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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
3400L N30V,RD(MAX)<27M@10V,RD(MAX)<33M Goford Semiconductor	3,785	RFQ	Datasheet	TrenchFET®	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	30 V	5.6A (Tc)	4.5V, 10V	27mOhm @ 2.8A, 10V	1.4V @ 250µA	9.5 nC @ 4.5 V	±12V	820 pF @ 15 V	-	1.4W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3
G66 P-16V,-5.8A,RD(MAX)<45M@-4.5V,VT Goford Semiconductor	3,000	RFQ	Datasheet	TrenchFET®	6-WDFN Exposed Pad	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	16 V	5.8A (Tc)	2.5V, 4.5V	45mOhm @ 4.1A, 4.5V	1V @ 250µA	7.8 nC @ 4.5 V	±12V	740 pF @ 4 V	-	1.7W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	6-DFN (2x2)
G3401L P30V,RD(MAX)<60M@-10V,RD(MAX)<70 Goford Semiconductor	2,103	RFQ	Datasheet	TrenchFET®	TO-236-3, SC-59, SOT-23-3	Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	30 V	4.4A (Tc)	2.5V, 4.5V, 10V	55mOhm @ 4A, 10V	1.3V @ 250µA	9.3 nC @ 4.5 V	±12V	652 pF @ 15 V	-	1.3W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3
03N06L N60V,RD(MAX)<100M@10V,RD(MAX)<12 Goford Semiconductor	6,330	RFQ	Datasheet	TrenchFET®	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	3A (Tc)	4.5V, 10V	80mOhm @ 2A, 10V	1.2V @ 250µA	14.6 nC @ 10 V	±20V	458 pF @ 30 V	-	1.7W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3
G1002L N100V,RD(MAX)<250M@10V,VTH1.2V~2 Goford Semiconductor	2,934	RFQ	Datasheet	TrenchFET®	TO-236-3, SC-59, SOT-23-3	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	100 V	2A (Tc)	4.5V, 10V	250mOhm @ 2A, 10V	2V @ 250µA	10 nC @ 10 V	±20V	413 pF @ 50 V	-	1.3W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3
G2K3N10H MOSFET, N-CH,100V, 2A,SOT-223 Goford Semiconductor	1,585	RFQ	Datasheet	TrenchFET®	TO-261-4, TO-261AA	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	100 V	2A (Tc)	4.5V, 10V	220mOhm @ 2A, 10V	2V @ 250µA	13 nC @ 10 V	±20V	434 pF @ 50 V	-	2.4W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-223
G700P06LL MOSFET, P-CH,-60V,-5A,RD(MAX)<75 Goford Semiconductor	2,619	RFQ	Datasheet	TrenchFET®	SOT-23-6	Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	60 V	5A (Tc)	4.5V, 10V	75mOhm @ 3.2A, 10V	3V @ 250µA	15.8 nC @ 10 V	±20V	1456 pF @ 30 V	-	3.1W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-6L
G220P02D2 P-20V,-8A,RD(MAX)<25M@-4.5V,VTH- Goford Semiconductor	2,965	RFQ	Datasheet	TrenchFET®	6-UDFN Exposed Pad	Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	20 V	8A (Tc)	4.5V, 10V	20mOhm @ 6A, 10V	1.2V @ 250µA	14 nC @ 10 V	±12V	1873 pF @ 10 V	-	3.5W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	6-DFN (2x2)
G7K2N20LLE N-PH,200V, ESD,2A,RD<0.7@10V,VTH Goford Semiconductor	2,648	RFQ	Datasheet	TrenchFET®	SOT-23-6	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	200 V	2A (Tc)	4.5V, 10V	700mOhm @ 1A, 10V	2.5V @ 250µA	11 nC @ 10 V	±20V	531 pF @ 100 V	-	1.8W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-6L
G20N03D2 N30V,RD(MAX)<24M@10V,RD(MAX)<29M Goford Semiconductor	2,413	RFQ	Datasheet	TrenchFET®	6-WDFN Exposed Pad	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	30 V	9A (Tc)	4.5V, 10V	15mOhm @ 5A, 10V	2V @ 250µA	20 nC @ 10 V	±20V	860 pF @ 30 V	-	1.5W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	6-DFN (2x2)

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