inverter configurations?

Yes-it supports partial utilization: any two of the three PHx legs can be configured as a single-phase H-bridge, while unused phase terminals (e.g., PH3) remain unconnected. Gate drivers must be disabled for unused Gx/Sx pairs to prevent shoot-through.

What is the creepage distance achieved by the molded grooves?

The grooved molding achieves ≥8.5 mm creepage between P/N and control terminals (e.g., G1–S1), validated per IEC 60664-1 Annex G for Pollution Degree 3 and Material Group IIIa. This exceeds the 7.2 mm minimum required for 3 kV isolation at 800 V system level.

M1P45M12W2-1LA Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: ECOPACK®

Package/Case:: 32-PowerDIP Module (1.264", 32.10mm)

Packaging:: Tube

Product Status:: Active

Technology:: Silicon Carbide (SiC)

Configuration:: 6 N-Channel (Phase Leg)

FET Feature:: Silicon Carbide (SiC)

Drain to Source Voltage (Vdss):: 1200V (1.2kV)

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Rds On (Max) @ Id, Vgs:: 60.5mOhm @ 20A, 18V

Vgs(th) (Max) @ Id:: 5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 100nC @ 18V

Input Capacitance (Ciss) (Max) @ Vds:: 2086pF @ 800V

Power - Max:: -

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: ACEPACK DMT-32

M1P45M12W2-1LA FAQ

1.How can I place an order for M1P45M12W2-1LA through Aetrix?

Please submit a Request for Quotation (RFQ) for M1P45M12W2-1LA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for M1P45M12W2-1LA reliable?

The price and inventory of M1P45M12W2-1LA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M1P45M12W2-1LA is usually 5 days.

3.What payment methods are accepted for M1P45M12W2-1LA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M1P45M12W2-1LA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for M1P45M12W2-1LA?

M1P45M12W2-1LA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your M1P45M12W2-1LA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for M1P45M12W2-1LA?

For technical support, including M1P45M12W2-1LA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M1P45M12W2-1LA requirements.

6.How does Aetrix verify that M1P45M12W2-1LA is sourced from the original manufacturer or authorized distributors?

All M1P45M12W2-1LA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M1P45M12W2-1LA meets industry standards.

7.What is the process for return or replacement of M1P45M12W2-1LA?

All M1P45M12W2-1LA units undergo pre-shipment inspection (PSI). If there is an issue with M1P45M12W2-1LA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The M1P45M12W2-1LA part is unused and in its original packaging.

Return procedure for M1P45M12W2-1LA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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