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FETs, MOSFETs
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
APT12080LVRGMOSFET N-CH 1200V 16A TO264 |
5,789 | 0.00 |
|
- |
POWER MOS V® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 16A (Tc) | 10V | 800mOhm @ 8A, 10V | 4V @ 2.5mA | 485 nC @ 10 V | ±30V | 7800 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 (L) |
|
SCT30N120HSICFET N-CH 1200V 40A H2PAK-2 |
6,036 | 0.00 |
|
Datasheet |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 40A (Tc) | 20V | 100mOhm @ 20A, 20V | 3.5V @ 1mA | 105 nC @ 20 V | +25V, -10V | 1700 pF @ 400 V | - | 270W (Tc) | -55°C ~ 200°C (TJ) | - | - | Surface Mount | H2PAK-2 |
|
STE110NS20FDMOSFET N-CH 200V 110A ISOTOP |
2,812 | 0.00 |
|
Datasheet |
MESH OVERLAY™ | ISOTOP | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 110A (Tc) | 10V | 24mOhm @ 50A, 10V | 4V @ 250µA | 504 nC @ 10 V | ±20V | 7900 pF @ 25 V | - | 500W (Tc) | 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
|
IXFN120N60X3DISCRETE MOSFET 120A 600V X3 SOT |
9,951 | 0.00 |
|
- |
- | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
APT56F60B2MOSFET N-CH 600V 60A T-MAX |
7,323 | 0.00 |
|
Datasheet |
POWER MOS 8™ | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 60A (Tc) | 10V | 110mOhm @ 28A, 10V | 5V @ 2.5mA | 280 nC @ 10 V | ±30V | 11300 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | T-MAX™ [B2] |
|
|
GS66516T-TRGS66516T-TR |
4,762 | 0.00 |
|
- |
- | 4-SMD, No Lead | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 60A (Tc) | 6V | 32mOhm @ 18A, 6V | 1.3V @ 14mA | 12.1 nC @ 6 V | +7V, -10V | 520 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | - |
|
IXFN340N06MOSFET N-CH 60V 340A SOT-227B |
7,843 | 0.00 |
|
Datasheet |
HiPerFET™ | SOT-227-4, miniBLOC | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 60 V | 340A (Tc) | 10V | 3mOhm @ 100A, 10V | 4V @ 8mA | 600 nC @ 10 V | ±20V | 16800 pF @ 25 V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
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|
IXFR26N100PMOSFET N-CH 1000V 15A ISOPLUS247 |
6,926 | 0.00 |
|
Datasheet |
HiPerFET™, Polar | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 15A (Tc) | 10V | 430mOhm @ 13A, 10V | 6.5V @ 1mA | 197 nC @ 10 V | ±30V | 11900 pF @ 25 V | - | 290W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ISOPLUS247™ |
|
|
APT10050LVFRGMOSFET N-CH 1000V 21A TO264 |
9,103 | 0.00 |
|
Datasheet |
POWER MOS V® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 21A (Tc) | - | 500mOhm @ 500mA, 10V | 4V @ 2.5mA | 500 nC @ 10 V | - | 7900 pF @ 25 V | - | - | - | - | - | Through Hole | TO-264 [L] |
|
|
APT10050B2VFRGMOSFET N-CH 1000V 21A T-MAX |
6,737 | 0.00 |
|
Datasheet |
POWER MOS V® | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 21A (Tc) | - | 500mOhm @ 500mA, 10V | 4V @ 2.5mA | 500 nC @ 10 V | - | 7900 pF @ 25 V | - | - | - | - | - | Through Hole | T-MAX™ [B2] |
|
|
IXFN72N55Q2MOSFET N-CH 550V 72A SOT-227B |
4,377 | 0.00 |
|
- |
HiPerFET™, Q2 Class | SOT-227-4, miniBLOC | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 550 V | 72A (Tc) | 10V | 72mOhm @ 500mA, 10V | 5V @ 8mA | 258 nC @ 10 V | ±30V | 10500 pF @ 25 V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
|
|
IXFE180N20MOSFET N-CH 200V 158A SOT227B |
7,673 | 0.00 |
|
- |
HiPerFET™ | SOT-227-4, miniBLOC | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 158A (Tc) | 10V | 12mOhm @ 500mA, 10V | 4V @ 8mA | 380 nC @ 10 V | ±20V | 14400 pF @ 25 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
|
|
IXTN79N20MOSFET N-CH 200V 85A SOT227B |
7,235 | 0.00 |
|
- |
- | SOT-227-4, miniBLOC | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 85A (Tc) | - | - | 4V @ 20mA | - | - | - | - | 400W (Tc) | - | - | - | Chassis Mount | SOT-227B |
|
|
UF4C120053B7SSB1200V/53MO,SICFET,G4,TO263-7 |
3,156 | 0.00 |
|
Datasheet |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Bulk | Active | P-Channel | SiCFET (Silicon Carbide) | 1200 V | 34A (Tj) | 12V | 67mOhm @ 20A, 12V | 6V @ 10mA | 37.8 nC @ 15 V | ±20V | 1370 pF @ 800 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK-7L |
|
|
UF4SC120030B7SSB1200V/30MO,SICFET,G4,TO263-7 |
8,077 | 0.00 |
|
Datasheet |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Bulk | Active | P-Channel | SiCFET (Silicon Carbide) | 1200 V | 56A (Tj) | 12V | 39mOhm @ 20A, 12V | 6V @ 10mA | 37.8 nC @ 15 V | ±20V | 1450 pF @ 800 V | - | 341W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK-7L |
|
APT40M70JVFRMOSFET N-CH 400V 53A ISOTOP |
4,917 | 0.00 |
|
Datasheet |
POWER MOS V® | SOT-227-4, miniBLOC | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 400 V | 53A (Tc) | 10V | 70mOhm @ 26.5A, 10V | 4V @ 2.5mA | 495 nC @ 10 V | ±30V | 8890 pF @ 25 V | - | 450W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
|
APT10043JVRMOSFET N-CH 1000V 22A ISOTOP |
6,352 | 0.00 |
|
Datasheet |
- | SOT-227-4, miniBLOC | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1000 V | 22A (Tj) | - | 430mOhm @ 500mA, 10V | 4V @ 1mA | 480 nC @ 10 V | - | 9000 pF @ 25 V | - | - | - | - | - | Chassis Mount | ISOTOP® |
|
|
APT31N80JC3MOSFET N-CH 800V 31A ISOTOP |
7,013 | 0.00 |
|
Datasheet |
CoolMOS™ | SOT-227-4, miniBLOC | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 31A (Tc) | 10V | 145mOhm @ 22A, 10V | 3.9V @ 2mA | 355 nC @ 10 V | ±20V | 4510 pF @ 25 V | - | 833W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
|
|
APT6011B2VRGMOSFET N-CH 600V 49A T-MAX |
6,008 | 0.00 |
|
Datasheet |
POWER MOS V® | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 49A (Tc) | - | 110mOhm @ 24.5A, 10V | 4V @ 2.5mA | 450 nC @ 10 V | - | 8900 pF @ 25 V | - | - | - | - | - | Through Hole | T-MAX™ [B2] |
|
|
IXFL44N80MOSFET N-CH 800V 44A ISOPLUS264 |
7,001 | 0.00 |
|
- |
HiPerFET™ | TO-264-3, TO-264AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 44A (Tc) | 10V | 165mOhm @ 22A, 10V | 4V @ 8mA | 380 nC @ 10 V | ±20V | 10000 pF @ 25 V | - | 550W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ISOPLUS264™ |
