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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
GT025N06D5 N60V,RD(MAX)<2.7M@10V,RD(MAX)<3. Goford Semiconductor	7,056	RFQ	Datasheet	SGT	8-PowerTDFN	Cut Tape (CT)	Obsolete	N-Channel	MOSFET (Metal Oxide)	60 V	170A (Tc)	4.5V, 10V	2.5mOhm @ 20A, 10V	2.5V @ 250µA	81 nC @ 10 V	±20V	5125 pF @ 30 V	-	125W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-DFN (4.9x5.75)
GT045N10M N100V, 120A,RD<4.5M@10V,VTH2V~4V Goford Semiconductor	609	RFQ	Datasheet	SGT	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	100 V	120A (Tc)	10V	4.5mOhm @ 30A, 10V	4V @ 250µA	60 nC @ 10 V	±20V	4198 pF @ 50 V	-	180W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263
GT045N10D5 MOSFET N-CH 100V 120A DFN5*6-8L Goford Semiconductor	4,517	RFQ	Datasheet	-	8-PowerTDFN	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	100 V	120A (Tc)	10V	5mOhm @ 30A, 10V	4V @ 250µA	60 nC @ 10 V	±20V	4217 pF @ 50 V	-	180W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-DFN (4.9x5.75)
G030N06M MOSFET N-CH 60V 223A TO-263 Goford Semiconductor	770	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	223A (Tc)	4.5V, 10V	3mOhm @ 30A, 10V	2.5V @ 250µA	101 nC @ 4.5 V	±20V	12432 pF @ 30 V	-	240W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263
G080P06M P-60V,-195A,RD(MAX)<7.5M@-10V,VT Goford Semiconductor	699	RFQ	Datasheet	TrenchFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	60 V	195A (Tc)	10V	7.5mOhm @ 20A, 10V	4V @ 250µA	186 nC @ 10 V	±20V	15870 pF @ 30 V	-	294W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263
G080N10M MOSFET N-CH 100V 180A TO-263 Goford Semiconductor	867	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	100 V	180A (Tc)	4.5V, 10V	7.5mOhm @ 30A, 10V	2.5V @ 250µA	107 nC @ 4.5 V	±20V	13950 pF @ 50 V	-	370W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263
G040P04M MOSFET P-CH 40V 222A TO-263 Goford Semiconductor	448	RFQ	Datasheet	TrenchFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	40 V	180A (Tc)	4.5V, 10V	3.5mOhm @ -15A,- 10V	2.5V @ 250µA	206 nC @ 10 V	±20V	14983 pF @ 20 V	-	178W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263
GT011N03TLE MOSFET N-CH 30V 250A 300W 1.2M( Goford Semiconductor	1,990	RFQ	Datasheet	-	8-PowerSFN	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	30 V	250A (Tc)	4.5V, 10V	1.2mOhm @ 10A, 10V	2.5V @ 250µA	98 nC @ 10 V	±18V	6278 pF @ 15 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TOLL-8L
GT025N06AM6 N60V,170A,RD<2.0M@10V,VTH1.2V~2. Goford Semiconductor	500	RFQ	Datasheet	-	TO-263-7, D2PAK (6 Leads + Tab)	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	170A (Tc)	4.5V, 10V	2mOhm @ 20A, 10V	2.5V @ 250µA	70 nC @ 10 V	±20V	5058 pF @ 30 V	-	215W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263-6
GC20N65M MOSFET N-CH 650V 20A 151W 180M( Goford Semiconductor	788	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	650 V	20A (Tc)	10V	180mOhm @ 10A, 10V	5V @ 250µA	28 nC @ 10 V	±30V	1680 pF @ 400 V	-	151W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263

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