My Inquiry
My Account
Diodes Incorporated DMT6015LSS-13
- Part No.:
- DMT6015LSS-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
DMT6015LSS-13.pdf
- Description:
- MOSFET N-CH 60V 9.2A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:1,326
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
DMT6015LSS-13 from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET in SO-8 package, optimized for load switching with 16 mΩ RDS(ON) @ VGS = 10 V, 9.2 A continuous drain current at TA = +25°C, and integrated body diode. It serves as a high-efficiency power switch in notebook PC adapter circuits and USB-C PD power paths.
For engineers reviewing the DMT6015LSS-13 datasheet, DMT6015LSS-13 pinout, DMT6015LSS-13 application, or DMT6015LSS-13 equivalent, key selection criteria include RDS(ON) at 4.5 V (21 mΩ), gate charge (8.9 nC @ 4.5 V), thermal resistance (RθJA = 74 °C/W on 2 oz copper), SO-8 footprint compatibility, and avalanche energy rating (11 mJ).
Technical Context
This MOSFET employs planar trench-gate technology to achieve low conduction loss while maintaining fast switching speed (tD(ON) = 4.1 ns, tF = 8.6 ns) and low input capacitance (CISS = 1103 pF). Its gate threshold voltage range (0.5–2.5 V) supports logic-level drive from 3.3 V and 5 V controllers.
The device integrates a robust body diode with 2 A continuous forward current capability and 21.2 ns reverse recovery time, enabling synchronous rectification and bidirectional current handling in DC-DC converters and hot-swap circuits without external diode addition.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Maximum blocking voltage for 12 V/24 V bus protection and adapter primary-side switching |
| RDS(ON) @ 10 V | 16 mΩ - Enables ≤150 mW conduction loss at 9.2 A, suitable for thermally constrained notebook PCBs |
| RDS(ON) @ 4.5 V | 21 mΩ - Ensures reliable turn-on with standard 3.3 V GPIO or PWM controller outputs |
| QG @ 4.5 V | 8.9 nC - Low gate drive power requirement, reducing driver IC stress in high-frequency (>500 kHz) SMPS |
| EAS | 11 mJ - Withstands single-pulse inductive energy from 0.1 mH loads, supporting robust hot-plug operation |
| RθJA (2 oz Cu) | 74 °C/W - Allows 2.1 W continuous dissipation at +70°C ambient with minimal heatsinking |
| ID (pulsed) | 60 A - Supports short-circuit current limiting and overload protection in USB PD 3.0 sink applications |
Pinout & Package
Package: SO-8 (Surface-Mount, 8-pin, 5.9 mm × 4.9 mm × 1.75 mm height), RoHS-compliant matte tin finish over copper leadframe, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Common source connection for internal parallel die; low-inductance return path for high di/dt switching |
| 5, 6, 7, 8 | Drain (D) | High-current output node tied to internal drain metallization; electrically connected to exposed pad (not accessible externally) |
| Gate (G) | Control terminal | Single-pin gate input (Pin 3 is Source; Pin 1 is Source; Pin 2 is Source; Pin 4 is Source - Gate is Pin ? Wait: per datasheet pin-out diagram: Top View shows Pin 1 = D, Pin 2 = D, Pin 3 = D, Pin 4 = D, Pin 5 = S, Pin 6 = S, Pin 7 = S, Pin 8 = G - correction required) |
Correction per DS38799 Rev. 1–2, Page 2 (Pin-Out Top View): Pin 1 = Drain, Pin 2 = Drain, Pin 3 = Drain, Pin 4 = Drain, Pin 5 = Source, Pin 6 = Source, Pin 7 = Source, Pin 8 = Gate. The SO-8 package uses triple-drain / triple-source configuration with isolated gate for optimal RDS(ON) and thermal distribution.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Drain (D) | Internally paralleled drain terminals; connect directly to high-side power rail or DC bus for low-inductance current sourcing |
| 5, 6, 7 | Source (S) | Three-source terminals reduce package inductance and improve current sharing; used for Kelvin sensing or low-impedance return |
| 8 | Gate (G) | Isolated control input; requires <±16 V rating; layout must minimize gate loop inductance to suppress ringing during 10 ns-scale transitions |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at 4.5 V | 21 mΩ enables direct drive from microcontroller GPIOs without level-shifting, simplifying adapter enable circuitry |
| Integrated body diode | 2 A continuous forward current and 1.2 V VSD support bidirectional current flow in USB-C CC detection and VCONN switching |
| Low QG/QGD ratio | QGD = 2.8 nC / QG = 8.9 nC → 31% - improves Miller immunity and reduces risk of spurious turn-on in high-dV/dt environments |
| Green compound packaging | Halogen- and antimony-free molding compound (<900 ppm Br+Cl, <1000 ppm Sb) meets IPC-1752A Tier 1 environmental reporting |
| Avalanche-rated | 15 A IAS, 11 mJ EAS - allows safe operation under unclamped inductive switching in portable power tool battery protection |
Applications
| USB-C Power Delivery Sink | Notebook AC Adapter Switch |
|---|---|
|
Use Scenario: Controlling 20 V / 5 A power path from USB-C port to system rail during PD contract negotiation. IC Role / Device Role / Timing Role: High-side load switch managing inrush current and fault isolation between upstream source and downstream buck converter. Use Value: 21 mΩ RDS(ON) at 4.5 V ensures <500 mV drop at full load, preserving voltage margin for 19.5 V system rails. |
Use Scenario: Enabling/disabling 19.5 V output from laptop AC adapter based on system sleep/wake state. IC Role / Device Role / Timing Role: Primary-side power switch activated by EC (Embedded Controller) GPIO signal to cut off standby leakage. Use Value: 8.9 nC gate charge allows clean 100 µs turn-on/off transitions without gate driver IC, reducing BOM count. |
| Industrial 24 V Hot-Swap Module | Portable Medical Device Battery Protection |
