FETs, MOSFETs
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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G230P06KP-CH,-60V,-60A,RD(MAX)<20M@-10V, Goford Semiconductor |
1,697 | 0.00 |
|
Datasheet |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 60A (Tc) | 10V | 20mOhm @ -10A,- 10V | 4V @ 250µA | 62 nC @ 10 V | ±20V | 4581 pF @ 30 V | - | 115W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
|
GT090N06KMOSFET, N-CH, 60V,45A,TO-252 Goford Semiconductor |
1,583 | 0.00 |
|
Datasheet |
SGT | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 45A (Tc) | 4.5V, 10V | 9mOhm @ 14A, 10V | 2.4V @ 250µA | 22 nC @ 10 V | ±20V | 1088 pF @ 30 V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
|
GT110N06D5N60V, 45A,RD<11M@10V,VTH1.0V~2.4 Goford Semiconductor |
9,976 | 0.00 |
|
Datasheet |
GT | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 45A (Tc) | 4.5V, 10V | 11mOhm @ 14A, 10V | 2.4V @ 250µA | 31 nC @ 10 V | ±20V | 1202 pF @ 30 V | - | 69W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (4.9x5.75) |
|
GT650N15KN150V,RD(MAX)<65M@10V,VTH2.5V~4. Goford Semiconductor |
1,927 | 0.00 |
|
Datasheet |
SGT | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 20A (Tc) | 10V | 65mOhm @ 10A, 10V | 4.5V @ 250µA | 12 nC @ 10 V | ±20V | 600 pF @ 75 V | - | 68W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
|
G300P06TMOSFET, P-CH, 60V,40A,TO-220 Goford Semiconductor |
150 | 0.00 |
|
Datasheet |
TrenchFET® | TO-220-3 | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 40A (Tc) | 10V | 30mOhm @ 12A, 10V | 3V @ 250µA | 49 nC @ 10 V | ±20V | 2736 pF @ 30 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
|
G050P03D5MOSFET P-CH 30V 85A 100W 4M(MAX) Goford Semiconductor |
5,000 | 0.00 |
|
- |
Trench | 8-PowerTDFN | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 85A (Tc) | 10V, 4.5V | 4mOhm @ 20A, 10V | 2.5V @ 250µA | 111 nC @ 10 V | 20V | 7670 pF @ 15 V | - | 100W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (4.9x5.75) |
|
25P06P60V,RD(MAX)<45M@-10V,VTH2V~3V T Goford Semiconductor |
3,714 | 0.00 |
|
Datasheet |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 25A (Tc) | 10V | 32mOhm @ 12A, 10V | 3V @ 250µA | 37 nC @ 10 V | ±20V | 2527 pF @ 30 V | - | 100W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
|
45P40P40V,RD(MAX)<14M@-10V,VTH2V~3V T Goford Semiconductor |
8,281 | 0.00 |
|
Datasheet |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 45A (Tc) | 10V | 14mOhm @ 20A, 10V | 2.5V @ 250µA | 42 nC @ 10 V | ±20V | 2960 pF @ 20 V | - | 80W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
|
G20P10KEP-CH, -100V, 20A, RD(MAX)<116M@- Goford Semiconductor |
2,433 | 0.00 |
|
Datasheet |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 20A (Tc) | 10V | 116mOhm @ 16A, 10V | 3V @ 250µA | 70 nC @ 10 V | ±20V | 3354 pF @ 50 V | - | 69W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
|
G75P04SMOSFET, P-CH,-40V,-11A,RD(MAX)<8 Goford Semiconductor |
1,910 | 0.00 |
|
Datasheet |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 20A (Tc) | 4.5V, 10V | 8mOhm @ 10A, 10V | 2.5V @ 250µA | 106 nC @ 10 V | ±20V | 6893 pF @ 20 V | - | 5.7W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOP |
