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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
GT2K0P20K MOSFET P-CH 200V 18A 138W 220M(M Goford Semiconductor	2,500	RFQ	-	SGT	-	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	200 V	18A (Tc)	10V, 4.5V	220mOhm @ 15A, 10V	3V @ 250µA	70 nC @ 10 V	20V	3400 pF @ 100 V	-	138W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	-
GT400P10K MOSFET P-CH 100V 35A TO-252 Goford Semiconductor	1,205	RFQ	Datasheet	SGT	TO-252-3, DPAK (2 Leads + Tab), SC-63	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	100 V	35A (Tc)	4.5V, 10V	35mOhm @ 10A, 10V	2.5V @ 250µA	41 nC @ 10 V	±20V	3128 pF @ 50 V	-	106W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252
GT100N12D5 N120V,RD(MAX)<10M@10V,VTH2.5V~3. Goford Semiconductor	5,000	RFQ	Datasheet	-	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	120 V	70A	-	10mOhm @ 35A, 10V	3.5V @ 250µA	50 nC @ 10 V	±20V	3050 pF @ 60 V	-	120W	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-DFN (5x6)
G100N03D5 N-CH, 30V, 100A, RD(MAX)<3.5M@10 Goford Semiconductor	4,885	RFQ	Datasheet	TrenchFET®	8-PowerTDFN	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	30 V	100A (Tc)	4.5V, 10V	3.5mOhm @ 20A, 10V	2.5V @ 250µA	38 nC @ 10 V	±20V	5595 pF @ 50 V	-	50W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-DFN (4.9x5.75)
GT2K0P20D5 MOSFET P-CH 200V 19A 138W 200M(M Goford Semiconductor	5,000	RFQ	-	SGT	8-PowerTDFN	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	200 V	19A (Tc)	10V, 4.5V	200mOhm @ 15A, 10V	3V @ 250µA	70 nC @ 10 V	20V	3400 pF @ 100 V	-	138W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-DFN (4.9x5.75)
GT100N12T N120V,RD(MAX)<10M@10V,VTH2.5V~3. Goford Semiconductor	168	RFQ	Datasheet	SGT	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	120 V	70A (Tc)	10V	10mOhm @ 35A, 10V	4V @ 250µA	50 nC @ 10 V	±20V	3050 pF @ 60 V	-	100W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220
GT1K2P15S MOSFET P-CH 150V 5A 3W 150M(MAX) Goford Semiconductor	4,000	RFQ	-	Trench	-	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	150 V	5A (Tc)	10V, 4.5V	150mOhm @ 5A, 10V	3V @ 250µA	86 nC @ 10 V	20V	3275 pF @ 75 V	-	3W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	-
G75P04K P40V,RD(MAX)<10M@-10V,VTH-1.2V~- Goford Semiconductor	910	RFQ	Datasheet	TrenchFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	40 V	80A (Tc)	10V	6.5mOhm @ 10A, 20V	2.5V @ 250µA	106 nC @ 10 V	±20V	7039 pF @ 20 V	-	115W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252
G65P06K P60V,RD(MAX)<18M@-10V,VTH-2V~-3. Goford Semiconductor	3,821	RFQ	Datasheet	TrenchFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	60 V	65A (Tc)	10V	18mOhm @ 20A, 10V	3.5V @ 250µA	75 nC @ 10 V	±20V	6557 pF @ 30 V	-	125W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252
GT1K2P15M MOSFET P-CH 150V 27A 138W TO-263 Goford Semiconductor	780	RFQ	Datasheet	SGT	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	150 V	27A (Tc)	4.5V, 10V	120mOhm @ 15A, 10V	3V @ 250µA	86 nC @ 10 V	±20V	3186 pF @ 75 V	-	138W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263

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