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FETs, MOSFETs
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BSF134N10NJ3GXUMA2MOSFET N-CH 100V 9A/40A 2WDSON Infineon Technologies |
3,453 | 0.00 |
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- |
OptiMOS™ | DirectFET™ Isometric ST | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 9A (Ta), 40A (Tc) | 6V, 10V | 13.4mOhm @ 30A, 10V | 3.5V @ 40µA | 30 nC @ 10 V | ±20V | 2300 pF @ 50 V | - | 2.2W (Ta), 43W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | MG-WDSON-2 |
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IGLT65R055D2GAN TRANSISTOR 650 V G5 Infineon Technologies Canada Inc. |
6,023 | 0.00 |
|
- |
CoolGaN™ | 16-PowerSOP Module | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 31A (Tc) | - | - | 1.6V @ 2.6mA | 6.6 nC @ 3 V | -10V | 330 pF @ 400 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-16-8 |
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IGLT65R045D2GAN TRANSISTOR 650 V G5 Infineon Technologies Canada Inc. |
4,276 | 0.00 |
|
- |
CoolGaN™ | 16-PowerSOP Module | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 38A (Tc) | - | - | 1.6V @ 3.3mA | 8.4 nC @ 3 V | -10V | 420 pF @ 400 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-16-8 |
