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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STE110NS20FD

Name: STE110NS20FD
Brand: STMicroelectronics
SKU: STE110NS20FD
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STE110NS20FD

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: ISOTOP

Datasheet:: STE110NS20FD.pdf

Description:: MOSFET N-CH 200V 110A ISOTOP

Quantity:: RFQ Add To RFQ list

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Inventory:2,812

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Product details

Overview

STE110NS20FD from STMicroelectronics is an N-channel enhancement-mode power MOSFET in ISOTOP package, rated for 200 V drain-source voltage, 0.022 Ω R_DS(on) at V_GS = 10 V and I_D = 50 A, 110 A continuous drain current at T_C = 25°C, and 100% avalanche tested for ruggedness in hard-switching industrial inverters and UPS systems.

For engineers reviewing the STE110NS20FD datasheet, STE110NS20FD pinout, STE110NS20FD application, or STE110NS20FD equivalent, key selection criteria include its 25 V/ns dv/dt capability, low 360 nC total gate charge, fast 225 ns diode reverse recovery time, and ISOTOP thermal performance with 0.25 °C/W R_thj-case.

Technical Context

This MOSFET employs ST's proprietary MESH OVERLAY™ high-voltage process and STrip layout, delivering lowest R_DS(on) per die area among 200 V devices in its class. Its edge termination structure enables exceptional unclamped inductive switching robustness and 750 mJ single-pulse avalanche energy rating at T_j = 25°C.

The integrated fast body-drain diode features low trr (225 ns), Qrr (1.35 µC), and V_SD = 1.6 V at I_SD = 100 A, enabling efficient synchronous rectification and freewheeling in high-frequency DC-DC converters and motor drives without external diode supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - supports 170 V AC line-derived bus voltages with 15% margin for surge handling
R_DS(on)	0.022 Ω - enables <1.2 W conduction loss at 70 A, critical for thermally constrained industrial modules
I_D (cont.)	110 A @ T_C = 25°C - delivers high peak power density in forced-air-cooled inverters
Q_g	360 nC - reduces gate driver power demand and enables use of cost-effective 1–2 A drivers
trr	225 ns - minimizes commutation losses and EMI in 20–50 kHz PWM motor control stages
E_AS	750 mJ - sustains repetitive unclamped inductive switching events in relay/snubberless designs
dv/dt	25 V/ns - prevents spurious turn-on in high-di/dt half-bridge configurations

Pinout & Package

ISOTOP package: isolated metal tab (drain) with three solderable terminals - Gate, Source, Drain - optimized for high-current, high-voltage discrete mounting on heatsinks with creepage >8 mm.

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control electrode	Receives 10 V logic-level drive; ±20 V absolute max rating allows robust gate protection design
Source (S)	Reference node for gate drive and current sensing	Low-inductance Kelvin connection possible; ties to power ground or floating reference in high-side configuration
Drain (D)	Main current path output	Internally connected to isolated metal tab; requires direct thermal interface to heatsink for 0.25 °C/W junction-to-case path

Key Features

Feature	Design Value
100% avalanche tested	Guarantees minimum 750 mJ E_AS per unit, eliminating need for derating in inductive load applications
Low intrinsic capacitance	C_iss = 7900 pF, C_oss = 1500 pF - reduces switching losses and improves efficiency above 20 kHz
Fast body-drain diode	trr = 225 ns, Qrr = 1.35 µC - enables zero-voltage switching (ZVS) soft-start in resonant topologies
±20 V gate rating	Supports gate driver ICs with rail-to-rail output (e.g., IR2110, UCC27531) without external clamping

Applications

Industrial Motor Drives

Uninterruptible Power Supplies (UPS)

Use Scenario: Three-phase IGBT/MOSFET inverter stage driving 5–15 kW AC induction motors with field-oriented control.

IC Role / Device Role / Timing Role: High-side/low-side switching element in 6-pack topology; handles 110 A peak phase current at 16 kHz PWM.

Use Value: Low R_DS(on) and fast trr reduce conduction + switching losses by ~18% vs. legacy 200 V MOSFETs, improving thermal margin at full load.

Use Scenario: DC-AC inverter stage converting 380 V DC bus to 230 V AC output in online double-conversion UPS.

IC Role / Device Role / Timing Role: Output bridge switch operating in hard-switched full-bridge mode with 50 kHz carrier frequency.

Use Value: 25 V/ns dv/dt immunity prevents false triggering during bus transients, ensuring clean zero-crossing waveform integrity.

