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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
G120P06M MOSFET P-CH 60V 120A 277W 8.5M(M Goford Semiconductor	800	RFQ	-	Trench	-	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	60 V	120A (Tc)	10V	8.5mOhm @ 20A, 10V	3V @ 250µA	230 nC @ 10 V	20V	12215 pF @ 30 V	-	277W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	-
G900P15M MOSFET P-CH 150V 35A TO263 Goford Semiconductor	444	RFQ	Datasheet	TrenchFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	150 V	35A (Tc)	10V	80mOhm @ -5A, -10V	4V @ 250µA	27 nC @ 10 V	±20V	4056 pF @ 75 V	-	198W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263
GC11N65K N650V,RD(MAX)<360M@10V,VTH2.5V~4 Goford Semiconductor	2,212	RFQ	Datasheet	SuperJunction	TO-252-3, DPAK (2 Leads + Tab), SC-63	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	650 V	11A (Tc)	10V	360mOhm @ 5.5A, 10V	4V @ 250µA	21 nC @ 10 V	±30V	901 pF @ 50 V	-	179W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252
GT065P06M MOSFET P-CH 60V 103A 178W 9M(MAX Goford Semiconductor	780	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	60 V	103A (Tc)	4.5V, 10V	8mOhm @ 20A, 10V	2.5V @ 250µA	62 nC @ 10 V	±20V	5985 pF @ 30 V	-	178W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263
GT100N12M N120V,RD(MAX)<10M@10V,VTH2.5V~3. Goford Semiconductor	708	RFQ	Datasheet	SGT	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	120 V	70A (Tc)	10V	10mOhm @ 35A, 10V	4V @ 250µA	50 nC @ 10 V	±20V	3050 pF @ 60 V	-	100W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263
GC11N65D5 N650V, 11A,RD<360M@10V,VTH2.5V~4 Goford Semiconductor	4,942	RFQ	Datasheet	SuperJunction	8-PowerTDFN	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	650 V	11A (Tc)	10V	360mOhm @ 5.5A, 10V	4V @ 250µA	21 nC @ 10 V	±30V	901 pF @ 50 V	-	78W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-DFN (4.9x5.75)
GT025N06AM N60V,170A,RD<2.5M@10V,VTH1.2V~2. Goford Semiconductor	776	RFQ	Datasheet	SGT	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	170A (Tc)	4.5V, 10V	2.5mOhm @ 20A, 10V	2.5V @ 250µA	70 nC @ 10 V	±20V	5119 pF @ 30 V	-	215W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263
GT011N03ME MOSFET N-CH ESD 30V A TO-263 Goford Semiconductor	789	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	30 V	209A (Tc)	4.5V, 10V	1.6mOhm @ 10A, 10V	2.5V @ 250µA	98 nC @ 10 V	±18V	6140 pF @ 15 V	-	89W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263
GC11N65M N650V,RD(MAX)<360M@10V,VTH2.5V~4 Goford Semiconductor	775	RFQ	Datasheet	SuperJunction	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	650 V	11A (Tc)	10V	360mOhm @ 5.5A, 10V	4V @ 250µA	21 nC @ 10 V	±30V	768 pF @ 50 V	-	78W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263
GT025N06AD5 N60V, 170A, RD<2.2M@10V,VTH1.2V~ Goford Semiconductor	4,141	RFQ	Datasheet	SGT	8-PowerTDFN	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	170A (Tc)	4.5V, 10V	2.2mOhm @ 20A, 10V	2.5V @ 250µA	81 nC @ 10 V	±20V	5044 pF @ 30 V	-	215W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-DFN (4.9x5.75)

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