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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
IGLR60R260D1E8238XUMA1 GAN HV Infineon Technologies	9,802	RFQ	-	CoolGaN™	8-PowerTDFN	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	GaNFET (Gallium Nitride)	600 V	10.4A (Tc)	-	-	1.6V @ 690µA	-	-10V	110 pF @ 400 V	-	52W (Tc)	-40°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TSON-8-7
IGLR60R190D1E8238XUMA1 GAN HV Infineon Technologies	7,361	RFQ	-	CoolGaN™	8-PowerTDFN	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	GaNFET (Gallium Nitride)	600 V	12.8A (Tc)	-	-	1.6V @ 960µA	-	-10V	157 pF @ 400 V	-	55.5W (Tc)	-40°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TSON-8-6
IGOT60R070D1E8237AUMA1 GAN HV Infineon Technologies	5,399	RFQ	-	CoolGaN™	20-PowerSOIC (0.433", 11.00mm Width)	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	GaNFET (Gallium Nitride)	600 V	31A (Tc)	-	-	1.6V @ 2.6mA	-	-10V	380 pF @ 400 V	-	125W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-DSO-20-87
IRF7726TRPBFXTMA1 MOSFET P-CH 30V 7A MICRO8 Infineon Technologies	7,277	RFQ	-	HEXFET®	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Tape & Reel (TR)	Discontinued at Digi-Key	P-Channel	MOSFET (Metal Oxide)	30 V	7A (Ta)	4.5V, 10V	26mOhm @ 7A, 10V	2.5V @ 250µA	69 nC @ 10 V	±20V	2204 pF @ 25 V	-	1.79W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	Micro8™
IPD90P04P405AUMA2 MOSFET P-CH 40V 90A TO252-3 Infineon Technologies	5,403	RFQ	-	OptiMOS™ P2	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	40 V	90A (Tc)	10V	4.7mOhm @ 90A, 10V	4V @ 250µA	154 nC @ 10 V	±20V	10300 pF @ 25 V	-	125W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO252-3-313
IPD50P04P4L11AUMA1 MOSFET Infineon Technologies	3,526	RFQ	-	OptiMOS™ P2	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Obsolete	P-Channel	MOSFET (Metal Oxide)	40 V	50A (Tc)	4.5V, 10V	10.6mOhm @ 50A, 10V	2.2V @ 85µA	59 nC @ 10 V	+5V, -16V	3900 pF @ 25 V	-	58W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO252-3-313
IPB180P04P4L02AUMA2 MOSFET Infineon Technologies	7,423	RFQ	-	OptiMOS™ P2	TO-263-7, D2PAK (6 Leads + Tab)	Bulk	Obsolete	P-Channel	MOSFET (Metal Oxide)	40 V	180A (Tc)	4.5V, 10V	2.4mOhm @ 100A, 10V	2.2V @ 410µA	286 nC @ 10 V	+5V, -16V	18700 pF @ 25 V	-	150W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-7-3
IPD70P04P4L08AUMA2 MOSFET Infineon Technologies	8,537	RFQ	-	OptiMOS™ P2	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Obsolete	P-Channel	MOSFET (Metal Oxide)	40 V	70A (Tc)	4.5V, 10V	7.8mOhm @ 70A, 10V	2.2V @ 120µA	92 nC @ 10 V	+5V, -16V	5430 pF @ 25 V	-	75W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO252-3-313
IPD50P04P413AUMA2 MOSFET Infineon Technologies	2,415	RFQ	-	OptiMOS™ P2	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Obsolete	P-Channel	MOSFET (Metal Oxide)	40 V	50A (Tc)	10V	12.6mOhm @ 50A, 10V	4V @ 85µA	51 nC @ 10 V	±20V	3670 pF @ 25 V	-	58W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO252-3-313
SISC262SN06LX6SA1 MOSFET Infineon Technologies	9,641	RFQ	-	-	-	Bulk	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-

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