Solar Inverters

Welding Equipment

Use Scenario: DC link switching in string-level MPPT boost converters feeding central inverters up to 50 kW.

IC Role / Device Role / Timing Role: High-efficiency synchronous rectifier in interleaved boost stage; conducts 100 A average current.

Use Value: Integrated low-V_SD (1.6 V) body diode eliminates need for external Schottky, reducing BOM count and PCB area.

Use Scenario: Primary-side switching in IGBT-gated inverter-based arc welding power supplies with 400 A output capability.

IC Role / Device Role / Timing Role: Snubberless main switch subjected to repeated unclamped inductive turn-off stress during arc ignition.

Use Value: 750 mJ E_AS rating ensures reliable operation without external RCD snubbers, lowering system cost and failure points.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 200 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXTH110N20L	R_DS(on) = 0.024 Ω (typ), Q_g = 320 nC, trr = 280 ns	Higher diode recovery time increases switching loss in high-frequency ZVS designs	Preferred where lower gate charge reduces driver complexity, but less suitable for <25 kHz ultra-fast recovery needs
IRFP4668PBF	R_DS(on) = 0.023 Ω (max), Q_g = 370 nC, no avalanche rating specified	Lacks guaranteed E_AS spec - requires external clamping in inductive loads	Lower-cost option for non-avalanche-critical applications; not recommended for snubberless motor drives

Compared with IXTH110N20L and IRFP4668PBF, STE110NS20FD uniquely combines certified avalanche ruggedness, fastest trr in its class, and industry-leading dv/dt immunity - making it optimal for snubberless industrial inverters demanding reliability under transient stress.

Availability

STE110NS20FD is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, solar inverters, and welding equipment requiring stable component supply across extended production lifecycles.

Supply support for STE110NS20FD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs and discrete components for automotive, industrial, and power applications.

This device belongs to ST's MESH OVERLAY™ high-voltage power MOSFET product line, engineered specifically for rugged, high-efficiency switching in industrial motor controls, UPS, and renewable energy systems where avalanche immunity and thermal performance are critical.

FAQ

Is STE110NS20FD still in active production?

No - STE110NS20FD is marked as Obsolete Product(s) in ST's official documentation (Rev 3, May 2006). However, Aetrix Electronics maintains legacy inventory with full traceability and offers engineering support for lifecycle replacement planning and drop-in alternatives validated for thermal and electrical equivalence.

What is the maximum safe operating temperature for continuous operation?

The maximum operating junction temperature is 150°C. For continuous operation at full 110 A drain current, case temperature must be held ≤25°C using a heatsink with ≤0.25°C/W thermal resistance. Derating begins at 4 W/°C above 25°C case temperature, per datasheet Table 2.

Can STE110NS20FD be used in parallel configurations?

Yes - its positive temperature coefficient for R_DS(on) (confirmed in Figure 10) enables stable current sharing. Parallel operation requires matched gate drive impedance, symmetrical PCB layout, and thermal coupling via shared heatsink to ensure balanced conduction and avoid thermal runaway.

Does the ISOTOP package provide electrical isolation between drain and heatsink?

Yes - the ISOTOP package features an electrically isolated metal tab (drain) with 2500 V AC-RMS insulation withstand voltage (V_ISO). This allows direct mounting to grounded heatsinks without insulating pads, simplifying thermal design while maintaining safety isolation in Class I equipment.

STE110NS20FD Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MESH OVERLAY™

Package/Case:: ISOTOP

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 110A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 24mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 504 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7900 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 500W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Chassis Mount

Supplier Device Package:: ISOTOP®

STE110NS20FD FAQ

1.How can I place an order for STE110NS20FD through Aetrix?

Please submit a Request for Quotation (RFQ) for STE110NS20FD on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STE110NS20FD reliable?

The price and inventory of STE110NS20FD are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STE110NS20FD is usually 5 days.

3.What payment methods are accepted for STE110NS20FD?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STE110NS20FD transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STE110NS20FD?

STE110NS20FD orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STE110NS20FD order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STE110NS20FD?

For technical support, including STE110NS20FD datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STE110NS20FD requirements.

6.How does Aetrix verify that STE110NS20FD is sourced from the original manufacturer or authorized distributors?

All STE110NS20FD products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STE110NS20FD meets industry standards.

7.What is the process for return or replacement of STE110NS20FD?

All STE110NS20FD units undergo pre-shipment inspection (PSI). If there is an issue with STE110NS20FD, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STE110NS20FD part is unused and in its original packaging.

Return procedure for STE110NS20FD:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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