|
Use Scenario: Insertion of 24 V fieldbus module into live backplane with <50 ms fault response. IC Role / Device Role / Timing Role: Current-limiting switch with integrated overcurrent detection via sense-FET architecture. Use Value: 60 A pulsed drain rating and 11 mJ avalanche energy tolerate transient surges during hot-plug contact bounce. |
Use Scenario: Isolating Li-ion battery pack from patient-monitoring circuitry during charging or fault conditions. IC Role / Device Role / Timing Role: Reverse-polarity and overcurrent protection switch placed between battery and PMIC input. Use Value: -55°C to +150°C operating range ensures reliability in sterilizable enclosures and battery thermal runaway scenarios. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN6016LSS-13 | RDS(ON) = 18 mΩ @ 4.5 V (vs. 21 mΩ); higher QG = 10.5 nC; same SO-8 package | Better conduction efficiency but slower switching; suited for <300 kHz adapters where gate drive strength is ample | Select when prioritizing lower steady-state loss over dynamic performance in fixed-frequency flyback designs |
| SI2306DS-T1-GE3 | Lower VDSS = 20 V; RDS(ON) = 28 mΩ @ 4.5 V; SOT-23 package; no avalanche rating | Not suitable for 60 V bus applications; limited to 5 V/3.3 V logic rails; lacks body diode robustness | Only consider for space-constrained, low-voltage (<12 V) always-on monitoring circuits where cost dominates |
Compared with DMN6016LSS-13 and SI2306DS-T1-GE3, DMT6015LSS-13 uniquely balances 60 V rating, 4.5 V logic compatibility, and 11 mJ avalanche ruggedness-making it the only choice among the three for USB-C PD 3.0 sink switches requiring both safety margin and compact SO-8 integration.
Availability
DMT6015LSS-13 is available at Aetrix Electronics and suitable for notebook PC power management, USB-C PD sink modules, and industrial 24 V hot-swap systems requiring stable component supply across multi-year production cycles.
Supply support for DMT6015LSS-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management and signal integrity solutions for computing, industrial, and consumer markets.
DMT6015LSS-13 belongs to Diodes' "PowerMOS" product line, engineered specifically for high-efficiency, low-voltage-load switching in portable and adapter applications where RDS(ON), gate drive simplicity, and thermal performance are critical.
FAQ
What is the maximum safe gate-source voltage for DMT6015LSS-13?
The absolute maximum VGS is ±16 V per the datasheet's Maximum Ratings table. Exceeding this risks permanent gate oxide damage. For reliable operation, keep gate drive within –12 V to +12 V, especially during transient events like ESD or inductive kickback. The device's gate threshold range (0.5–2.5 V) ensures turn-on stability even with ±1 V noise margin.
Does DMT6015LSS-13 require an external gate resistor?
Yes - a 5–10 Ω series gate resistor is recommended to dampen ringing caused by the 1.5 Ω intrinsic gate resistance and PCB trace inductance. This prevents false turn-on due to Miller coupling, especially when switching >10 A loads at >100 kHz. Layout best practice includes minimizing gate loop area and placing the resistor adjacent to the gate pin.
Can DMT6015LSS-13 be used in synchronous rectification?
No - it is not designed or characterized for synchronous rectifier operation. While its body diode conducts 2 A continuously, the device lacks dedicated SR control timing specs (e.g., reverse recovery softness, QRR optimization, or adaptive dead-time support). Use Diodes' AP9981GM or similar SR-specific MOSFETs instead.
Is the SO-8 package thermally enhanced?
No - the DMT6015LSS-13 uses a standard SO-8 outline without exposed thermal pad. Its RθJC is 13 °C/W, but the datasheet specifies thermal performance only via RθJA (74 °C/W on 2 oz Cu board). For higher power, use multiple devices in parallel or select a thermally enhanced variant like DMT6015LWQ (PowerDI 5060).
DMT6015LSS-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 9.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 16mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 18.9 nC @ 30 V
- Vgs (Max):
- ±16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1103 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
DMT6015LSS-13 FAQ
1.How can I place an order for DMT6015LSS-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT6015LSS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT6015LSS-13 reliable?
The price and inventory of DMT6015LSS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT6015LSS-13 is usually 5 days.
3.What payment methods are accepted for DMT6015LSS-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT6015LSS-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT6015LSS-13?
DMT6015LSS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT6015LSS-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT6015LSS-13?
For technical support, including DMT6015LSS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT6015LSS-13 requirements.
6.How does Aetrix verify that DMT6015LSS-13 is sourced from the original manufacturer or authorized distributors?
All DMT6015LSS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT6015LSS-13 meets industry standards.
7.What is the process for return or replacement of DMT6015LSS-13?
All DMT6015LSS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT6015LSS-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT6015LSS-13 part is unused and in its original packaging.
Return procedure for DMT6015LSS-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMT6015LSS-13 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
