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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
1002 N100V,RD(MAX)<250M@10V,RD(MAX)<2 Goford Semiconductor	2,710	RFQ	Datasheet	-	TO-236-3, SC-59, SOT-23-3	Cut Tape (CT)	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	2A	-	250mOhm @ 2A, 10V	3V @ 250µA	10 nC @ 10 V	±20V	387 pF @ 10 V	-	1.3W	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23
3415A P20V,RD(MAX)<45M@-4.5V,RD(MAX)<6 Goford Semiconductor	6,251	RFQ	Datasheet	TrenchFET®	TO-236-3, SC-59, SOT-23-3	Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	20 V	4A (Tc)	2.5V, 4.5V	45mOhm @ 4A, 4.5V	1.1V @ 250µA	12 nC @ 4.5 V	±10V	950 pF @ 10 V	-	1.4W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3
G1K1P06LL P-60V,-4A,RD(MAX)<110M@-10V,VTH- Goford Semiconductor	1,656	RFQ	Datasheet	TrenchFET®	SOT-23-6	Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	60 V	3A (Tc)	4.5V, 10V	110mOhm @ 2A, 10V	2.5V @ 250µA	25 nC @ 10 V	±20V	1035 pF @ 30 V	-	1.5W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-6L
G1K3N10LL MOSFET N-CH 100V 3.4A SOT-23-6L Goford Semiconductor	1,620	RFQ	Datasheet	TrenchFET®	SOT-23-6	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	100 V	3.4A (Tc)	4.5V, 10V	130mOhm @ 1A, 10V	2.5V @ 250µA	22 nC @ 10 V	±20V	808 pF @ 50 V	-	2.28W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-6L
G65P06F MOSFET P-CH 60V 65A TO-220F Goford Semiconductor	10,000	RFQ	Datasheet	TrenchFET®	TO-220-3 Full Pack	Tube	Active	P-Channel	MOSFET (Metal Oxide)	-	65A (Tc)	10V	18mOhm @ 20A, 10V	3.5V @ 250µA	-	±20V	-	-	39W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220F
G6N02L MOSFET N-CH 20V 6A SOT-23-3L Goford Semiconductor	3,379	RFQ	Datasheet	TrenchFET®	TO-236-3, SC-59, SOT-23-3	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	20 V	6A (Tc)	2.5V, 4.5V	11.3mOhm @ 3A, 4.5V	900mV @ 250µA	12.5 nC @ 10 V	±12V	1151 pF @ 15 V	-	1W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3
GT1003A N100V, 3A,RD<140M@10V,VTH1.0V~3. Goford Semiconductor	1,947	RFQ	Datasheet	SGT	TO-236-3, SC-59, SOT-23-3	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	100 V	3A (Tc)	10V	80mOhm @ 3A, 10V	2.5V @ 250µA	5 nC @ 10 V	±20V	209 pF @ 50 V	-	1.7W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3
G300N04D3 MOSFET N-CH 40V 6A DFN3*3-8L Goford Semiconductor	4,990	RFQ	Datasheet	TrenchFET®	8-PowerVDFN	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	40 V	6A (Tc)	4.5V, 10V	30mOhm @ 3A, 10V	2.5V @ 250µA	10 nC @ 10 V	±20V	479 pF @ 20 V	-	1.25W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-DFN (3.15x3.05)
5P40 P40V,RD(MAX)<85M@-10V,RD(MAX)<12 Goford Semiconductor	9,210	RFQ	Datasheet	TrenchFET®	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	40 V	5A (Tc)	4.5V, 10V	85mOhm @ 5A, 10V	3V @ 250µA	14 nC @ 10 V	±20V	600 pF @ 20 V	-	2W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3
GT013N04D5 N40V,195A,RD<1.7M@10V,VTH2.0V~4. Goford Semiconductor	5,000	RFQ	Datasheet	-	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	40 V	195A (Tc)	10V	1.7mOhm @ 30A, 10V	4V @ 250µA	50 nC @ 10 V	±20V	3927 pF @ 20 V	-	78W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-DFN (4.9x5.75)

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