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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
GC11N65F N650V,RD(MAX)<360M@10V,VTH2.5V~4 Goford Semiconductor	133	RFQ	Datasheet	SuperJunction	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	11A (Tc)	10V	360mOhm @ 5.5A, 10V	4V @ 250µA	21 nC @ 10 V	±30V	901 pF @ 50 V	-	38.5W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220F
G110N06K N60V,RD(MAX)<6.4M@10V,RD(MAX)<8. Goford Semiconductor	12,202	RFQ	Datasheet	TrenchFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	110A (Tc)	4.5V, 10V	6.4mOhm @ 4A, 10V	2.5V @ 250µA	113 nC @ 10 V	±20V	5538 pF @ 25 V	-	160W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252
G075N06MI N60V, 110A,RD<7M@10V,VTH1.0V~4.0 Goford Semiconductor	747	RFQ	Datasheet	TrenchFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	110A (Tc)	10V	7mOhm @ 20A, 10V	4V @ 250µA	90 nC @ 10 V	±20V	6443 pF @ 30 V	-	160W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263
G75P04M MOSFET P-CH 40V 80A TO-263 Goford Semiconductor	625	RFQ	Datasheet	TrenchFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	40 V	80A (Tc)	4.5V, 10V	6.5mOhm @ -30A, -10V	2.5V @ 250µA	106 nC @ 10 V	±20V	6516 pF @ 20 V	-	115W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263
GT52N10T N100V,RD(MAX)<9M@10V,RD(MAX)<15M Goford Semiconductor	138	RFQ	Datasheet	SGT	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	70A (Tc)	4.5V, 10V	9mOhm @ 50A, 10V	3V @ 250µA	35 nC @ 10 V	±20V	2273 pF @ 50 V	-	100W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220F
GT065P06T P-60V,-82A,RD(MAX)<7.5M@-10V,VTH Goford Semiconductor	212	RFQ	Datasheet	SGT	TO-220-3	Tube	Active	P-Channel	MOSFET (Metal Oxide)	60 V	82A (Tc)	4.5V, 10V	8mOhm @ 20A, 10V	2.5V @ 250µA	62 nC @ 10 V	±20V	5335 pF @ 30 V	-	150W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220
GT400P10M MOSFET P-CH 100V 35A TO-263 Goford Semiconductor	783	RFQ	Datasheet	SGT	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	100 V	35A (Tc)	4.5V, 10V	35mOhm @ 10A, 10V	2.5V @ 250µA	41 nC @ 10 V	±20V	3073 pF @ 50 V	-	106W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263
GT1K2P15D5 MOSFET P-CH 150V 27A 130W 110M(M Goford Semiconductor	3,304	RFQ	-	SGT	8-PowerTDFN	Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	150 V	27A (Tc)	10V, 4.5V	110mOhm @ 15A, 10V	3V @ 250µA	80 nC @ 10 V	20V	3213 pF @ 75 V	-	138W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-DFN (4.9x5.75)
G900P15K P-150V,-50A,RD(MAX)<80M@-10V,VTH Goford Semiconductor	820	RFQ	Datasheet	TrenchFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	150 V	35A (Tc)	10V	80mOhm @ 5A, 10V	4V @ 250µA	27 nC @ 4.5 V	±20V	3918 pF @ 75 V	-	198W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252
G080N10T MOSFET N-CH 100V 180A TO-220 Goford Semiconductor	114	RFQ	Datasheet	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	180A (Tc)	4.5V, 10V	7.5mOhm @ 30A, 10V	2.5V @ 250µA	107 nC @ 4.5 V	±20V	13912 pF @ 50 V	-	370W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220

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